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  1. 3861
    “…METHODS: The pH-sensitive electrolyte-gated graphene field-effect transistors (EG-GFETs) were fabricated by patterning graphene ink and ultraviolet-cured dielectric onto 125 µm–thick polyimide substrate using a nanomaterials inkjet printer. …”
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    Inkjet-Printed Graphene Sensors for the Bedside Detection of Tear Film pH
  2. 3862
    “…This approach allows us to identify field effect transistors as having the fastest median response time, and as being the most sensitive, some achieving single-molecule detection. …”
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    Electronic and electrochemical viral detection for point-of-care use: A systematic review
  3. 3863
    “…This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. …”
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    Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors †
  4. 3864
    por CMS Collaboration
    Publicado 2022
    “…Every RadMon contains Radiation-sensitive Field Effect Transistors (RadFETs) and p-i-n diodes for estimation of the absorbed dose and 1MeV neutron equivalent (neq) fluence respectively. …”
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    Analysis of the Radiation Monitoring System's Initial Data from the GEM Detectors at the CMS Experiment
  5. 3865
    “…We investigate the use of source switching charge-pump architectures to minimize any voltage- or dose-dependent charge injection and address the limitations of enclosed layout transistors (ELTs) in the conventional drain switched charge-pump. …”
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    Source Switched Charge-Pump PLLs for High-Dose Radiation Environments
  6. 3866
    “…To validate the model, we employ foundry-quality n-channel transistors and a broad range of stress voltages  [Formula: see text].…”
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    Online Artículo Texto
    Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
  7. 3867
    “…Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. …”
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    A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position
  8. 3868
    “…The unified approach allows us to propose several uses for hybrid materials, beyond their traditionally posited applications, including gas sensing, photoelectrochemistry, and as hybrid transistors.…”
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    Electronic Structure Modulation of Metal–Organic Frameworks for Hybrid Devices
  9. 3869
    “…Quantum transport simulation reveals that the sub-10 nm single-gated SNM field effect transistors show excellent performance at zero temperature but such a performance is greatly degraded at room temperature.…”
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    Silicene nanomesh
  10. 3870
    “…When probed by the electrodes spaced by ~200 nm, they also exhibit interesting gate-modulated current similar to the multi-dot single electron transistors. These results reveal the formation of charge puddles due to the interplay of disorder and quantum interference at low temperatures.…”
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    Anderson Insulators in Self-Assembled Gold Nanoparticles Thin Films: Single Electron Hopping between Charge Puddles Originated from Disorder
  11. 3871
    “…Defect generation in oxide semiconductor thin-film transistors under high-voltage driving has not been studied in depth despite being a crucial bottleneck in the making of the integrated circuit utilized in an oxide semiconductor. …”
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    Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor
  12. 3872
    “…The temperature sensor is based on the temperature dependence of the I-V characteristics of bipolar transistors available in CMOS technology, while the illumination sensor is an integrated p-n junction photodiode. …”
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    A Monolithic Multisensor Microchip with Complete On-Chip RF Front-End
  13. 3873
    “…GaN has important potentials in white light-emitting diodes, blue lasers, and field effect transistors because of its super thermal stability and excellent optical properties, playing main roles in future lighting to reduce energy cost and sensors to resist radiations. …”
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    Free-Standing Self-Assemblies of Gallium Nitride Nanoparticles: A Review
  14. 3874
    “…With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. …”
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    Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices
  15. 3875
    por Beedasy, Vimanyu, Smith, Patrick J.
    Publicado 2020
    “…Inkjet printing has been used to produce a range of printed electronic devices, such as solar panels, sensors, and transistors. This article discusses inkjet printing and its employment in the field of printed electronics. …”
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    Printed Electronics as Prepared by Inkjet Printing
  16. 3876
    “…Here, we mainly review recent progress in the development of biocomposites in data storage, focusing on the application of biocomposites in resistive random-access memory (RRAM) and field effect transistors (FET) with their device structure, working mechanism, flexibility, transient characteristics. …”
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    Building memory devices from biocomposite electronic materials
  17. 3877
    “…Furthermore, TIP was used as a semiconductor in p‐channel thin‐film transistors (TFTs).…”
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    2,7,11,16‐Tetra‐tert‐Butyl Tetraindenopyrene Revisited by an “Inverse” Synthetic Approach
  18. 3878
    “…Benzothienobenzothiophene (BTBT) and its derivatives are known as some of the best performing compounds for organic field‐effect transistors. Here, the triptycene end‐capping concept is introduced to this class of compounds and polymorphic crystal structures are investigated to evaluate the potential of triptycene end‐caps as synthons for crystal engineering.…”
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    Triptycene End‐Capped Benzothienobenzothiophene and Naphthothienobenzothiophene
  19. 3879
    por Lee, Khwang-Sun, Park, Jun-Young
    Publicado 2022
    “…This paper proposes a simplified fabrication processing for nanosheet Field-Effect Transistors (FETs) part of beyond-3-nm node technology. …”
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    N-Type Nanosheet FETs without Ground Plane Region for Process Simplification
  20. 3880
    “…We also describe the fabrication process and performance evaluation of the ambipolar polymers-based organic transistors. For complete details on the use and execution of this protocol, please refer to Shen et al. (2022).…”
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    Protocol for rapid synthesis of high-performance ambipolar semiconducting polymers using an all-C–H-activation strategy
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