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  1. 3641
    “…Based on the proposed structure, traditional C(2)MOS latch (tristate inverter/clocked inverter) based flip-flop is implemented with fewer transistors. The modified C(2)MOS based flip-flop designs mC(2)MOSff1 and mC(2)MOSff2 are realized using only sixteen transistors each while the number of clocked transistors is also reduced in case of mC(2)MOSff1. …”
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    A Modified Implementation of Tristate Inverter Based Static Master-Slave Flip-Flop with Improved Power-Delay-Area Product
  2. 3642
    “…Yet, the polycrystalline nature of the material presents significant challenges when used in transistors with strongly scaled channel lengths due to non-uniformity in device performance. …”
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    Towards manufacturing high uniformity polysilicon circuits through TFT contact barrier engineering
  3. 3643
    “…In the section of spintronic applications, we highlight spintronic devices based on 2DMMs, e.g., spin valves, spin-orbit torque, spin field-effect transistors, spin tunneling field-effect transistors, and spin-filter magnetic tunnel junctions. …”
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    Recent Advances in Two-Dimensional Magnets: Physics and Devices towards Spintronic Applications
  4. 3644
    “…This paper investigates the impact of such high radiation on transistors fabricated in a commercial 28 nm bulk CMOS process with the perspective of using it for the future silicon-based detectors. …”
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    Impact of GigaRad Ionizing Dose on 28 nm bulk MOSFETs for future HL-LHC
  5. 3645
    por Shen, Guozhen, Chen, Di
    Publicado 2009
    “…Novel electronic and optoelectronic devices built on 1-D II–V semiconducting nanostructures will also be discussed, which include metal–insulator-semiconductor field-effect transistors, metal-semiconductor field-effect transistors, andp–nheterojunction photodiode. …”
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    One-Dimensional Nanostructures and Devices of II–V Group Semiconductors
  6. 3646
    “…Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. …”
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    Atom devices based on single dopants in silicon nanostructures
  7. 3647
    “…This prevents the collection of radiation-induced charge by unrelated N-wells, typically ones where PMOS transistors are integrated. The design of a sensor specifically tailored to a particle physics experiment is presented, where each 50 μm pixel has over 150 PMOS and NMOS transistors. …”
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    Monolithic Active Pixel Sensors (MAPS) in a Quadruple Well Technology for Nearly 100% Fill Factor and Full CMOS Pixels
  8. 3648
    “…In this study, we consider double independent gate, vertically stacked nanowire field effect transistors (FETs) with gate-all-around structures and typical diameter of 20 nm. …”
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    Nanowire systems: technology and design
  9. 3649
    “…The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. …”
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    Contact gating at GHz frequency in graphene
  10. 3650
    “…2D Dirac materials supported by nonmetallic substrates are of particular interest due to their significance for the realization of the quantum spin Hall effect and their application in field‐effect transistors. Here, monolayer germanene is successfully fabricated on semiconducting germanium film with the support of a Ag(111) substrate. …”
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    Dirac Signature in Germanene on Semiconducting Substrate
  11. 3651
    por Liu, Huan, Han, Genquan, Liu, Yan, Hao, Yue
    Publicado 2019
    “…This paper investigates the impacts of post metal annealing (PMA) and post deposition annealing (PDA) on the electrical performance of Ge p-type metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ZrO(2) dielectric. For the transistors without PDA, on-state current (I(ON)), subthreshold swing (SS), and capacitance equivalent thickness (CET) characteristics are improved with PMA temperature increasing from 350 to 500 °C. …”
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    High Mobility Ge pMOSFETs with ZrO(2) Dielectric: Impacts of Post Annealing
  12. 3652
    “…Ionic liquid-gated organic field-effect transistors (IL-gated OFETs) were successfully fabricated on the ATR prism. …”
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    Electronic excitation spectra of organic semiconductor/ionic liquid interface by electrochemical attenuated total reflectance spectroscopy
  13. 3653
    por Hoefflinger, Bernd
    Publicado 2012
    “…The chips in present-day cell phones already contain billions of sub-100-nanometer transistors. By 2020, however, we will see systems-on-chips with trillions of 10-nanometer transistors. …”
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    Chips 2020: a guide to the future of nanoelectronics
  14. 3654
    “…The resulting rectifying nature of the Gr/C60 interface could be exploited in organic hot electron transistors and vertical organic permeable-base transistors.…”
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    Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics
  15. 3655
    por Brice, Maximilien
    Publicado 2019
    “…The new solid-state amplifier system developed by CERN with the Thales Gérac company comprises 32 towers, in which 2560 RF modules, each containing four transistors, will be installed.…”
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    New solid-state amplifier system for the SPS accelerating cavities
  16. 3656
    “…Its radiation tolerance has been enhanced by designing all NMOS transistors in enclosed geometry and introducing guardrings wherever necessary. …”
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    Layout techniques to enhance the radiation tolerance of standard CMOS technologies demonstrated on a pixel detector readout chip
  17. 3657
    “…In this paper, nanosheet deformation during channel release has been investigated and discussed in Gate-All-Around (GAA) transistors. Structures with different source/drain size and stacked Si nanosheet lengths were designed and fabricated. …”
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    Impact of Stress and Dimension on Nanosheet Deformation during Channel Release of Gate-All-Around Device
  18. 3658
    “…We study how nitridation, applied to SiON gate layers, impacts the reliability of planar metal-oxide-semiconductor field effect transistors (MOSFETs) subjected to negative and positive bias temperature instability (N/PBTI) as well as hard breakdown (HBD) characteristics of these devices. …”
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    Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs
  19. 3659
    por Shinar, Ruth, Shinar, Joseph
    Publicado 2023
    “…OE devices such as organic LEDs, organic and hybrid perovskite-based photodetectors, and organic thin-film transistors, notably organic electrochemical transistors, are utilized in such sensing and (bio)medical applications. …”
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    Organic Electronics—Microfluidics/Lab on a Chip Integration in Analytical Applications
  20. 3660
    “…We proposed a simple one-step laser scribing fabrication method to integrate wafer-scale high-performance graphene-based in-plane transistors, photodetectors, and loudspeakers. The in-plane graphene transistors have a large on/off ratio up to 5.34. …”
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    Wafer-Scale Integration of Graphene-based Electronic, Optoelectronic and Electroacoustic Devices
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