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3441“…Recently, the security impact of noise coupling among multiple masking shares has been demonstrated both in practical FPGA implementations and with extensive transistor level simulations. Due to the highly sophisticated interactions in modern VLSI circuits, the interactions among multiple masking shares are quite challenging to model and thus information leakage from one share to another through noise coupling is difficult to mitigate. …”
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3442“…Graphene is even considered a potential substitute for the post-Si electronics era, where a high-performance graphene-based field-effect transistor (GFET) can be fabricated to detect the lethal SARS-CoV-2. …”
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3443por Li, Shixiao, Xu, Yijian, Zhan, Zhiyu, Du, Pengyuan, Liu, Linwei, Li, Zikai, Wang, Huawei, Bai, Pengfei“…In this paper, a dynamic adaptive display model based on thin film transistor-electrowetting display (TFT-EWD) was proposed. …”
Publicado 2022
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3444“…It is also shown, that the area of the access transistor can be reduced by approximately 10%, while maintaining the same energy-delay product and reducing gate RC delay.…”
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3445por Kamarozaman, Nur Syahirah, Zainal, Nurbaya, Rosli, Aimi Bazilah, Zulkefle, Muhammad Alhadi, Nik Him, Nik Raikhan, Abdullah, Wan Fazlida Hanim, Herman, Sukreen Hana, Zulkifli, Zurita“…The films have been explored as a sensing electrode (SE) of extended gate field-effect transistor (EGFET) for pH applications in the range of pH 2 to 12. …”
Publicado 2022
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3446por Ochiai, Takaya, Akazawa, Tomohiro, Miyatake, Yuto, Sumita, Kei, Ohno, Shuhei, Monfray, Stéphane, Boeuf, Frederic, Toprasertpong, Kasidit, Takagi, Shinichi, Takenaka, Mitsuru“…The Si waveguide gate underneath the InGaAs ultrathin channel enables the effective control of transistor current without optical absorption by the gate metal. …”
Publicado 2022
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3447por Jiang, Mengjia, Li, Shuyu, Zhen, Chun, Wang, Lingsong, Li, Fei, Zhang, Yihan, Dong, Weibing, Zhang, Xiaotao, Hu, Wenping“…The highest electron mobility of organic field-effect transistor (OFET) based on Flu-TCNQ is 0.32 cm(2) V(−1) s(−1). …”
Publicado 2022
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3448“…Furthermore, a few layered HfS(2) back gate field-effect transistor (FET) is fabricated based on directly grown HfS(2) on SiO(2)/Si, and the device exhibits p-type behaviour. …”
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3449por Watanabe, Nanami, He, Waner, Nozaki, Naoya, Matsumoto, Hidetoshi, Michinobu, Tsuyoshi“…Hence, the facilitated charge injection resulted in ambipolar transistor performances with the optimized hole and electron mobilities of 0.00134 and 0.151 cm(2) V(−1) s(−1), respectively. …”
Publicado 2022
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3450por Chandra, Sai Srinivas, Kannan, R. Jagadeesh, Balaji, B. Saravana, Veeramachaneni, Sreehari, Noor Mahammad, Sk.“…This paper aims to bring a trade-off between these parameters, with security being the main key factor, and ensure the design metrics by proposing a novel transistor-level method of logic encryption for CMOS gates. …”
Publicado 2023
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3451por Halter, Mattia, Bégon-Lours, Laura, Sousa, Marilyne, Popoff, Youri, Drechsler, Ute, Bragaglia, Valeria, Offrein, Bert Jan“…Here, we report on sub-µm-sized artificial synaptic weights exploiting a combination of a ferroelectric space charge effect and oxidation state modulation in the oxide channel of a ferroelectric field effect transistor. They lead to a quasi-continuous resistance tuning of the synapse by a factor of [Formula: see text] and a fine-grained weight update of more than [Formula: see text] resistance values. …”
Publicado 2023
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3452por Sarkar, Abdus Salam, Konidakis, Ioannis, Gagaoudakis, E., Maragkakis, G. M., Psilodimitrakopoulos, S., Katerinopoulou, D., Sygellou, L., Deligeorgis, G., Binas, Vassilios, Oikonomou, Ilias M., Komninou, Philomela, Kiriakidis, G., Kioseoglou, G., Stratakis, E.“…At the same time, monolayer‐based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10(−3) A W(−1) and remarkable stability upon prolonged operation in ambient conditions. …”
Publicado 2022
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3453por Sk, Masud Rana, Thunder, Sunanda, Lehninger, David, Sanctis, Shawn, Raffel, Yannick, Lederer, Maximilian, Jank, Michael P. M., Kämpfe, Thomas, De, Sourav, Chakrabarti, Bhaswar“…[Image: see text] Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being vigorously investigated for being deployed in computing-in-memory (CIM) applications. …”
Publicado 2023
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3454Publicado 1997Tabla de Contenidos: “…Minority carriers and the first two transistors / Michael Riordan and Lillian Hoddeson -- From germanium to silicon : a history of change in the technology of the semiconductor / Philip Seidenberg -- Complementarity, cooperation, and collective innovation : materials research in the semiconductor industry / Daniel Holbrook -- Jack Avins : the essence of engineering / Andrew Goldstein -- The social construction of the microprocessor : a Japanese and American story / William Aspray -- A review of U.K. government involvement in the field of semiconductor technology within the research establishments / P.R. …”
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3455por Gundacker, Stefan, Turtos, Rosana Martinez, Auffray, Etiennette, Paganoni, Marco, Lecoq, Paul“…This paper shows that high-frequency bipolar transistor readout of state-of-the-art SiPMs coupled to high-performance scintillators can substantially improve the best achievable coincidence time resolution (CTR) in TOF-PET. …”
Publicado 2019
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3456por Decker, Savannah M, Pizzichemi, Marco, Polesel, Andrea, Paganoni, Marco, Auffray, Etiennette, Gundacker, Stefan“…Using a HF bipolar transistor readout, a similar trend was observed, with a minimum CTR of 116 ± 5 ps for the single array and the 6x6x3 mm$^{3}$crystal. …”
Publicado 2019
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3457“…In the analysis of the Class-E inverter, the voltage-dependent non-linearities of C(ds), C(gd), and R(ON) as well as temperature-dependent non-linearity of R(ON) of the transistor are considered simultaneously. Close agreement of theoretical, simulated and experimental results confirmed the validity of the proposed approach in taking into account these nonlinear effects. …”
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3458“…Graphene field effect transistor (FET) biosensors have attracted huge attention in the point-of-care and accurate detection. …”
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3459“…Such permanent faults may come from manufacturing defects during the fabrication process, and/or from device/transistor damages (e.g., due to wear out) during the run-time operation. …”
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3460por Li, Yang, Li, Nan, Liu, Wei, Prominski, Aleksander, Kang, Seounghun, Dai, Yahao, Liu, Youdi, Hu, Huawei, Wai, Shinya, Dai, Shilei, Cheng, Zhe, Su, Qi, Cheng, Ping, Wei, Chen, Jin, Lihua, Hubbell, Jeffrey A., Tian, Bozhi, Wang, Sihong“…We have demonstrated stretchable transistor arrays and active-matrix circuits with moduli below 10 kPa—over two orders of magnitude lower than the current state of the art. …”
Publicado 2023
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