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  1. 3361
    “…A metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) structure on an AlGaN/GaN heterostructure is prepared. …”
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    High Thermoelectric Power Factor of High‐Mobility 2D Electron Gas
  2. 3362
    “…Our proposal is based on the well known manufacturable 1-transistor - 1-MTJ bit-cell and does not require any modifications in the bit-cell circuit or the magnetic device. …”
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    In-situ, In-Memory Stateful Vector Logic Operations based on Voltage Controlled Magnetic Anisotropy
  3. 3363
    por Sharma, Bharat, Kim, Jung-Sik
    Publicado 2018
    “…A low power, dual-gate field-effect transistor (FET) hydrogen gas sensor with graphene decorated Pd-Ag for hydrogen sensing applications was developed. …”
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    MEMS based highly sensitive dual FET gas sensor using graphene decorated Pd-Ag alloy nanoparticles for H(2) detection
  4. 3364
    “…To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). …”
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    Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers
  5. 3365
    por Miyata, Noriyuki
    Publicado 2018
    “…IDM can be integrated as a Si field-effect transistor (FET) based memory device. The first demonstration of this concept employed a HfO(2)/Si MOS capacitor where the interface monolayer (ML) TiO(2) functions as a dipole modulator. …”
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    Electric-field-controlled interface dipole modulation for Si-based memory devices
  6. 3366
    “…Conventional transistor electronics are reaching their limits in terms of scalability, power dissipation, and the underlying Boolean system architecture. …”
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    Unsupervised Hebbian learning experimentally realized with analogue memristive crossbar arrays
  7. 3367
    “…MoS(2) RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS(2) switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. …”
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    Zero-static power radio-frequency switches based on MoS(2) atomristors
  8. 3368
    “…The sensor platform exhibiting high-performance transistor characteristics in buffer solutions is thoroughly characterized using state-of-the-art surface and electrical measurement techniques. …”
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    On the Use of Scalable NanoISFET Arrays of Silicon with Highly Reproducible Sensor Performance for Biosensor Applications
  9. 3369
    “…In vivo interstitial measurements with micro-MOSFET-detectors (metal oxide semiconductor field effect transistor) were performed in 12 patients with different anatomic locations of cancers, including thorax-wall, head and neck, breast, and different types of implantations (monoplanar, loops, and multiplanar). …”
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    Quality assurance during interstitial brachytherapy: in vivo dosimetry using MOSFET dosimeters
  10. 3370
    “…Here, we present a compelling case for multilayer MoSe(2) phototransistors fabricated in a bottom-gate thin-film transistor configuration on SiO(2)/Si substrates. Under 650-nm-laser, our MoSe(2) phototransistor exhibited the best performance among MoSe(2) phototransistors in literature, including the highest responsivity (1.4 × 10(5) AW(−1)), the highest specific detectivity (5.5 × 10(13) jones), and the fastest response time (1.7 ms). …”
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    High-Responsivity Multilayer MoSe(2) Phototransistors with Fast Response Time
  11. 3371
    “…As a demonstration case, we examined using an organic electrochemical transistor (OECT) within this system to monitor lactate concentration. …”
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    Wearable Sensor System for Detection of Lactate in Sweat
  12. 3372
    por Yao, Lele, Li, Donghui, Liu, Lingling
    Publicado 2018
    “…The conduction time of the metal oxide semiconductor field effect transistor (MOSFET) in each switching period, and the power efficiency of converter are regarded as the global indexes. …”
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    An improved power loss model of full-bridge converter under light load condition
  13. 3373
    “…More significantly, their corresponding thin film transistor (TFT) with low contact resistance (R(SD) = 0.3 MΩ) exhibits excellent performance with a saturation mobility (µ(sat)) of 8.59 cm(2)/V·s, an I(on)/I(off) ratio of 4.13 × 10(6), a subthreshold swing (SS) of 0.435 V/decade, as well as good stability under PBS/NBS. …”
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    Highly Conductive and Transparent AZO Films Fabricated by PLD as Source/Drain Electrodes for TFTs
  14. 3374
    “…Here we report a novel paradigm for sensing modulators: a graphene field-effect transistor device that directly modulates a radio frequency (RF) electrical carrier signal when exposed to chemical agents, with a memory effect in its electrochemical history. …”
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    Chemical-sensitive graphene modulator with a memory effect for internet-of-things applications
  15. 3375
    “…We demonstrate an active type UV PD with a ZnO nanorod (NR) structure for the floating gate of AlGaN/GaN high electron mobility transistor (HEMT), where the AlGaN/GaN epitaxial layers are isolated by the nano-scale fins (NFIs) of two different fin widths (70 and 80 nm). …”
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    High-Performance Ultraviolet Light Detection Using Nano-Scale-Fin Isolation AlGaN/GaN Heterostructures with ZnO Nanorods
  16. 3376
    “…Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for flexible and wearable electronics. …”
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    Low-voltage high-performance flexible digital and analog circuits based on ultrahigh-purity semiconducting carbon nanotubes
  17. 3377
    “…Here, we present the design, fabrication and characterization of a device able to work as an acoustic diode, a switch and a transistor-like apparatus, exploiting symmetry-breaking nonlinear effects like harmonic generation and wave mixing, and the filtering capabilities of metamaterials. …”
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    Proof of concept of a frequency-preserving and time-invariant metamaterial-based nonlinear acoustic diode
  18. 3378
    “…[Image: see text] Self-assembly of semiconductor nanocrystals (NCs) into two-dimensional patterns or three-dimensional (2-3D) superstructures has emerged as a promising low-cost route to generate thin-film transistors and solar cells with superior charge transport because of enhanced electronic coupling between the NCs. …”
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    Long-Range Order in Nanocrystal Assemblies Determines Charge Transport of Films
  19. 3379
    “…In the π−π stacking and hydrogen-bonding directions, the intrinsic, short-range hole mobilities reach as high as 6.5 cm(2)V(−1)s(−1) and 4.2 cm(2)V(−1)s(−1) measured by microwave conductivity, and the long-range apparent hole mobilities are up to 1.3 × 10(–3) cm(2)V(−1)s(−1) and 0.4 × 10(–3) cm(2)V(−1)s(−1) measured in field-effect transistors. We further demonstrate printed transistor devices and chemical sensors as potential applications.…”
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    Repurposing DNA-binding agents as H-bonded organic semiconductors
  20. 3380
    “…Therefore, silicon in its most extremely scaled form remains a competitive material for future nanoscale transistor technology, provided scattering with out-of-plane acoustic phonons could be suppressed.…”
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    Electronic Transport Properties of Silicane Determined from First Principles
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