“…Micro- and nanosensors are divided into four categories depending on the transduction mechanism, e.g., amperometric, impedimetric, potentiometric, and transistor-based, to best guide the reader through the different detection strategies and highlight major advancements as well as still unaddressed demands in electrochemical sensing. …”
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“…In this study, we fabricated an electric double-layer transistor (EDLT), a synaptic device, by preparing a casein biopolymer electrolyte solution using an efficient microwave-assisted synthesis to replace the conventional heating (heat stirrer) synthesis. …”
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“…Graphene nanoscroll, because of attractive electronic, mechanical, thermoelectric and optoelectronics properties, is a suitable candidate for transistor and sensor applications. In this research, the electrical transport characteristics of high-performance field effect transistors based on graphene nanoscroll are studied in the framework of analytical modeling. …”
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“…[Image: see text] We successfully demonstrated the improvement and stabilization of the electrical properties of a graphene field effect transistor by fabricating a sandwiched amorphous boron nitride (a-BN)/graphene (Gr)/a-BN using a directly grown a-BN film. …”
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“…It is shown that the system behaves as an optical transistor while the cavity is exposed to a weak input optical signal which can be amplified considerably in the cavity output if the system is in the unresolved sideband regime. …”
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“…  Voltage scaling as a means to maintain a constant power envelope with an increase in transistor  numbers is hitting diminishing returns. …”
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“…Modern Solid State Physics came of age in the late thirties and forties, and had its most extensive expansion with the development of the transistor, integrated circuits, and microelectronics. …”
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“…Future development like the evolutionary shrinking of the minimum feature size as well as revolutionary novel transistor concepts will change the gate level savings gained by adiabatic logic. …”
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“…As explained, applications of Graphene come in classes that range from additives to composite materials to field effect transistor elements capable of extremely high frequency operation. …”
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“…Additionally, it includes a bypass transistor to deactivate a single module if necessary. …”
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“…Along with transistor measurements, these also demonstrate immunity to SEGR and SEL. …”
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“…The results provide a trap-based understanding of the transistor repairing technique, which could provide guidance for the reliable long-term operation of ICs.…”
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“…In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. …”
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“…In this contribution, we present a novel textile chemical sensor exploiting an organic electrochemical transistor (OECT) configuration based on poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) for uric acid (UA)-selective monitoring in wound exudate. …”
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“…Electromechanical actuation of the cantilever modulates sensing events close to the transistor channel, improving signal-transduction efficiency, while the stiff base prevents non-specific adsorption of background molecules present in biofluids. …”
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“…This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based transmit/receive module (TRM), each of which achieves an insertion loss of 1.21 dB and 0.66 dB at 9 GHz, IP(1dB) higher than 46.3 dBm and 44.7 dBm, respectively. …”
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“…Long-range magnetic ordering of two-dimensional crystals can be sensitive to interlayer coupling, enabling the effective control of interlayer magnetism towards voltage switching, spin filtering and transistor applications. With the discovery of two-dimensional atomically thin magnets, a good platform provides us to manipulate interlayer magnetism for the control of magnetic orders. …”
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“…In this study, the maximum breakdown voltage of the recessed 40 nm transistor was 770 V. The etching depth of a recessed-gate device demonstrates its influence on device electrical performance.…”
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“…We present a simple and cost-effective fabrication technique for on-chip integration of pure edge contact two-terminal (2T) and Graphene field effect transistor (GFET) devices with low contact resistance and nonlinear characteristics based on single-layer chemical-vapor-deposited (CVD) graphene. …”
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