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3381por Lin, Yen-Hung, Huang, Wentao, Pattanasattayavong, Pichaya, Lim, Jongchul, Li, Ruipeng, Sakai, Nobuya, Panidi, Julianna, Hong, Min Ji, Ma, Chun, Wei, Nini, Wehbe, Nimer, Fei, Zhuping, Heeney, Martin, Labram, John G., Anthopoulos, Thomas D., Snaith, Henry J.“…Here we report hybrid hetero-phototransistors by integrating perovskites with organic semiconductor transistor channels to form either “straddling-gap” type-I or “staggered-gap” type-II heterojunctions. …”
Publicado 2019
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3382por Xiong, L., Forsythe, C., Jung, M., McLeod, A. S., Sunku, S. S., Shao, Y. M., Ni, G. X., Sternbach, A. J., Liu, S., Edgar, J. H., Mele, E. J., Fogler, M. M., Shvets, G., Dean, C. R., Basov, D. N.“…Our electrostatically-tunable photonic crystals are derived from standard metal oxide semiconductor field effect transistor technology and pave a way for practical on-chip light manipulation.…”
Publicado 2019
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3383por Zhang, Shuo, Ma, Bei, Zhou, Xingyu, Hua, Qilin, Gong, Jian, Liu, Ting, Cui, Xiao, Zhu, Jiyuan, Guo, Wenbin, Jing, Liang, Hu, Weiguo, Wang, Zhong Lin“…By using the cantilever-structured AlGaN/AlN/GaN-based high electron mobility transistor, the device can control significant output power modulation (2.30–2.72 × 10(3) W cm(−2)) with weak mechanical stimuli (0–16 mN) at a gate bias of 1 V. …”
Publicado 2020
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3384por Tuszynski, Jack A., Friesen, Douglas, Freedman, Holly, Sbitnev, Valery I., Kim, Hyongsuk, Santelices, Iara, Kalra, Aarat P., Patel, Sahil D., Shankar, Karthik, Chua, Leon O.“…It has been hypothesized that MTs also possess intrinsic capacitive and inductive properties, leading to transistor-like behavior. Here, we show a theoretical basis and experimental support for the assertion that MTs under specific circumstances behave consistently with the definition of a memristor. …”
Publicado 2020
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3385por Park, Minseong, Baek, Yongmin, Dinare, Mesgana, Lee, Doeon, Park, Kyung-Ho, Ahn, Jungho, Kim, Dahee, Medina, Joseff, Choi, Won-Jin, Kim, Sihwan, Zhou, Changjie, Heo, Junseok, Lee, Kyusang“…The hetero-integrated ToF sensors show superior switching performance when compared to silicon-transistor-based systems, miniaturizing size and exhibiting stable ranging and high-resolution depth-imaging. …”
Publicado 2020
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3386por Zhuk, Maksim, Zarubin, Sergei, Karateev, Igor, Matveyev, Yury, Gornev, Evgeny, Krasnikov, Gennady, Negrov, Dmitiry, Zenkevich, Andrei“…Here, we evaluate the parameters of TaO(x)-based resistive switching (RS) memory devices produced by magnetron sputtering technique and integrated with the 180-nm CMOS field-effect transistors as possible candidates for on-chip memory in the hybrid neurointerface under development. …”
Publicado 2020
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3387“…The improvement in transistor electrical performance can be attributed to the combined effect of enhanced crystal orientation and uniformity, as well as increased areal coverage. …”
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3388por Hwang, Michael Taeyoung, Heiranian, Mohammad, Kim, Yerim, You, Seungyong, Leem, Juyoung, Taqieddin, Amir, Faramarzi, Vahid, Jing, Yuhang, Park, Insu, van der Zande, Arend M., Nam, Sungwoo, Aluru, Narayana R., Bashir, Rashid“…Field-effect transistor (FET)-based biosensors allow label-free detection of biomolecules by measuring their intrinsic charges. …”
Publicado 2020
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3389“…The gas biosensor array was fabricated using the single-wall carbon nanotubes (SWNTs) immobilized on the surface of field-effect transistor, and then non-covalently functionalized with different single-strand DNAs (ssDNA) through π–π interaction. …”
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3390por Kong, Lingan, Zhang, Xiaodong, Tao, Quanyang, Zhang, Mingliang, Dang, Weiqi, Li, Zhiwei, Feng, Liping, Liao, Lei, Duan, Xiangfeng, Liu, Yuan“…Two-dimensional (2D) semiconductors have attracted considerable attention for the development of ultra-thin body transistors. However, the polarity control of 2D transistors and the achievement of complementary logic functions remain critical challenges. …”
Publicado 2020
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3391“…The highly-purified ODR-10 was stabilized in micelle structures, and it was immobilized on a carbon nanotube field-effect transistor to build a bioelectronic nose for the detection of diacetyl, a butter flavor substance, via the specific interaction between diacetyl and ODR-10. …”
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3392por Zhang, Huilong, Li, Jinghao, Liu, Dong, Min, Seunghwan, Chang, Tzu-Hsuan, Xiong, Kanglin, Park, Sung Hyun, Kim, Jisoo, Jung, Yei Hwan, Park, Jeongpil, Lee, Juhwan, Han, Jung, Katehi, Linda, Cai, Zhiyong, Gong, Shaoqin, Ma, Zhenqiang“…However, the prevalent studies on flexible microwave electronics have only focused on individual flexible microwave elements such as transistors, inductors, capacitors, and transmission lines. …”
Publicado 2020
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3393por Park, SangWook, Liao, Zhongquan, Ibarlucea, Bergoi, Qi, Haoyuan, Lin, Hung‐Hsuan, Becker, Daniel, Melidonie, Jason, Zhang, Tao, Sahabudeen, Hafeesudeen, Baraban, Larysa, Baek, Chang‐Ki, Zheng, Zhikun, Zschech, Ehrenfried, Fery, Andreas, Heine, Thomas, Kaiser, Ute, Cuniberti, Gianaurelio, Dong, Renhao, Feng, Xinliang“…A hybrid memory device composed of 2D BECOF‐PP film on silicon nanowire‐based field‐effect transistor is demonstrated as a bio‐inspired system to mimic neuronal synapses, displaying a learning–erasing–forgetting memory process.…”
Publicado 2020
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3394por Liu, Jia, Wang, Jiechen, Zhang, Zhitao, Molina-Lopez, Francisco, Wang, Ging-Ji Nathan, Schroeder, Bob C., Yan, Xuzhou, Zeng, Yitian, Zhao, Oliver, Tran, Helen, Lei, Ting, Lu, Yang, Wang, Yi-Xuan, Tok, Jeffrey B.-H., Dauskardt, Reinhold, Chung, Jong Won, Yun, Youngjun, Bao, Zhenan“…Briefly, it is comprised of a stretchable light-emitting electrochemical cell array driven by a solution-processed, vertically integrated stretchable organic thin-film transistor active-matrix, which is enabled by the development of chemically-orthogonal and intrinsically stretchable dielectric materials. …”
Publicado 2020
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3395por Qian, Li, Wenlu, Zhang, Hong, Wang, Juan, Deng, Xinli, Tian, Linlin, Wang, Hong, Sha“…In the experiment, a switching transistor controlled high frequency DC (12.5 kHz) was used to create a continuous discharge arc between two stainless steel electrodes (1-mm separation) after high-voltage breakthrough. …”
Publicado 2020
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3396por Zahari, Finn, Pérez, Eduardo, Mahadevaiah, Mamathamba Kalishettyhalli, Kohlstedt, Hermann, Wenger, Christian, Ziegler, Martin“…The analogue and massive parallel in-memory computing in biology differs strongly from conventional transistor electronics that rely on the von Neumann architecture. …”
Publicado 2020
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3397por Martín-Mateos, Pedro, Čibiraitė-Lukenskienė, Dovilė, Barreiro, Roberto, de Dios, Cristina, Lisauskas, Alvydas, Krozer, Viktor, Acedo, Pablo“…Using a field-effect transistor-based terahertz resonant 300 GHz detector and the raster-scanning method we demonstrate the two-dimensional hyperspectral imaging of samples of different kinds to illustrate the remarkable capabilities of this innovative architecture. …”
Publicado 2020
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3398por Jia, Shujing, Li, Huanglong, Gotoh, Tamihiro, Longeaud, Christophe, Zhang, Bin, Lyu, Juan, Lv, Shilong, Zhu, Min, Song, Zhitang, Liu, Qi, Robertson, John, Liu, Ming“…Besides the conventional silicon transistor, two-terminal ovonic threshold switching device with much higher scalability is currently the most industrially favored selector technology. …”
Publicado 2020
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3399por Brown, James, Zhang, Jian Fu, Zhou, Bo, Mehedi, Mehzabeen, Freitas, Pedro, Marsland, John, Ji, Zhigang“…It uses the inherent randomness of telegraph noise in the channel current of a single CMOS transistor as an entropy source. For the first time multi-level and abnormal telegraph noise can be utilised, which greatly reduces device selectivity and offers much greater bitrates. …”
Publicado 2020
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3400por Asgarnezhad-Zorgabad, Saeid“…Our waveguide configuration acts as a surface plasmon laser and quantum plasmonic transistor and opens prospects for designing controllable nano-scale lasers for quantum and nano-photonic applications.…”
Publicado 2021
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