“…Moreover, the respective field effect transistors made of PDPP3T‐1 can be utilized for sensing ethanol vapor with high sensitivity (down to 100 ppb) and good selectivity.…”
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“…The fabricated thin-film transistors retain their electrical performances by more than 55% upon 50% stretching and exhibit one of the highest P3HT-based field-effect mobilities of 1.4 cm(2)/V∙s, owing to crystallinity improvement. …”
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“…This principle is employed for the manufacturing of devices ranging from high-performance transistors to solid-state lasers. Traditionally, strain is typically achieved via growth on lattice-mismatched substrates. …”
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“…Here, we demonstrate field-effect transistors based on the coupling of a magnetic molecule quinoidal dithienyl perylenequinodimethane (QDTP) to 2D materials. …”
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“…We outline a modified figure of merit reducing thickness-dependent errors, as well as how modern ab initio screening methods can be used to augment experimental methods to assess new materials for potential applications as p-type TCOs, p-channel transparent thin film transistors, and selective contacts in solar cells.…”
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“…As a result of the formation of a van der Waals interface, the I(ON)/I(OFF) in back-gated MoS(2) transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. …”
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“…Micro‐MOSFETs (metal oxide semiconductor field effect transistors) were used to measure skin dose for a range of irradiation conditions (open fields, physical wedges, dynamic wedges, various source‐to‐surface distances) for 6‐MV and 10‐MV beams, and the results were compared with the calculated mean dose to a “skin” structure 2 mm thick for semi‐cylindrical phantoms (representative of a neck or breast). …”
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“…The ability to electrically control nonlinear optical signals in nanostructures can enable optoelectronic devices such as optical transistors and modulators for on-chip integrated photonics.…”
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“…Our polymers with a high electron affinity display long wavelength NIR absorption with air stable electron transport in solution processed organic thin film transistors.…”
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“…It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. …”
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“…However, for a suitable integration in active devices such as p-n junctions, transistors or optoelectronic devices, the electronic properties must be efficiently tailored. …”
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“…The ever-increasing demand for flexible electronics calls for the development of low-voltage and high-mobility organic thin-film transistors (OTFTs) that can be integrated into emerging display and labeling technologies. …”
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“…We fabricated nanowires of a conjugated oligomer and applied them to organic field-effect transistors (OFETs). The supramolecular assemblies of a thienoisoindigo-based small molecular organic semiconductor (TIIG-Bz) were prepared by co-precipitation with 2-bromobenzaldehyde (2-BBA) via a combination of halogen bonding (XB) between the bromide in 2-BBA and electron-donor groups in TIIG-Bz, and chalcogen bonding (CB) between the aldehyde in 2-BBA and sulfur in TIIG-Bz. …”
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“…Graphene etch stops enable one-step patterning of sophisticated devices from heterostructures by accessing buried layers and forming one-dimensional contacts. Graphene transistors with fluorinated graphene contacts show a room temperature mobility of 40,000 cm(2) V(−1) s(−1) at carrier density of 4 × 10(12) cm(−2) and contact resistivity of 80 Ω·μm. …”
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“…However, implementation of the machine learning algorithm consumes a huge number of transistors or memory devices on-chip. Developing a machine learning capability in a single device has so far remained elusive. …”
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“…The effect brought by the I–V kink effect on large signal performance of AlGaN/GaN high electron mobility transistors (HEMTs) was investigated in this paper. …”
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“…Naphtho[2,3-b:6,7-b′]dithiophene-4,5,9,10-tetracarboxylic diimide (NDTI) is a promising electron-deficient building block for n-type organic conductors, and the performance of NDTI-based field-effect transistors (FETs) is largely dependent on the substituents that alter the supramolecular organization in the solid state and, in turn, the intermolecular orbital overlap. …”
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“…Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. …”
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“…Tunneling Field-Effect Transistors (TFET) are one of the most promising candidates for future low-power CMOS applications including mobile and Internet of Things (IoT) products. …”
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“…The deep impurity was implemented by tunnel field-effect transistors (TFETs) instead of conventional FETs. With further improvement in fabrication and controllability, this work presents the possibility of operating silicon spin qubits at elevated temperatures.…”
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