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4141por Greco, Giuseppe, Giannazzo, Filippo, Frazzetto, Alessia, Raineri, Vito, Roccaforte, Fabrizio“…The effects of near-surface processing on the properties of AlGaN/GaN heterostructures were studied, combining conventional electrical characterization on high-electron mobility transistors (HEMTs), with advanced characterization techniques with nanometer scale resolution, i.e., transmission electron microscopy, atomic force microscopy (AFM) and conductive atomic force microscopy (C-AFM). …”
Publicado 2011
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4142“…Here we show that solid-state nanopores can be combined with silicon nanowire field-effect transistors (FETs) to create sensors in which detection is localised and self-aligned at the nanopore. …”
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4143“…The structural analysis of crystal defects in organic thin films provides fundamental insights into their electronic properties for applications such as field effect transistors. Observation of crystal defects in organic thin films has previously been performed at rather low resolution by conventional transmission electron microscopy based on phase-contrast imaging. …”
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4144por Anderson, Travis, Ren, Fan, Pearton, Stephen, Kang, Byoung Sam, Wang, Hung-Ta, Chang, Chih-Yang, Lin, Jenshan“…In this paper, we review our recent results in developing gas sensors for hydrogen using various device structures, including ZnO nanowires and GaN High Electron Mobility Transistors (HEMTs). ZnO nanowires are particularly interesting because they have a large surface area to volume ratio, which will improve sensitivity, and because they operate at low current levels, will have low power requirements in a sensor module. …”
Publicado 2009
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4145por Song, H. S., Li, S. L., Miyazaki, H., Sato, S., Hayashi, K., Yamada, A., Yokoyama, N., Tsukagoshi, K.“…Electron microscopies characterized the presence of grain boundaries and indicated the polycrystalline nature of the CVD-G. Field-effect transistors based on CVD-G without the grain boundary obtained a transport mobility comparative to that of Kish graphene, which directly indicated the detrimental effect of grain boundaries. …”
Publicado 2012
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4146por Docherty, Callum J., Lin, Cheng-Te, Joyce, Hannah J., Nicholas, Robin J., Herz, Laura M., Li, Lain-Jong, Johnston, Michael B.“…Now graphene is finding application in touch-screen displays, as channels in high-frequency transistors and in graphene-based integrated circuits. …”
Publicado 2012
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4147por Choi, D. H., Wang, Q., Azuma, Y., Majima, Y., Warner, J. H., Miyata, Y., Shinohara, H., Kitaura, R.“…Graphene nanoribbons (GNR) are one of the most promising candidates for the fabrication of graphene-based nanoelectronic devices such as high mobility field effect transistors (FET). Here, we report a high-yield fabrication of a high quality another type of GNR analogue, fully flattened carbon nanotubes (flattened CNTs), using solution-phase extraction of inner tubes from large-diameter multi-wall CNTs (MWCNTs). …”
Publicado 2013
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4148“…Its threshold temperature T(th) can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. …”
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4149por Kwon, Jinhyeong, Hong, Sukjoon, Lee, Habeom, Yeo, Junyeob, Lee, Seung S, Ko, Seung Hwan“…As a proof of concept of the proposed method, ZnO nanowire network-based field effect transistors and ultraviolet photo-detectors were demonstrated by direct patterned grown ZnO nanowires as active layer.…”
Publicado 2013
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4150“…Fused nanocrystalline thin films (grain size = 4.5–5.5 nm) on thermally grown silicon dioxide gate dielectrics produce field-effect transistors with electron mobilities as high as 25 cm(2)/(Vs) and on/off ratios of 10(5) with less than 0.5 V hysteresis in threshold voltage without the addition of indium.…”
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4151por Głowacki, Eric Daniel, Coskun, Halime, Blood-Forsythe, Martin A., Monkowius, Uwe, Leonat, Lucia, Grzybowski, Marek, Gryko, Daniel, White, Matthew Schuette, Aspuru-Guzik, Alán, Sariciftci, Niyazi Serdar“…Herein we report on the performance of three archetypical H-bonded DPP pigments, which show ambipolar carrier mobilities in the range 0.01–0.06 cm(2)/V s in organic field-effect transistors. Their semiconducting properties are correlated with crystal structure, where an H-bonded crystal lattice supports close and relatively cofacial π–π stacking. …”
Publicado 2014
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4152por Yun, Hoyeol, Kim, Sangwook, Kim, Hakseong, Lee, Junghyun, McAllister, Kirstie, Kim, Junhyung, Pyo, Sengmoon, Sung Kim, Jun, Campbell, Eleanor E. B., Hyoung Lee, Wi, Wook Lee, Sang“…Arrays of pentacene field effect transistors (FETs) with various channel lengths from 50 μm down to 500 nm were successfully produced from the same batch using this technique. …”
Publicado 2015
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4153por Li, Yunze, Ji, Deyang, Liu, Jie, Yao, Yifan, Fu, Xiaolong, Zhu, Weigang, Xu, Chunhui, Dong, Huanli, Li, Jingze, Hu, Wenping“…Based on these single crystal arrays, the organic field effect transistors exhibit the superior performance with the average mobility extracting from the saturation region of 0.2 cm(2) V(−1)s(−1) (the highest 0.47 cm(2) V(−1)s(−1)) and on/off ratio exceeding 10(5). …”
Publicado 2015
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4154por Chen, Xuechen, Liu, Huiqiang, Li, Qiuguo, Chen, Hao, Peng, Rufang, Chu, Sheng, Cheng, Binbin“…The InN nanostructures (nanowires and nano-necklaces) were achieved by chemical vapor deposition growth, and then InN nanowires were successfully transferred and aligned into micrometer-sized groups by a “transfer-printing” method. Field effect transistors on aligned nanowires were fabricated and tested for terahertz detection purpose. …”
Publicado 2015
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4155por Moraru, Daniel, Samanta, Arup, Tyszka, Krzysztof, Anh, Le The, Muruganathan, Manoharan, Mizuno, Takeshi, Jablonski, Ryszard, Mizuta, Hiroshi, Tabe, Michiharu“…One pathway to observe and characterize such fundamental operation is to focus on identifying isolated or coupled dopants in nanoscale silicon transistors, the building blocks of present electronics. …”
Publicado 2015
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4156por Javadi, A., Söllner, I., Arcari, M., Hansen, S. Lindskov, Midolo, L., Mahmoodian, S., Kiršanskė, G, Pregnolato, T., Lee, E. H., Song, J. D., Stobbe, S., Lodahl, P.“…The quantum non-linearity will find immediate applications for deterministic Bell-state measurements and single-photon transistors and paves the way to scalable waveguide-based photonic quantum-computing architectures.…”
Publicado 2015
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4157“…Our analysis provides an insight on the skyrmion dynamics and manipulation that is critical for the realization of skyrmion-based transistors and low-power memory.…”
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4158por Osofsky, M. S., Krowne, C. M., Charipar, K. M., Bussmann, K., Chervin, C. N., Pala, I. R., Rolison, D. R.“…The discovery of low-dimensional metallic systems such as high-mobility metal oxide field-effect transistors, the cuprate superconductors, and conducting oxide interfaces (e.g., LaAlO(3)/SrTiO(3)) has stimulated research into the nature of electronic transport in two-dimensional systems given that the seminal theory for transport in disordered metals predicts that the metallic state cannot exist in two dimensions (2D). …”
Publicado 2016
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4159por Nádvorník, L., Němec, P., Janda, T., Olejník, K., Novák, V., Skoromets, V., Němec, H., Kužel, P., Trojánek, F., Jungwirth, T., Wunderlich, J.“…Spin-valves or spin-transistors in magnetic memories and logic elements are examples of structures whose functionality depends crucially on the length and time-scales at which spin-information is transferred through the device. …”
Publicado 2016
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4160“…Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. …”
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