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3901por Kenarangi, Farid, Hu, Xuan, Liu, Yihan, Incorvia, Jean Anne C., Friedman, Joseph S., Partin-Vaisband, Inna“…Ambipolar carbon nanotube based field-effect transistors (AP-CNFETs) exhibit unique electrical characteristics, such as tri-state operation and bi-directionality, enabling systems with complex and reconfigurable computing. …”
Publicado 2020
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3902por Otsuka, Tomohiro, Abe, Takaya, Kitada, Takahito, Ito, Norikazu, Tanaka, Taketoshi, Nakahara, Ken“…We measure the electron transport in GaN/AlGaN field-effect transistors (FETs) at cryogenic temperature. We observe formation of quantum dots in the conduction channel near the depletion of the 2-dimensional electron gas (2DEG). …”
Publicado 2020
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3903“…Since their discovery 50 years ago, conjugated conducting polymers have received increasing attention owing to their unique conductive properties and potential applications in energy storage, sensors, coatings, and electronic devices such as organic field-effect transistors, photovoltaic cells, and light-emitting devices. …”
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3904“…Previous studies indicate that the threshold voltage mismatch between the paired transistors of a sense amplifier is the most critical factor. …”
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3905por Santiago-Frangos, Andrew, Nemudryi, Artem, Nemudraia, Anna, Wiegand, Tanner, Nichols, Joseph E., Krishna, Pushya, Scherffius, Andrew M., Zahl, Trevor R., Wilkinson, Royce A., Wiedenheft, Blake“…Here we briefly introduce the origins of PCR and isothermal amplification, before turning to the emergence of CRISPR-Cas and Argonaute proteins, which are being coupled to fluorimeters, spectrometers, microfluidic devices, field-effect transistors, and amperometric biosensors, for a new generation of nucleic acid-based diagnostics.…”
Publicado 2022
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3906“…[Image: see text] Single-walled carbon nanotubes (SWCNTs) are of particular interest as channel materials for field-effect transistors due to their unique structure and excellent properties. …”
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3907por Mauricio Ferre, J, Gascón, D, Vilasís Cardona, X, Picatoste Olloqui, E, Machefert, F, Lefrançois, J, Duarte, O“…To achieve the required radiation tolerance several techniques are applied: double guard rings between PMOS and NMOS transistors as well as glitch suppressors and TMR Registers. …”
Publicado 2013
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3908“…Coverage includes: Resistors, capacitors, inductors, and transformers Diodes, transistors, and integrated circuits Optoelectronics, solar cells, and phototransistors Sensors, GPS modules, and touch screens Op amps, regulators, and power supplies Digital electronics, LCD displays, and logic gates Microcontrollers and prototyping platforms, including Arduino DC motors, RC servos, and stepper motors Microphones, audio amps, and speakers Modular electronics and prototyping.…”
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3909por Kim, Dae Mann“…This introductory textbook covers fundamental quantum mechanics from an application perspective, considering optoelectronic devices, biological sensors and molecular imagers as well as solar cells and field effect transistors. The book provides a brief review of classical and statistical mechanics and electromagnetism, and then turns to the quantum treatment of atoms, molecules, and chemical bonds. …”
Publicado 2015
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3910por Carroll, E“…New press-pack technologies are introduced and the salient differences between Insulated Gate Bipolar Transistors (IGBTs) and Integrated Gate Commutated Thyristors (IGCTs) are compared. …”
Publicado 2006
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3911por Pernegger, Heinz“…The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.…”
Publicado 2016
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3912por Zou, Xiazhi, Yang, Jiayi, Qiao, Qifeng, Zou, Xinbo, Chen, Jiaxiang, Shi, Yang, Ren, Kailin“…Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency operations. …”
Publicado 2023
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3913por Praetorius, Florian, Leung, Philip J. Y., Tessmer, Maxx H., Broerman, Adam, Demakis, Cullen, Dishman, Acacia F., Pillai, Arvind, Idris, Abbas, Juergens, David, Dauparas, Justas, Li, Xinting, Levine, Paul M., Lamb, Mila, Ballard, Ryanne K., Gerben, Stacey R., Nguyen, Hannah, Kang, Alex, Sankaran, Banumathi, Bera, Asim K., Volkman, Brian F., Nivala, Jeff, Stoll, Stefan, Baker, David“…In nature, proteins that switch between two conformations in response to environmental stimuli structurally transduce biochemical information in a manner analogous to how transistors control information flow in computing devices. …”
Publicado 2023
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3914“…The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. …”
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3915por Ibrahim, Imad, Zhang, Yang, Popov, Alexey, Dunsch, Lothar, Büchner, Bernd, Cuniberti, Gianaurelio, Rümmeli, Mark H“…The systematic studies significantly advance our understanding of the growth of the all-carbon catalyst-free single-walled carbon nanotubes. Field-effect transistors were fabricated using the catalyst-free SWCNT and then electrically characterized, showing current capacity as high as the well-studied catalyst-assisted nanotubes.…”
Publicado 2013
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3916“…The competition between spin up electrons and spin down holes of the parallel spin configuration leads to peculiar behavior of colossal magnetoresistance and thermo-current, which is essential for the design of thermal transistors. These results are useful in future MoS(2)-based multifunctional spin caloritronic devices.…”
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3917“…The findings of this paper can have many potential applications including patterning the cell growth for biomedical applications and controlling the grain size in fabrication of polycrystalline silicon (poly-Si) thin-film transistors (TFTs).…”
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3918por Kim, Sun Dal, Lee, Byungyong, Byun, Taejoon, Chung, Im Sik, Park, Jongmin, Shin, Isaac, Ahn, Nam Young, Seo, Myungeun, Lee, Yunho, Kim, Yeonjoon, Kim, Woo Youn, Kwon, Hyukyun, Moon, Hanul, Yoo, Seunghyup, Kim, Sang Youl“…This novel polymer was successfully used as a substrate to fabricate transparent and flexible indium-gallium-zinc oxide thin-film transistors.…”
Publicado 2018
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3919por Cigáň, Marek, Danko, Peter, Brath, Henrich, Čakurda, Matúš, Fišera, Roman, Donovalová, Jana, Filo, Juraj, Weis, Martin, Jakabovič, Ján, Novota, Miroslav, Gáplovský, Anton“…Further, the effective mobility and electroluminescence of new α-carbolines were investigated in prepared organic field-effect transistors and organic light-emitting diodes, respectively.…”
Publicado 2019
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3920por Dreier, L. B., Liu, Z., Narita, A., van Zadel, M.-J., Müllen, K., Tielrooij, K.-J., Backus, E. H. G., Bonn, M.“…As graphene is an interesting material with multiple potential applications such as in transistors or sensors, we specifically investigate the graphene–water interface. …”
Publicado 2019
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