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  1. 4021
    “…In this work, a low-power plasma oxidation surface treatment followed by Al(2)O(3) gate dielectric deposition technique is adopted to improve device performance of the enhancement-mode (E-mode) AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) intended for applications at millimeter-wave frequencies. …”
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    Adoption of the Wet Surface Treatment Technique for the Improvement of Device Performance of Enhancement-Mode AlGaN/GaN MOSHEMTs for Millimeter-Wave Applications
  2. 4022
    “…Also, the potential applications of these molecules in organic light-emitting diodes, organic field-effect transistors, organic photovoltaics, organic memory devices, and logic circuits are discussed.…”
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    Hexaarylbenzene based high-performance p-channel molecules for electronic applications
  3. 4023
    “…Here, single-walled carbon nanotube transistors recorded the motions of Taq molecules processing matched or mismatched template–deoxynucleotide triphosphate pairs from 22° to 85°C. …”
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    Single-molecule Taq DNA polymerase dynamics
  4. 4024
    “…Improved field-effect mobility values are observed for the bottom-gate transistors fabricated by using the bilayer graphene channel, which indicates an improved crystallinity is obtained after the second CVD growth cycle. …”
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    Layered Graphene Growth Directly on Sapphire Substrates for Applications
  5. 4025
    por Seo, Juhyung, Yoo, Hocheon
    Publicado 2022
    “…This review revisits the ZTO films used for various device applications, including thin-film transistors, memory devices, solar cells, and sensors, focusing on their strong and weak points. …”
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    Zinc–Tin Oxide Film as an Earth-Abundant Material and Its Versatile Applications to Electronic and Energy Materials
  6. 4026
    por Zhao, Ying, Wang, Jiawei
    Publicado 2022
    “…The proposed model could interpret the experimental data on carrier concentration- and temperature-dependence of the Seebeck coefficient, including various kinds of conducting polymer film and small molecule based field-effect transistors (FETs). Compared with the conventional Mott’s VRH and mobility edge model, our model has a much better description of the relationship between the Seebeck coefficient and conductivity. …”
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    Variable Range Hopping Model Based on Gaussian Disordered Organic Semiconductor for Seebeck Effect in Thermoelectric Device
  7. 4027
    por Stecko, Sebastian, Gryko, Daniel T.
    Publicado 2022
    “…In this Perspective, we will discuss the recent progress of heteropentalenes’ usefulness as an active element of organic light-emitting diodes and organic field-effect transistors. Among the myriad of possible combinations for the different heteroatoms, thieno[3,2-b]thiophenes and 1,4-dihydropyrrolo[3,2-b]pyrroles are subject to the most intense studies. …”
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    Multifunctional Heteropentalenes: From Synthesis to Optoelectronic Applications
  8. 4028
    “…However, even though ETA can be used to improve the reliability of logic and memory devices, applying ETA in state-of-the-art field-effect transistors (FETs) such as nanosheet FETs (NS FETs) has not yet been demonstrated. …”
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    Vacuum Inner Spacer to Improve Annealing Effect during Electro-Thermal Annealing of Nanosheet FETs
  9. 4029
    “…In this work, visible-light-stimulated synaptic transistors based on CdSe quantum dot (CdSe QD)/amorphous In–Ga–Zn–O hybrid channels are proposed. …”
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    Visible-Light-Stimulated Synaptic Phototransistors Based on CdSe Quantum Dot/In–Ga–Zn–O Hybrid Channels
  10. 4030
    “…In this work, extremely thin silicon-on-insulator field effective transistors (ETSOI FETs) are fabricated with an ultra-thin 3 nm ferroelectric (FE) hafnium zirconium oxides (Hf(0.5)Z(r0.5)O(2)) layer. …”
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    Improved Subthreshold Characteristics by Back-Gate Coupling on Ferroelectric ETSOI FETs
  11. 4031
    “…Afterwards, the emerging applications of inorganic perovskite QDs in electronics, including transistors and memories, will be presented. Finally, this review will provide an outlook on potential strategies for advancing inorganic perovskite QD technologies. …”
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    Inorganic Halide Perovskite Quantum Dots: A Versatile Nanomaterial Platform for Electronic Applications
  12. 4032
    “…Herein, we review the state of such living electronic components including wires, capacitors, transistors, diodes, optoelectronic components, spin filters, sensors, logic processors, bioactuators, information storage media and methods for assembling these components into living electronic circuits.…”
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    Living electronics: A catalogue of engineered living electronic components
  13. 4033
    “…Several technologies are discussed, ranging from 3-D integration of devices (Phase Change Memories, Monolithic 3-D, Vertical NanoWires-based transistors) to dense 2-D arrangements (Double-Gate Carbon Nanotubes, Sublithographic Nanowires, Lithographic Crossbar arrangements). …”
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    Disruptive Logic Architectures and Technologies: From Device to System Level
  14. 4034
    “…An output stage, consisting of an AB class push-pull using only NPN transistors is also described. Laboratory and beam test results are given. (5 refs).…”
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    The mixed analog/digital shaper of the LHCb preshower
  15. 4035
    “…The implications on the DC performance of n and p channel transistors are presented. For small size devices, a strong performance degradation is observed from a dose of 100 Mrad. …”
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    1-Grad total dose evaluation of 65 nm CMOS technology for the HL-LHC upgrades
  16. 4036
    “…The performance of integrated DC/DC converters is affected by substrate parasitic devices, such as bipolar transistors and thyristors: these devices cause enhanced substrate noise that can lead to the malfunctioning of the control circuitry, they degrade the efficiency, and thyristors can even cause the failure of the converter by latch-up. …”
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    Substrate-currents-aware characterization of an integrated buck DC/DC converter for floor-plan optimization
  17. 4037
    “…Various complex devices are considered, such as sensors, photodetectors, light-emitting diodes (LEDs), storage applications, and field-effect transistors (FETs). This review of recent discoveries in TiO(2)-based optoelectronic devices, along with summary reviews and predictions, has important implications for the development of transitional metal oxides in optoelectronic applications for researchers.…”
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    A Review on the Progress of Optoelectronic Devices Based on TiO(2) Thin Films and Nanomaterials
  18. 4038
    “…We investigated the hydrogen gas sensors based on AlGaN/GaN high electron mobility transistors (HEMTs) for high temperature sensing operation. …”
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    High Selectivity Hydrogen Gas Sensor Based on WO(3)/Pd-AlGaN/GaN HEMTs
  19. 4039
    “…[Image: see text] In contrast to silicon-based transistors, single-molecule junctions can be gated by simple mechanical means. …”
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    Structural Regulation of Mechanical Gating in Molecular Junctions
  20. 4040
    “…Moreover, the integration with transistors or complementary metal-oxide-semiconductor circuits are necessary to control and drive the micro-LED display system. …”
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    Integration Technology of Micro-LED for Next-Generation Display
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