Mostrando 421 - 440 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.20s Limitar resultados
  1. 421
  2. 422
    “…In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. …”
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  3. 423
    “…Our spray-on method exhibited a throughput of 28 transistors in under five minutes on the same graphene sample, with a 96% yield for all devices down to a channel length of 50 μm. …”
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  4. 424
    “…Fully printed and flexible inorganic electrolyte gated transistors (EGTs) on paper with a channel layer based on an interconnected zinc oxide (ZnO) nanoparticle matrix are reported in this work. …”
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  5. 425
    “…For newly developed semiconductors, obtaining high‐performance transistors and identifying carrier mobility have been hot and important issues. …”
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  6. 426
    “…However, such materials are challenging to process using traditional microelectronics techniques. Here, stretchable transistor arrays are patterned exclusively from solution by inkjet printing of polymers and carbon nanotubes. …”
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  7. 427
    por de Ponte, M. A., Santos, Alan C.
    Publicado 2019
    “…In this article, we present a quantum transistor model based on a network of coupled quantum oscillators destined to quantum information processing tasks in linear optics. …”
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  8. 428
    por Wan, Yue-Min, Lin, Heng-Tien
    Publicado 2019
    “…Study on single electron tunnel using current-voltage characteristics in nanopillar transistors at 298 K show that the mapping between the N(th) electron excited in the central box ∼8.5 × 8.5 × 3 nm(3) and the N(th) tunnel peak is not in the one-to-one correspondence to suggest that the total number N of electrons is not the best quantum number for characterizing the quality of single electron tunnel in a three-dimensional quantum box transistor. …”
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  9. 429
    “…By exploiting the interfacial effects between MoS(2) and AlOx, we demonstrate that an h-BN-encapsulated MoS(2) artificial synapse transistor can mimic the basic synaptic behaviors, including EPSC, PPF, LTP, and LTD. …”
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  10. 430
    “…Atomically thin 2D van der Waals semiconductors are promising candidates for next‐generation nanoscale field‐effect transistors (FETs). Although large‐area 2D van der Waals materials have been successfully synthesized, such nanometer‐length‐scale devices have not been well demonstrated in 2D van der Waals semiconductors. …”
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  11. 431
    por Vu, Cao-An, Chen, Wen-Yih
    Publicado 2020
    “…The outburst of field-effect transistors provides a label-free detection and ultra-sensitive technique with significantly improved results in terms of detection of substances. …”
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  12. 432
    por Choi, Woo Young
    Publicado 2020
    “…This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on–off transition steeper without causing hysteresis effects. …”
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  13. 433
    “…To amplify local EET signals, a miniaturized bioelectronic device, the so‐called organic microbial electrochemical transistor (OMECT), is developed, which includes Shewanella oneidensis MR‐1 integrated onto organic electrochemical transistors comprising poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) combined with poly(vinyl alcohol) (PVA). …”
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  14. 434
    “…In this manuscript, we present experimental evidence of the memristive properties of a nanopatterned ferroelectric graphene field-effect transistor (FET). The graphene FET has, as a channel, a graphene monolayer transferred onto an HfO(2)-based ferroelectric material, the channel being nanopatterned with an array of holes with a diameter of 20 nm.…”
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  15. 435
    “…The main advantage of organic transistors with dual gates/bases is that the threshold voltages can be set as a function of the applied second gate/base bias, which is crucial for the application in logic gates and integrated circuits. …”
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  16. 436
    “…Research on organic light-emitting diodes, organic photovoltaics, and organic thin-film transistors is already in an advanced stage, and the derived devices are commercially available. …”
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  17. 437
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  19. 439
    “…Liquid-gated Graphene Field-Effect Transistors (GFET) are ultrasensitive bio-detection platforms carrying out the graphene’s exceptional intrinsic functionalities. …”
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  20. 440
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