“…More importantly, the transistors based on as-grown GNM with neck widths of 65-75 nm have a near 3-fold higher mobility than those derived from etched GNM with the similar neck widths.…”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…We report the electronic recording of the touch contact and pressure using an active matrix pressure sensor array made of transparent zinc oxide thin-film transistors and tactile feedback display using an array of diaphragm actuators made of an interpenetrating polymer elastomer network. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Organic field-effect transistors (OFETs) were fabricated by depositing a regioregular poly(3-hexylthiophene) (P3HT) active layer using a dip-coating method. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…A H(+)- OH(−) junction with rectifying behaviour and H(+)-type and OH(−)-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H(+) and OH(−) to electron and hole transport in semiconductors. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…In addition, electrochemical doping is in the origin of the hysteresis effects often observed in graphene-based field effect transistors when operating in the atmospheric environment.…”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Strained germanium grown on silicon with nonstandard surface orientations like (011) or (111) is a promising material for various semiconductor applications, for example complementary metal-oxide semiconductor transistors. However, because of the large mismatch between the lattice constants of silicon and germanium, the growth of such systems is challenged by nucleation and propagation of threading and misfit dislocations that degrade the electrical properties. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Relentless efforts in semiconductor technology have driven nanometer-scale miniaturization of transistors, diodes, and interconnections in electronic chips. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The nature of the C-H bonds between graphene and H-terminated NDs strongly influences the electronic character of the heterostructure, creating effective charge redistribution within the system. Field effect transistors (FETs) have been fabricated based on this novel herterostructure to demonstrate device characteristics and the potential of this approach.…”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…The field of molecular electronics aims at using single molecules as functional building blocks for electronics components, such as switches, rectifiers or transistors. A key challenge is to perform measurements with atomistic control over the alignment of the molecule and its contacting electrodes. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…[Image: see text] Electrostatically tunable negative differential resistance (NDR) is demonstrated in monolithic metal–semiconductor–metal (Al–Ge–Al) nanowire (NW) heterostructures integrated in back-gated field-effect transistors (FETs). Unambiguous signatures of NDR even at room temperature are attributed to intervalley electron transfer. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Capacitance densities shift with different biases, indicating that the InN-based MIS structures can serve as potential candidates for MIS field-effect transistors.…”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…In this paper, we present a theoretical model that describes the degradation of carrier mobility by charged dislocations in quantum-confined III–V semiconductor metal oxide field effect transistors (MOSFETs). Based on the results, we conclude that in order for III–V compound MOSFETs to outperform silicon MOSFETs, Fermi level pinning in the channel should be eliminated for yielding carriers with high injection velocity.…”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…It is thus important to achieve a uniform thickness along the barrier to enhance, for example, the sensitivity and speed of single electron transistors based on the tunnel junctions. Here, we have observed that grooves at Al grain boundaries are associated with a local increase of tunnel barrier thickness. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…It is thus urgent to study the most promising candidates in realistic configurations, and here we present detailed multiscale simulations of field-effect transistors based on arsenene and antimonene monolayers as channels. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Nowadays, with the development of its exfoliation method, there are extensive applications of black phosphorus in transistors, batteries and optoelectronics. Though, because of its hardship in mass production and stability problems, the potential of the black phosphorus in various fields is left unexplored. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…Incorporation of active devices/media such as transistors for microwave and gain media for optics may be very attractive for enabling desired low loss and broadband metamaterials. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso

“…In addition, we will show our recent results focused on the development of new LC applications, such as programmable transistors, a transparent and active-type two-dimensional optical array and self-powered display systems based on LCs, and will briefly discuss their novel concepts and basic operating principles. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso