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3841Air and temperature sensitivity of n-type polymer materials to meet and exceed the standard of N2200por Brixi, Samantha, Melville, Owen A., Mirka, Brendan, He, Yinghui, Hendsbee, Arthur D., Meng, Han, Li, Yuning, Lessard, Benoît H.“…To further the development of air stable and high mobility n-type organic semiconductors, N2200 was studied in organic thin film transistors alongside three N2200-based analogues as well as a recently developed polymer based on a (3E,7E)-3,7-bis(2-oxoindolin-3-ylidene)benzo[1,2-b:4,5-b′]difuran-2,6(3 H,7 H)-dione (IBDF) core. …”
Publicado 2020
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3842por Wang, Qinqin, Tang, Jian, Li, Xiaomei, Tian, Jinpeng, Liang, Jing, Li, Na, Ji, Depeng, Xian, Lede, Guo, Yutuo, Li, Lu, Zhang, Qinghua, Chu, Yanbang, Wei, Zheng, Zhao, Yanchong, Du, Luojun, Yu, Hua, Bai, Xuedong, Gu, Lin, Liu, Kaihui, Yang, Wei, Yang, Rong, Shi, Dongxia, Zhang, Guangyu“…So far, high-quality monolayer MoS(2) wafers have been available and various demonstrations from individual transistors to integrated circuits have also been shown. …”
Publicado 2022
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3843por Karagounis, M“…New technology features like the higher integration density for digital circuits, better radiation tolerance and Triple-Well transistors are used for optimization and the implementation of new concepts. …”
Publicado 2008
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3844“…It contains failure rate data on integrated circuits, discrete semiconductors (diodes, transistors, optoelectronic devices), resistors, capacitors, and inductors/transformers, all of which were obtained from the field usage of electronic components. …”
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3845“…The last chapter uses transistors -- the basic building blocks of every computer -- for lots of interesting experiments. …”
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3846“…It identifies the type, parallel or series, of the equivalent noise sources related to the input transistors, which is the important input for the further choice of the signal processing method. …”
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3847por Heijne, Erik H M“…Extended functionality with hundreds of transistors in each electronics cell can serve a variety of purposes. …”
Publicado 2003
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3848por Anelli, G, Campbell, M, Delmastro, M, Faccio, F, Floria, S, Giraldo, A, Heijne, Erik H M, Jarron, Pierre, Kloukinas, Kostas C, Marchioro, A, Moreira, P, Snoeys, W“…We discuss design issues related to the extensive use of Enclosed Layout Transistors (ELT's) and guard rings in deep submicron CMOS technologies in order to improve radiation tolerance of ASIC's designed for the LHC experiments (the Large Hadron Collider at present under construction at CERN). …”
Publicado 1999
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3849por De Canio, Francesco, Gaioni, Luigi, Manghisoni, Massimo, Ratti, Lodovico, Re, Valerio, Traversi, Gianluca“…This work is concerned with the design and characterization of an SLVS transmitter/receiver pair,to be used for I/O links in High Energy Physics applications. Core transistors with a powersupply of 1.2 V have been considered in the design in order to mitigate the TID effects, due tothe harsh radiation environment foreseen. …”
Publicado 2018
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3850“…In recent years, a variety of SiC-based DNA-sensing technologies have been reported, such as nanoparticles and quantum dots, nanowires, nanopillars, and nanowire-based field-effect-transistors, etc. This article aims to provide a review of SiC-based DNA sensing technologies, their functions, and testing results.…”
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3851“…Planar carbon-based electronic devices, including metal/semiconductor junctions, transistors and interconnects, can now be formed from patterned sheets of graphene. …”
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3852por Nayak, Pradipta K., Caraveo-Frescas, J. A., Wang, Zhenwei, Hedhili, M. N., Wang, Q. X., Alshareef, H. N.“…We report, for the first time, the use of a single step deposition of semiconductor channel layer to simultaneously achieve both n- and p-type transport in transparent oxide thin film transistors (TFTs). This effect is achieved by controlling the concentration of hydroxyl groups (OH-groups) in the underlying gate dielectrics. …”
Publicado 2014
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3853por Lee, Ya-Ju, Yao, Yung-Chi, Huang, Chun-Ying, Lin, Tai-Yuan, Cheng, Li-Lien, Liu, Ching-Yun, Wang, Mei-Tan, Hwang, Jung-Min“…In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. …”
Publicado 2014
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3854por Wilbers, Janine G. E., Xu, Bojian, Bobbert, Peter A., de Jong, Michel P., van der Wiel, Wilfred G.“…This work opens up the pathway towards nanoscale, ultrashort-channel organic transistors for high-frequency and high-current-density operation.…”
Publicado 2017
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3855“…Recent studies indicate that field-effect transistors and organic solar cells fabricated using narrow-bandgap regioregular polymers with translational symmetries in the direction of the backbone vector often outperform those containing analogous regiorandom polymers. …”
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3856“…This review deals with the correlation between morphology, structure and performance of organic electronic devices including thin film transistors and solar cells. In particular, we report on solution processed devices going into the role of the 3D supramolecular organization in determining their electronic properties. …”
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3857“…Lastly, we briefly introduce a new approach to sequencing using Gate All-Around (GAA) nanowire Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) that has significant implications for the field.…”
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3858“…A threshold-type memristor emulator based on negative differential resistance (NDR) characteristics is proposed, with the core part being the R-HBT network composed of transistors. The advantage of the NDR-based memristor emulator is the controllable threshold, where the state of the memristor can be changed by setting the control voltage, which makes the memristor circuit design more flexible. …”
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3859por Khodadadian, Amirreza, Parvizi, Maryam, Teshnehlab, Mohammad, Heitzinger, Clemens“…Silicon nanowire field-effect transistors are promising devices used to detect minute amounts of different biological species. …”
Publicado 2022
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3860por Roy, Biswadev, Knapp, Taylor, Miller, Corrine, Gadisa, Abay, Ade, Harald W., Wu, Marvin H.“…These materials are a) fluorinated 2-alkyl-benzol[d] [1–3]triazole (FTAZ), a high hole-mobility polymer used for transistors and photovoltaics, b) diketopyrrolopyrrole (DPP3T), an acceptor polymer used in field-effect transistors (FET), c) Y5(PffBT4T-2OD) film that possesses remarkable temperature controllable morphology, d) a neat conjugated polymer P3HT, Poly(3-(hexylthiophene-2,5diyl) film that is used in optoelectronic devices and as a conductive binder for Li-ion batteries, e) phenyl-C61-butyric acid methyl ester (PCBM) films and its soluble derivatives used as n-type organic semiconductors, and f) excitonic photovoltaic material 95%:5% donor-acceptor blend P3HT:PCBM produced by 2 different spin rates. …”
Publicado 2019
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