“…Interestingly, nanofield-effect transistor (nanoFET) based on individual CuO NW exhibited typical p-type electrical conduction, with a hole mobility of 0.129 cm(2)V(-1) s(-1) and hole concentration of 1.34 × 10(18) cm(-3), respectively. …”
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“…The processor combines organic p-type and soluble oxide n-type thin-film transistors in a new flavor of the familiar complementary transistor technology with the potential to be manufactured on a very thin polyimide film, enabling low-cost flexible electronics. …”
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“…However, rare reports are available on organic field effect transistor (OFET) memory employing photo-induced charges. …”
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“…Moreover, thinner and lighter glasses are desired for the fabrication of windows in buildings and cars, cover glasses for smart-phones and substrates in Thin-Film Transistor (TFT) displays. In this work, we report a 54Al(2)O(3)-46Ta(2)O(5) glass fabricated by aerodynamic levitation which possesses one of the highest elastic moduli and hardness for oxide glasses also displaying excellent optical properties. …”
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“…By placing additional h-BN on a SiO(2)/Si substrate for a MoS(2) (WSe(2)) field-effect transistor, the doping effect from gate oxide is minimized and furthermore the mobility is improved by four (150) times.…”
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“…All-polymer phototransistors with the BHJ (P3HT:PEHTPPD-BT) layers, featuring a peculiar nano-domain morphology, exhibit typical p-type transistor characteristics and efficiently detect broadband (VIS ~ NIR) lights. …”
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“…Here we report a label-free and portable aptasensor based on graphene field effect transistor (FET) for effective children blood lead detection. …”
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“…Good transistor performance with a low field peak hole mobility of 402 cm(2)/Vs is obtained, which indicates a high-quality of this GSOI structure. …”
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“…With continuous scaling of the transistor technology, miniaturization and high frequency operation of inductors have become the bottleneck to meet future demands of wireless communication systems. …”
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“…These results indicate that in situ PEALD SiO(2) may be a promising interfacial control layer for the realization of high-quality Ge-based transistor devices. Moreover, it can be demonstrated that PEALD is a much more powerful technology for ultrathin interfacial control layer deposition than MOCVD.…”
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“…Furthermore, by combining density functional theory and nonequilibrium Green’s function method, we directly investigate the transport characteristics of a field effect transistor based on the proposed heterostructures, which shows very low contact resistance, negligible leakage current, and easy gate control at a compact channel length.…”
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“…Modification of TEM(W165azF) with a DBCO–pyrene adduct had little effect on activity despite the modification site being close to a key catalytic residue but allowed directed assembly of the enzyme on graphene, potentially facilitating the construction of protein-gated carbon transistor systems.…”
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“…The synaptic conductance is updated by the local time-dependent superposition of pre- and post-synaptic spikes within a hybrid one-transistor/one-resistor (1T1R) memristive synapse. Only 2 synaptic states, namely the low resistance state (LRS) and the high resistance state (HRS), are sufficient to learn and recognize patterns. …”
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“…Obtained μτ values combined with recently reported mobility values of charge carriers in PbO suggest a new direction towards improvement of PbO technology by incorporation of Frisch grid or X-ray transistor architectures.…”
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“…Reliability issues associated with driving metal-oxide semiconductor thin film transistors (TFTs), which may arise from various sequential drain/gate pulse voltage stresses and/or certain environmental parameters, have not received much attention due to the competing desire to characterise the shift in the transistor characteristics caused by gate charging. …”
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“…Various transient devices, ranging from passive electronics (such as antenna, resistor, and capacitor) to active electronics (such as transistor, diodes, optoelectronics, and memories), and an integrated system as a platform demonstration have been developed to illustrate the concept and verify the feasibility of this design strategy.…”
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“…Eight mammography units manufactured by five different manufacturers located in hospitals in our region were investigated following the AAPM and Atomic Energy Regulatory Board (AERB) protocols using a solid-state dosimeter-based PTW-NOMEX Multimeter and a metal-oxide-semiconductor field-effect transistor. This study evaluated different operating parameters through mechanical test, accelerating voltage (kVp) accuracy test, machine output measurement, half-value layer measurement, calibration of compression device, image quality assessment, measurement of leakage radiation, radiation survey, and average glandular dose (AGD) measurements using stereotactic needle biopsy phantom. …”
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“…Direct read-out and built-in amplification are accomplished via photogating of a graphene field-effect transistor (GFET) by carriers generated within a deeply depleted low-doped silicon substrate. …”
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“…We demonstrate an electrochemical sensor for detection of unlabeled single-stranded DNA using peptide nucleic acid (PNA) probes coupled to the field-effect transistor (FET) gate. The label-free detection relies on the intrinsic charge of the DNA backbone. …”
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“…The finding is of key importance for fabrication of proposed dual-gated spin-field effect transistor. Moreover, the spin-split band leads to a spin–momentum locking Fermi surface from which superconductivity emerges. …”
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