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3541por Ohayon, David, Renn, Dominik, Wustoni, Shofarul, Guo, Keying, Druet, Victor, Hama, Adel, Chen, Xingxing, Maria, Iuliana Petruta, Singh, Saumya, Griggs, Sophie, Schroeder, Bob C., Rueping, Magnus, McCulloch, Iain, Inal, Sahika“…We developed an electrochemical transistor comprising an n-type conjugated polymer film in contact with a catalytic enzyme for sensitive and selective glucose detection in bodily fluids. …”
Publicado 2023
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3542por Shin, Wonjun, Jeong, Yujeong, Kim, Mingyu, Lee, Jungsoo, Koo, Ryun-Han, Hong, Seongbin, Jung, Gyuweon, Kim, Jae-Joon, Lee, Jong-Ho“…We investigate the impact of OSS on the gas sensing performances, including response, low-frequency noise, and signal-to-noise ratio of horizontal floating-gate field-effect-transistor (FET)-type gas sensors. The 1/f noise is increased after the OSS is applied to the sensor because the gate oxide is damaged by hot holes. …”
Publicado 2023
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3543por Jiang, Jie, Chen, Qiuqi, Hu, Shengdong, Shi, Yijun, He, Zhiyuan, Huang, Yun, Hui, Caixin, Chen, Yiqiang, Wu, Hao, Lu, Guoguang“…This work investigated the effects of single stress and electro-thermo-mechanical coupling stress on the electrical properties of top-cooled enhancement mode (E-mode) Aluminium Gallium Nitride/Gallium Nitride (AlGaN/GaN) high electron mobility transistor (HEMT) (GS66508T). Planar pressure, linear deformation, punctate deformation, environmental temperature, electro-thermal coupling, thermo-mechanical coupling, and electro-thermo-mechanical coupling stresses were applied to the device. …”
Publicado 2023
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3544Publicado 1961Tabla de Contenidos: “…Radio, tubos electrónicos, electrónica, tubos fotoeléctricos, rayos x, semiconductores y transistores.…”
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3545por Zito, Marco“…Les rayons X et leurs applications médicales, la supraconductivité, le transistor, Internet sont nés dans les laboratoires de physique. …”
Publicado 2015
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3546por Karacson, Matthias“…Active radiation monitors, consisting of small printed-circuit-boards with multiple radiation sensitive field-effect-transistor and diode sensors have been installed close to passive sensor positions to allow for the monitoring of both peak and long term radiation levels. …”
Publicado 2017
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3547por Azeem, M. Mustafa, Shafa, Muhammad, Aamir, Muhammad, Zubair, Muhammad, Souayeh, Basma, Alam, Mir Waqas“…The optical sensors included fluorescence (FL), surface plasmon resonance (SPR), colorimetric, and surface-enhanced Raman scattering (SERS), while electrical sensors included electrochemical luminescence (ECL), microfluidic chip, and field-effect transistor (FET). A synopsis of sensing materials, mechanisms, detection limits, and ranges has been provided. …”
Publicado 2023
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3548por Chen, Jibing, Liu, Bowen, Hu, Maohui, Huang, Shisen, Yu, Shanji, Wu, Yiping, Yang, Junsheng“…The insulated-gate bipolar transistor (IGBT) represents a crucial component within the domain of power semiconductor devices, which finds ubiquitous employment across a range of critical domains, including new energy vehicles, smart grid systems, rail transit, aerospace, etc. …”
Publicado 2023
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3549por Aydogmus, Hande, Hu, Michel, Ivancevic, Lovro, Frimat, Jean-Philippe, van den Maagdenberg, Arn M. J. M., Sarro, Pasqualina M., Mastrangeli, Massimo“…The first unit consists of a floating-gate field-effect transistor (FG-FET), which is used to monitor changes in pH in the sensing area. …”
Publicado 2023
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3550“…In the proposed hybrid detector design, the central scintillator and thin-film transistor elements in the FPD are replaced with a semiconductor PCD module to upgrade the imaging capabilities of the C-arm system while preserving the full FOV coverage. …”
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3551por Cho, Eunseog, Son, Won-Joon, Cho, Eunae, Jang, Inkook, Kim, Dae Sin, Min, Kyoungmin“…As transistor integration accelerates and miniaturization progresses, improving the interfacial adhesion characteristics of complex metal interconnect has become a major issue in ensuring semiconductor device reliability. …”
Publicado 2023
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3552por Xu, Han, Shang, Dashan, Luo, Qing, An, Junjie, Li, Yue, Wu, Shuyu, Yao, Zhihong, Zhang, Woyu, Xu, Xiaoxin, Dou, Chunmeng, Jiang, Hao, Pan, Liyang, Zhang, Xumeng, Wang, Ming, Wang, Zhongrui, Tang, Jianshi, Liu, Qi, Liu, Ming“…In this study, we report on the development of a compact and low-power neurotransistor based on a vertical dual-gate electrolyte-gated transistor (EGT) with short-term memory characteristics, a 30 nm channel length, a record-low read power of ~3.16 fW and a biology-comparable read energy of ~30 fJ. …”
Publicado 2023
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3553por Sonkar, Rahul, Mondal, Nur Jalal, Thakur, Samir, Saikia, Eeshankur, Ghosh, Mritunjoy Prasad, Chowdhury, Devasish“…Therefore, besides showing photocatalytic effects, Co-doped ZnS QDs act as ideal dilute magnetic semiconductors (DMSs) and will undoubtedly become excellent candidates for the microelectronics industry because of their special ability to exhibit spin-dependent magneto-electro-optical properties that find use in spin-polarized light-emitting diodes, solid-state lasers, and spin-transistor devices.…”
Publicado 2023
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3554por Kasap, Safa, Frey, Joel B., Belev, George, Tousignant, Olivier, Mani, Habib, Greenspan, Jonathan, Laperriere, Luc, Bubon, Oleksandr, Reznik, Alla, DeCrescenzo, Giovanni, Karim, Karim S., Rowlands, John A.“…While passive pixel sensors use one TFT (thin film transistor) as a switch at the pixel, active pixel sensors (APSs) have two or more transistors and provide gain at the pixel level. …”
Publicado 2011
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3555“…When performing dose measurements on an X-ray device with multiple angles of irradiation, it is necessary to take the angular dependence of metal-oxide-semiconductor field-effect transistor (MOSFET) dosimeters into account. The objective of this study was to investigate the angular sensitivity dependence of MOSFET dosimeters in three rotational axes measured free-in-air and in soft-tissue equivalent material using dental photon energy. …”
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3556“…Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices. …”
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3557“…[Image: see text] HfSe(2) is a very good candidate for a transition metal dichalcogenide-based field-effect transistor owing to its moderate band gap of about 1 eV and its high-κ dielectric native oxide. …”
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3558por Tuntipumiamorn, Lalida, Nakkrasae, Pitchayut, Kongkum, Sansanee, Dankulchai, Pittaya“…PURPOSE: This study was performed using end-to-end testing and real-time in vivo skin dose measurements, using metal oxide semiconductor field effect transistor (MOSFET) dosimeters on our first chronic psoriasis patient treated with iridium-192 ((192)Ir) high-dose-rate (HDR) brachytherapy (BT). …”
Publicado 2019
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3559por Hirtzlin, Tifenn, Bocquet, Marc, Penkovsky, Bogdan, Klein, Jacques-Olivier, Nowak, Etienne, Vianello, Elisa, Portal, Jean-Michel, Querlioz, Damien“…Our circuit employs hafnium oxide resistive memory integrated in the back end of line of a 130-nm CMOS process, in a two-transistor, two-resistor cell, which allows the exclusive NOR operations of the neural network to be performed directly within the sense amplifiers. …”
Publicado 2020
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3560por Bonné, Robin, Hou, Ji-Ling, Hustings, Jeroen, Wouters, Koen, Meert, Mathijs, Hidalgo-Martinez, Silvia, Cornelissen, Rob, Morini, Filippo, Thijs, Sofie, Vangronsveld, Jaco, Valcke, Roland, Cleuren, Bart, Meysman, Filip J. R., Manca, Jean V.“…Furthermore, when cable bacterium filaments are utilized as the channel in a field-effect transistor, they show n-type transport suggesting that electrons are the charge carriers. …”
Publicado 2020
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