“…Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field‐effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. …”
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“…We presented an explicit empirical model of the thermal resistance of AlGaN/GaN high-electron-mobility transistors on three distinct substrates, including sapphire, SiC, and Si. …”
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“…By fabricating 3 R MoS(2) of various thicknesses into dual-gate field-effect transistors, we obtain anomalous intermediate polarization states in multilayer (more than bilayer) 3 R MoS(2). …”
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“…Particularly, electrochemical biosensor-based live-cell detection technologies, such as electric cell–substrate impedance (ECIS), field-effect transistors (FETs), and potentiometric-based biosensors, are used for the electrochemical-based sensing of extracellular changes, genetic alterations, and redox reactions. …”
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“…Finally, we tested the proposed light‐responsive oligothiophenes in field‐effect transistors to probe the photo‐induced tuning of their electronic properties.…”
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“…QDs/polymer hybrids have implications in sensors, photonics, transistors, pharmaceutical transport, and other domains. …”
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“…For example, the instability of GeO(x) at device junctions causes electronic defect levels that degrade the performance of Ge-containing devices (e.g., transistors and infrared detectors). Therefore, the passivating Si layers have been commonly used at Ge interfaces to reduce the effects of Ge oxide instability and mimic the successful strategy of Si oxidation. …”
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“…Two-dimensional materials-based field-effect transistors (FETs) are promising biosensors because of their outstanding electrical properties, tunable band gap, high specific surface area, label-free detection, and potential miniaturization for portable diagnostic products. …”
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“…Electronics engineering is an engineering discipline where non-linear and active electrical components such as electron tubes, and semiconductor devices, especially transistors, diodes and integrated circuits, are utilized to design electronic circuits, devices and systems, typically also including passive electrical components and based on printed circuit boards. …”
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“…Coverage also includes additional advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, carbon-based nanostructures and transparent conductive oxides. …”
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“…It occupies a silicon area of 168 mm$^2$ and contains 421 millions transistors. The AM06 can perform bitwise comparison at a rate of 100 kHz. …”
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“…The chip silicon area is 168 mm2; it contains 421 millions of transistors and it stores 217 patterns. Moreover, the associative memory is suitable also for other interdisciplinary appli- cations (i.e., general purpose image filtering and analysis). …”
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“…Packaging has provided the necessary external wiring and interconnection capability for transistors and integrated circuits while they have gone through their own spectacular revolution from discrete device to gigascale integration. …”
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“…Topics include: The basic mathematical techniques needed for the study of the materials of nanophotonic technology; photonic crystals and their applications as laser resonators, waveguides, and circuits of waveguides; the application of photonic crystals technology in the design of optical diodes and transistors; the basic properties needed for the design and understanding of new types of engineered materials known as metamaterials; and a consideration of how and why these engineered materials have been formulated in the lab, as well as their applications as negative refractive index materials, as perfect lens, as cloaking devices, and their effects on Cherenkov and other types of radiation. …”
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“…The third part of the Handbook contains chapters on the state of the art in device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics and other topics such as spin caloritronics.   …”
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“…This textbook also covers advanced topics, such as Bragg mirrors, resonators, polarized and magnetic semiconductors, nanowires, quantum dots, multi-junction solar cells, thin film transistors, and transparent conductive oxides. The 4th edition includes many updates and chapters on 2D materials and aspects of topology. …”
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“…ITkPix consists of more than one billion transistors with a high triplication ratio in order to cope with the high particle and therefore radiation density at the heart of ATLAS. …”
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“…This thesis outlines, after a theoretical introduction into the fields of radiation effects on metal oxide semiconductor field effect transistors, an overview on results of an experimental study with this 0.13μm complementary metal oxide semiconductor technology. …”
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“…The radiation response of complementary metal- oxide-semiconductor (CMOS) gate oxides is typically insensitive to true dose-rate effects, but damage in deep-sub-micrometer technologies is dominated by ionization mechanisms in thick isolation oxides surrounding the transistors. Recent results in 65-nm FETs demonstrated that performance degradation in ultrahigh total ionizing dose (TID) experiments is due to defects in the isolation shallow trench isolation oxide or in the materials composing the lightly doped drain spacers. …”
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“…This achievement in the 130 nm technology opens the way to using the high-speed digital cells offered by this technology in conjunction with the low-leakage transistors to design a high-speed accurate current measurement system.…”
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