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361por Khan, Habibullah, Islam, Md. Monirul, Roya, Rajnin Imran, Azad, Sariha Noor, Alam, Mahbub“…In order to simulate the I-V characteristics of the transistor we used the non-equilibrium Green’s function (NEGF) formalism. …”
Publicado 2023
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362por Li, Qiang, Tan, Xingyi, Yang, Yongming, Xiong, Xiaoyong, Zhang, Teng, Weng, Zhulin“…Two-dimensional (2D) semiconductors are being considered as alternative channel materials as silicon-based field-effect transistors (FETs) have reached their scaling limits. …”
Publicado 2023
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363por Wang, Xuejun, Xia, Binbin, Hao, Zhuang, Kang, Hua, Liu, Wentao, Chen, Yiheng, Jiang, Qunfeng, Liu, Jingyuan, Gou, Jian, Dong, Baijun, Wee, Andrew Thye Shen, Liu, Yunqi, Wei, Dacheng“…We find an inter-electrochemical gating effect when operating DNA framework-constructed enzyme cascade nanoreactors on a transistor, enabling in situ closed-loop reaction monitoring and modulation electrically. …”
Publicado 2023
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364por Toral-Lopez, A., Marin, E. G., Pasadas, F., Ganeriwala, M. D., Ruiz, F. G., Jiménez, D., Godoy, A.“…We propose and analyze a split-gate graphene field-effect transistor, demonstrating its capability to perform as a dynamically tunable frequency multiplier. …”
Publicado 2023
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365“…These multifunctional bio-based synaptic field-effect transistors exhibit potential for enhanced parallel neuromorphic computing and robot vision technology.…”
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366“…[Image: see text] A nano vacuum tube which consists of a vacuum transistor and a nano vacuum chamber was demonstrated. …”
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367por Nguyen, Thi Thanh-Ha, Nguyen, Cong Minh, Huynh, Minh Anh, Vu, Hoang Huy, Nguyen, Tuan-Khoa, Nguyen, Nam-Trung“…Among various sensing techniques, field-effect transistor (FET)-based wearable biosensors attract increasing attention due to their advantages such as label-free detection, fast response, easy operation, and capability of integration. …”
Publicado 2023
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368por Choi, Chang-Young, Lee, Ji-Hoon, Koh, Jung-Hyuk, Ha, Jae-Geun, Koo, Sang-Mo, Kim, Sangsig“…We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. …”
Publicado 2010
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369“…We present a scheme for single-photon transistors based on the strong emitter-surface-plasmon interaction. …”
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370por Lai, Chao-Sung, Lue, Cheng-En, Yang, Chia-Ming, Dawgul, Marek, Pijanowska, Dorota G.Enlace del recurso
Publicado 2009
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371“…We report a high-performance graphene/Si field-effect transistor fabricated via rapid chemical vapor deposition. …”
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372por Engel, Michael, Steiner, Mathias, Lombardo, Antonio, Ferrari, Andrea C., Löhneysen, Hilbert v., Avouris, Phaedon, Krupke, Ralph“…Here we report the first monolithic integration of a graphene transistor and a planar, optical microcavity. We find that the microcavity-induced optical confinement controls the efficiency and spectral selection of photocurrent generation in the integrated graphene device. …”
Publicado 2012
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373“…We report an unusual case of a 65-year-old African man who self-inserted a broken transistor radio antenna into his urethra to serve as an improvised ‘itchstick’ to ease a bothersome itchy urethral condition. …”
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374por Tria, Scherrine, Jimison, Leslie H., Hama, Adel, Bongo, Manuelle, Owens, Róisín M.“…The effect of EGTA on barrier tissue was monitored by a novel label-free method based on an organic electrochemical transistor (OECT) integrated with living cells and validated against conventional methods for measuring barrier tissue integrity. …”
Publicado 2013
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375por Liu, Yian, Moura, Mateus S, Costa, Ademir J, de Almeida, Luiz Alberto L, Paranjape, Makarand, Fontana, Marcio“…Theoretical models are adapted to describe the hysteresis effects seen in the electrical characteristics of carbon nanotube field-effect transistors. The ballistic transport model describes the contributions of conduction energy sub-bands over carbon nanotube field-effect transistor drain current as a function of drain-source and gate-source voltages as well as other physical parameters of the device. …”
Publicado 2014
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376“…We theoretically demonstrate the phenomenon of phonon-induced transparency and show an optical transistor in the system. In addition, the significantly enhanced nonlinear effect of the probe laser is also investigated, and we further put forward a nonlinear optical mass sensing that may be immune to detection noises. …”
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377“…In this article, gas sensors based on semiconducting nanowire field-effect transistors (FETs) are comprehensively reviewed. Individual nanowires or nanowire network films are usually used as the active detecting channels. …”
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378“…A self-aligned vertical Bipolar Charge Plasma Transistor (V-BCPT) with a buried metal layer between undoped silicon and buried oxide of the silicon-on-insulator substrate, is reported in this paper. …”
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379por Kim, Joon-Seok, Liu, Yingnan, Zhu, Weinan, Kim, Seohee, Wu, Di, Tao, Li, Dodabalapur, Ananth, Lai, Keji, Akinwande, Deji“…Our months-long studies indicate that a double layer capping of Al(2)O(3) and hydrophobic fluoropolymer affords BP devices and transistors with indefinite air-stability for the first time, overcoming a critical material challenge for applied research and development.…”
Publicado 2015
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380por Gonzalez-Zalba, M. Fernando, Ciccarelli, Chiara, Zarbo, Liviu P., Irvine, Andrew C., Campion, Richard C., Gallagher, Bryan L., Jungwirth, Tomas, Ferguson, Andrew J., Wunderlich, Joerg“…We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. …”
Publicado 2015
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