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  1. 3601
    “…State-of-the art computers need high performance transistors, which consume ultra-low power resulting in longer battery lifetime. …”
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    Online Artículo Texto
    Can We Build a Truly High Performance Computer Which is Flexible and Transparent?
  2. 3602
    “…Using a highly reliable interconnect method, the highest stacked organic transistors to date, a three-dimensional organic integrated circuits consisting of 5 transistors and 20 metal layers, is successfully fabricated in a solvent-free manner. …”
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    Highly stacked 3D organic integrated circuits with via-hole-less multilevel metal interconnects
  3. 3603
    “…An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). …”
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    Dirac-source diode with sub-unity ideality factor
  4. 3604
    “…Recent years have seen tremendous progress towards understanding the relation between the molecular structure and function of organic field effect transistors. The metrics for organic field effect transistors, which are characterized by mobility and the on/off ratio, are known to be enhanced when the intermolecular interaction is strong and the intramolecular reorganization energy is low. …”
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    The importance of intramolecular conductivity in three dimensional molecular solids
  5. 3605
    “…Nano-scale vacuum channel transistors possess merits of higher cutoff frequency and greater gain power as compared with the conventional solid-state transistors. …”
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    Field-Induced Crystalline-to-Amorphous Phase Transformation on the Si Nano-Apex and the Achieving of Highly Reliable Si Nano-Cathodes
  6. 3606
    “…The responsivity of AlGaN/GaN high-electron mobility transistors (HEMTs) when operating as zero-bias RF detectors in the subthreshold regime exhibits different behaviors depending on the operating temperature and gate length of the transistors. …”
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    Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
  7. 3607
    por Pridham, Gordon John, Hiller, N
    Publicado 1972
    “…The physics of semiconductor devices is described, along with field effect transistors, small-signal equivalent circuits of bipolar transistors, and integrated circuits. …”
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    Electronic devices and circuits
  8. 3608
    “…In conventional computers, wiring between transistors is required to enable the execution of Boolean logic functions. …”
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    Interconnect-free parallel logic circuits in a single mechanical resonator
  9. 3609
    “…We have theoretically investigated the effects of random discrete distribution of implanted and annealed arsenic (As) atoms on device characteristics of silicon nanowire (Si NW) transistors. Kinetic Monte Carlo simulation is used for generating realistic random distribution of active As atoms in Si NWs. …”
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    Discrete distribution of implanted and annealed arsenic atoms in silicon nanowires and its effect on device performance
  10. 3610
    por ATLAS Pixel Collaboration
    Publicado 2016
    “…The effect of radiation on those transistors was investigated in lab measurements and the results will be presented in this talk.…”
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    Total Ionization Dose effects in the FE-I4 front-end chip of the ATLAS Pixel IBL detector
  11. 3611
    por Fischer-Cripps, Anthony C
    Publicado 2014
    “…This concise yet detailed book covers introductory electrical principles (DC and AC circuits), the physics of electronics components, circuits involving diodes and transistors, transistors amplifiers, filtering, operational amplifiers, digital electronics, transformers, instrumentation, and power supplies.…”
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    The electronics companion: devices and circuits for physicists and engineers
  12. 3612
    “…The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. …”
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    3D modeling of dual-gate FinFET
  13. 3613
    “…GaNFETs are radiation-tolerant transistors that permit switching off high voltage to malfunctioning sensors. …”
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    Radiation tolerance studies of the HV-mux GaNFETs for the HL-LHC ATLAS ITk Strip Detector
  14. 3614
    “…Diazatetracene‐based cyclodimers and cyclotrimers were used as semiconductors in thin‐film transistors. Although their optoelectronic properties are quite similar, their electron mobilities in proof‐of‐concept thin‐film transistors differ by an order of magnitude.…”
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    Cyclodimers and Cyclotrimers of 2,3 ‐Bisalkynylated Anthracenes, Phenazines and Diazatetracenes
  15. 3615
    por Dailey, Denton J
    Publicado 2013
    “…The main thrust of the material is analog circuitry, focusing on fundamental principles of transistors, integrated circuit and vacuum tube-based amplifier operation and theory, and operation of typical guitar signal processing effects circuits. …”
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    Electronics for Guitarists
  16. 3616
    “…This transformation allows for the creation of several fundamental nanoelectronic and optoelectronic devices, including flexible Schottky barrier field-effect transistors, dual-gated graphene transistors, and vertical light-emitting/detecting tunneling transistors. …”
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    Laser-writable high-k dielectric for van der Waals nanoelectronics
  17. 3617
    “…The post-Moore's era has boosted the progress in carbon nanotube-based transistors. Indeed, the 5G communication and cloud computing stimulate the research in applications of carbon nanotubes in electronic devices. …”
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    Applications of Carbon Nanotubes in the Internet of Things Era
  18. 3618
    “…We have fabricated organic field-effect transistors (OFETs) with regioregular poly(3-hexylthiophene) (P3HT) operable at low-voltages in liquid solutions, suitable for in vitro biosensing applications. …”
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    Organic ISFET Based on Poly (3-hexylthiophene)
  19. 3619
    “…Our results might give physical solution rather than the engineering one to the intrinsic problems in these high frequency/power transistors.…”
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    Rogue waves lead to the instability in GaN semiconductors
  20. 3620
    “…This technology provides a new way for advanced 3D transistors and sensors.…”
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    A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nm
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