Materias dentro de su búsqueda.
Mostrando 4,001 - 4,020 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.14s Limitar resultados
  1. 4001
    “…Oxide materials with large dielectric constants (so-called high-k dielectrics) have attracted much attention due to their potential use as gate dielectrics in Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). A novel characterization (pulse capacitance-voltage) method was proposed in detail. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Hysteresis in Lanthanide Aluminum Oxides Observed by Fast Pulse CV Measurement
  2. 4002
    por Rubel, O.
    Publicado 2017
    “…Confinement of the electron gas along one of the spatial directions opens an avenue for studying fundamentals of quantum transport along the side of numerous practical electronic applications, with high-electron-mobility transistors being a prominent example. A heterojunction of two materials with dissimilar electronic polarisation can be used for engineering of the conducting channel. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    One-dimensional electron gas in strained lateral heterostructures of single layer materials
  3. 4003
    “…Herein, we successfully modulate the magnetic anisotropy of the entire region of the ferromagnetic layers in the elongated mesas of vertical spin field-effect transistors with widths as large as ~500 nm by applying an electric field to the side surface of the metallic GaMnAs-based mesas through an electric double layer. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Magnetic anisotropy control by applying an electric field to the side surface of ferromagnetic films
  4. 4004
    por Miyaji, Takashi, Nitta, Noriko
    Publicado 2017
    “…Nanoporous structures have a great potential for application in electronic and photonic materials, including field effect transistors, photonic crystals, and quantum dots. The control of size and shape is important for such applications. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Nanoporous Structure Formation on the Surface of InSb by Ion Beam Irradiation
  5. 4005
    “…Cooperativity enables shape memory effect in single crystals and function memory effect in thin film transistors. We establish a molecular design rule to trigger martensitic transition in organic semiconductors, showing promise for designing next-generation smart multifunctional materials.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Rotator side chains trigger cooperative transition for shape and function memory effect in organic semiconductors
  6. 4006
    “…Carbon nanotube field-effect transistors are used extensively in ultra-sensitive biomolecule sensing applications. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Regenerative, Highly-Sensitive, Non-Enzymatic Dopamine Sensor and Impact of Different Buffer Systems in Dopamine Sensing
  7. 4007
    por Manaka, Takaaki, Iwamoto, Mitsumasa
    Publicado 2016
    “…By analyzing EFISHG images of organic field-effect transistors, the in-plane two-dimensional distribution of the electric field in the channel can be evaluated. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Optical second-harmonic generation measurement for probing organic device operation
  8. 4008
    por Xiao, Xiao, Hoye, Thomas R.
    Publicado 2018
    “…These highly conjugated molecules often have interesting photonic and/or electronic properties that afford them the potential for application in a host of organoelectronic devices such as sensors, light emitting diodes, photovoltaic devices, and field-effect transistors. Here we show the development and use of the title (domino-HDDA) reaction to synthesize structurally diverse polyacenes from acyclic polyyne precursors. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    The domino hexadehydro-Diels–Alder reaction transforms polyynes to benzynes to naphthynes to anthracynes to tetracynes (and beyond?)
  9. 4009
    “…Moreover, the proposed method was performed to the spectral data collected from graphene and MoS(2) field-effect transistors devices. The calculation completed in less than 13.4 s per set and successfully detected systematic peak shifts of the C 1s in graphene and S 2p in MoS(2) peaks. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Spectrum adapted expectation-maximization algorithm for high-throughput peak shift analysis
  10. 4010
    “…The reduction in current ability accompanied by the hump phenomenon in oxide semiconductor thin-film transistors to which high DC voltages and AC drive voltages are applied has not been studied extensively, although it is a significant bottleneck in the manufacture of integrated circuits. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Analysis of the hump phenomenon and needle defect states formed by driving stress in the oxide semiconductor
  11. 4011
    “…Charge carrier transport in organic semiconductors is at the heart of many revolutionary technologies ranging from organic transistors, light-emitting diodes, flexible displays and photovoltaic cells. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Quantum localization and delocalization of charge carriers in organic semiconducting crystals
  12. 4012
    por Xu, Zhiwei, Byun, Sangjin
    Publicado 2020
    “…The chip was implemented in a standard 0.18 m 1P6M bulk CMOS process with general V(TH) transistors and the active die area was 0.432 mm(2). …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    A Poly Resistor Based Time Domain CMOS Temperature Sensor with 9b SAR and Fine Delay Line
  13. 4013
    por Bhattarai, Romakanta, Shen, Xiao
    Publicado 2020
    “…The effective mass of an electron is small among two-dimensional (2D) semiconductors, which is beneficial for applications such as field-effect transistors. The vibrational Raman and IR spectra are calculated to facilitate future experimental investigations.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Predicting a Novel Phase of 2D SiTe(2)
  14. 4014
    por MATSUNAMI, Hiroyuki
    Publicado 2020
    “…Big changes have occurred owing to the author’s inspirational idea in 1968 to “make transistors from unusual material”. The current paper starts by describing the history of SiC research involving fundamental studies by the author’s group: unique epitaxial crystal growth techniques, the physical characterization of grown layers and processes for device fabrication. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Fundamental research on semiconductor SiC and its applications to power electronics
  15. 4015
    “…In this feature article, the synthesis pathway of DPP-based materials and their applications in organic field-effect transistors, photovoltaic devices, sensors, two photo-absorption materials, and others are reviewed, and possible future applications are discussed. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Diketopyrrolopyrrole (DPP)-Based Materials and Its Applications: A Review
  16. 4016
    “…We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Conduction Band Edge Energy Profile Probed by Hall Offset Voltage in InGaZnO Thin Films
  17. 4017
    “…FFMPs can be prepared within a short time and may have the same electrical characteristics as other one-dimensional crystals, e.g., fullerene nanowhiskers, so they are expected to be very useful for field-effect transistors, organic photovoltaics, and so on in the near future.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Simple annealing process for producing unique one-dimensional fullerene crystal named fullerene finned-micropillar
  18. 4018
    “…Along with the rapid development of controllable, scalable, and programmed synthesis techniques of high-quality 2D heterostructures, various heterostructure devices with extraordinary performance have been designed and fabricated, including tunneling transistors, photodetectors, and spintronic devices. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Recent Progress in the Fabrication, Properties, and Devices of Heterostructures Based on 2D Materials
  19. 4019
    “…We investigated the sensing characteristics of NO(2) gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation
  20. 4020
    “…These materials have potential applications in high-performance transistors, biomedical systems, sensors, and solar cells. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Graphene-Based Nanocomposites: Synthesis, Mechanical Properties, and Characterizations
Herramientas de búsqueda: RSS