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  1. 3721
    “…The magnetotransport properties are employed to probe the magnetic status of the channel both in pure and cobalt doped zinc oxide transistors. We find that it is widely possible to control the magnetic scattering rates by field effect. …”
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    Influence of free charge carrier density on the magnetic behavior of (Zn,Co)O thin film studied by Field Effect modulation of magnetotransport
  2. 3722
    “…Insulated-gate GaN-based transistors can fulfill the emerging demands for the future generation of highly efficient electronics for high-frequency, high-power and high-temperature applications. …”
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    Status of Aluminum Oxide Gate Dielectric Technology for Insulated-Gate GaN-Based Devices
  3. 3723
    “…Total ionizing dose (TID) effects, on individual transistors, are evaluated up to 30 Mrd. Single event upset (SEU) sensitivity has been measured on a SRAM with a proton beam.…”
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    TID and SEU performance of a commercial 013 $\mu$ m CMOS technology
  4. 3724
    por Papenkort, Franz
    Publicado 1990
    Libro
    Diagramas eléctricos de control y protección /
  5. 3725
    “…This book teaches the fundamentals of modern CMOS technology and covers equal treatment to both types of MOSFET transistors that make up computer circuits; power properties of logic circuits; physical and electrical properties of metals; introduction of timing circuit electronics and introduction of layout; real-world examples and problem sets.…”
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    CMOS digital integrated circuits: a first course
  6. 3726
    “…Based on a detailed study of the radiation tolerance of high-voltage transistors, 2 commercial CMOS technologies have been selected for the design of synchronous buck DCDC converter ASICs. …”
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    Development of custom radiation-tolerant DCDC converter ASICs
  7. 3727
    por Pereira, Nuno, Paulino, Nuno
    Publicado 2015
    “…This book focuses on the design of a 3rd Order CT-ΣΔM where the integrator stages of the filter are implemented with Bipolar-Junction Transistors (BJT) differential pairs. These circuits are fully analyzed and the design method is carefully explained. …”
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    Design and implementation of sigma delta modulators (ΣΔm) for class D audio amplifiers using differential pairs
  8. 3728
    “…A series of selenophene oligomers incorporating conjugated fluorinated phenylene units have been synthesised as potential semiconductor materials for organic field-effect transistors (OFETs). X-ray crystallography shows that the molecules are held in close proximity by several short intermolecular contacts, making them ideal candidates for OFET applications.…”
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    Hexyl-Substituted Oligoselenophenes with Central Tetrafluorophenylene Units: Synthesis, Characterisation and Application in Organic Field Effect Transistorsa
  9. 3729
    “…Here, we present a novel concept of electrode composed of a bilayer of tetratetracontane (TTC) and polycrystalline organic semiconductors (pc-OSC) covered by a metal layer. Field-effect transistors of single-crystal organic semiconductors with the new electrodes of M/pc-OSC/TTC (M: Ca or Au) show both highly efficient electron and hole injection. …”
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    Online Artículo Texto
    A new electrode design for ambipolar injection in organic semiconductors
  10. 3730
    “…Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. …”
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    Online Artículo Texto
    Van der Waals epitaxial growth and optoelectronics of large-scale WSe(2)/SnS(2) vertical bilayer p–n junctions
  11. 3731
    “…It can be widely used in catalysis, transistors, optoelectronics and integrated circuits. …”
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    Online Artículo Texto
    Research on the Factors Affecting the Growth of Large-Size Monolayer MoS(2) by APCVD
  12. 3732
    “…Our results demonstrate the excellent suitability of modulation spectroscopy to investigate charge transport in nanotube network transistors and highlight the importance of SWCNT network composition for their performance.…”
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    Online Artículo Texto
    Probing Mobile Charge Carriers in Semiconducting Carbon Nanotube Networks by Charge Modulation Spectroscopy
  13. 3733
    “…Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. …”
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    Breath figure–derived porous semiconducting films for organic electronics
  14. 3734
    “…N-type field-effect transistors with high electron mobility are fabricated and their electrical performances exhibit excellent air stability. …”
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    Online Artículo Texto
    A high mobility air-stable n-type organic small molecule semiconductor with high UV–visible-to-NIR photoresponse
  15. 3735
    “…In this work, we synthesized a molecularly encapsulated version of the naphthalene diimide bithiophene copolymer PNDIT2, which is among the most popular high charge mobility organic semiconductors in n-type field-effect transistors and non-fullerene acceptors in organic photovoltaic blends. …”
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    Effects of Molecular Encapsulation on the Photophysical and Charge Transport Properties of a Naphthalene Diimide Bithiophene Copolymer
  16. 3736
    por Han, Weihua, Wang, Zhiming
    Publicado 2013
    “…This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. …”
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    Toward quantum FinFET
  17. 3737
    “…For instance, modulation-doped heterojunctions are nowadays currently used to investigate the quantum Hall effect and to make very fast transistors. This book contains the lectures presented at this Winter School, showing in particular that many aspects of semiconductor heterojunctions and super­ lattices were treated, extending from the fabrication of these two-dimensional systems to their basic properties and applications in micro-and opto-electron­ ics. …”
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    Winter School Les Houches
  18. 3738
    por Kloukinas, Constantine
    Publicado 1997
    “…The results show a threshold voltage shift of -130mV for the NMOS transistors and -190mV for the PMOS transistors, after an irradiation dose of 1.3MRad. …”
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    Ανάπτυξη Ηλεκτρονικών Συστημάτων Λήψης Δεδομένων και Ελέγχου για ένα Πείραμα Συγκρουόμενων Δεσμών pp σε Ενέργεια Κέντρου Μάζας 14TeV (Πείραμα CMS στον Επιταχυντή LHC).
  19. 3739
    “…The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipation. …”
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    Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC
  20. 3740
    “…This review outlines the design strategies which aim to develop high performing n-type materials in the fields of organic thin film transistors (OTFT), organic electrochemical transistors (OECT) and organic thermoelectrics (OTE). …”
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    Online Artículo Texto
    n-Type organic semiconducting polymers: stability limitations, design considerations and applications
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