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  1. 4241
    “…The findings evidence that the brain MTs are electrical oscillators that behave as "ionic-based" transistors to generate, propagate, and amplify electrical signals.…”
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    The electrical properties of isolated microtubules
  2. 4242
    “…The applications of tellurium nanostructures in electronics and optoelectronics, including field-effect transistors, photodetectors, and sensors, are highlighted. …”
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    Progress in the Synthesis and Application of Tellurium Nanomaterials
  3. 4243
    “…One [4,2]peri-acenoacene derivative was doubly reduced using cesium and the crystal structure of the resulting salt has been obtained. Field-effect transistors showing a temperature-dependent hole mobility have been tested.…”
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    Dibenzannulated peri-acenoacenes from anthanthrene derivatives
  4. 4244
    “…It is also difficult for image processors based on complementary metal–oxide–semiconductor (CMOS) transistors to continuously increase the integration density, causing by their underlying physical restriction and economic costs. …”
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    Digital image processing realized by memristor-based technologies
  5. 4245
    “…It has also been compared with Dual Interlocked Storage Elements (DICEs), and it saves the area cost of six transistors compared to the DICE structure. Under the same operating conditions, the average power consumption and peak power consumption are, respectively, 9.8% and 18.8% lower than those of the DICE circuit, making it suitable for soft radiation environments where high circuit speed is not a critical requirement.…”
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    SEU Hardened D Flip-Flop Design with Low Area Overhead
  6. 4246
    “…We further show that the out-of-plane ferroelectricity can be predicted with a crystallographic tolerance factor, and we use these insights to design a room-temperature multiferroic with strong magnetoelectric coupling suitable for magneto-electric spin-orbit transistors.…”
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    Out-of-plane ferroelectricity and robust magnetoelectricity in quasi-two-dimensional materials
  7. 4247
    “…This is important for domain-wall nanoelectronics, as such in-wall junctions will neither act as diodes nor facilitate transistors in the same way as extrinsic semiconducting systems do.…”
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    Ferroelectric Domain Wall p–n Junctions
  8. 4248
    “…[Image: see text] Photochromes are photoswitchable, bistable chromophores which, like transistors, can implement binary logic operations. …”
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    All-Photonic Multifunctional Molecular Logic Device
  9. 4249
    “…GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. …”
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    Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
  10. 4250
    “…Synthetic and electrical characterization of the compound is reported with single-crystal field-effect transistors, showing a remarkable saturation and linear mobility of 12.3 and 16 cm(2) V(−1) s(−1), respectively. …”
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    From computational discovery to experimental characterization of a high hole mobility organic crystal
  11. 4251
    “…Recent studies have indeed demonstrated the promise of 2D MoS(2) in fields including field effect transistors, low power switches, optoelectronics, and spintronics. …”
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    Controlled Scalable Synthesis of Uniform, High-Quality Monolayer and Few-layer MoS(2 )Films
  12. 4252
    “…Recent reports on high-mobility organic field-effect transistors (FETs) based on donor-acceptor semiconducting co-polymers have indicated an apparently strong deviation from the paradigm, valid for a series of semi-crystalline polymers, which has been strictly correlating charges mobility to crystalline order. …”
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    Control of charge transport in a semiconducting copolymer by solvent-induced long-range order
  13. 4253
    “…AlGaN/GaN high electron mobility transistors (HEMTs) show a strong dependence of source/drain current on the piezoelectric polarization -induced two dimensional electron gas (2DEG). …”
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    Wide Bandgap Semiconductor Nanorod and Thin Film Gas Sensors
  14. 4254
    “…Here, we report graphene-based field-effect transistors combined with supported lipid bilayers as a platform for measuring, for the first time, individual ion channel activity. …”
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    Charging the Quantum Capacitance of Graphene with a Single Biological Ion Channel
  15. 4255
    “…This study examined the correlation between the off-state leakage current and dynamic on-resistance (R(ON)) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. …”
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    Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs
  16. 4256
    “…The unique characteristics of these biomolecular transduction systems has been utilized in applications ranging from solar cells and single-electron transistors (SETs) to fluorescent sensors capable of sensitive and selective detection of a wide variety of targets, both organic and inorganic. …”
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    Recent Advances in the Field of Bionanotechnology: An Insight into Optoelectric Bacteriorhodopsin, Quantum Dots, and Noble Metal Nanoclusters
  17. 4257
    “…Here, we employ scanning photocurrent microscopy to identify the nature of photocurrent generated in multilayer MoS(2) transistors. The generation and transport of photocurrent in multilayer MoS(2) are found to differ from those in other low-dimensional materials that only contribute with either photovoltaic effect (PVE) or photothermoelectric effect (PTE). …”
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    Photothermoelectric and photovoltaic effects both present in MoS(2)
  18. 4258
    “…With the increase of transistors' density, popularity of System on Chip (SoC) has increased exponentially. …”
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    Designing Area Optimized Application-Specific Network-On-Chip Architectures while Providing Hard QoS Guarantees
  19. 4259
    “…A three-stage rectifier adopts a chain of auxiliary floating rectifier cells to boost the gate voltage of the switching transistors, resulting in a power conversion efficiency of 53% at the low input power of −20 dBm. …”
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    A CMOS Pressure Sensor Tag Chip for Passive Wireless Applications
  20. 4260
    “…This molecule is of large interest for the fabrication of high-performance and air-stable n-type organic field-effect transistors. Low-bias experiments performed on mechanically controllable break junctions reveal the presence of two different values of the single-molecule conductance, which differ by about two orders of magnitudes. …”
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    Single-Molecule Break Junctions Based on a Perylene-Diimide Cyano-Functionalized (PDI8-CN(2)) Derivative
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