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4381“…Recent developments in dosimetry, including metal oxide semiconductor field effect transistors (MOSFET) and the availability of anthropomorphic, tissue-equivalent phantoms have provided new opportunities for dosimetric assessments. …”
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4382
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4383Synthesis, crystal structure and charge transport characteristics of stable peri-tetracene analogues“…Therefore, the semiconducting properties of the TBP derivative were investigated by fabricating the field-effect transistors.…”
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4384por Liu, Yanming, Tian, He, Wu, Fan, Liu, Anhan, Li, Yihao, Sun, Hao, Lanza, Mario, Ren, Tian-Ling“…We propose a recirculated logic operation scheme (RLOS) using memristive hardware and 2D transistors for CA evolution, significantly reducing hardware complexity. …”
Publicado 2023
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4385por Flynn, Connor D., Chang, Dingran, Mahmud, Alam, Yousefi, Hanie, Das, Jagotamoy, Riordan, Kimberly T., Sargent, Edward H., Kelley, Shana O.“…We highlight reagentless sensing approaches that can enable sequential real-time measurements, for example, the implementation of thin-film transistors in wearable devices. In addition to sensor construction, careful consideration of physical, psychological and security concerns related to body-based sensor integration is required to ensure that the transition from the laboratory to the human body is as seamless as possible.…”
Publicado 2023
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4386por Gerasimov, Jennifer Y., Tu, Deyu, Hitaishi, Vivek, Harikesh, Padinhare Cholakkal, Yang, Chi‐Yuan, Abrahamsson, Tobias, Rad, Meysam, Donahue, Mary J., Ejneby, Malin Silverå, Berggren, Magnus, Forchheimer, Robert, Fabiano, Simone“…The classifier implements the Widrow–Hoff learning algorithm on an array of evolvable organic electrochemical transistors (EOECTs). The EOECTs’ channel conductance is modulated in situ by electropolymerizing the semiconductor material within the channel, allowing for low voltage operation, high reproducibility, and an improvement in state retention by two orders of magnitude over state‐of‐the‐art OECT devices. …”
Publicado 2023
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4387“…Patterned OSSCs can not only decrease the crosstalk between adjacent organic field‐effect transistors (OFETs), but also can be conveniently integrated with other device elements which facilitate circuits application. …”
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4388por Li, Xiangdong, Wang, Meng, Zhang, Jincheng, Gao, Rui, Wang, Hongyue, Yang, Weitao, Yuan, Jiahui, You, Shuzhen, Chang, Jingjing, Liu, Zhihong, Hao, Yue“…The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. …”
Publicado 2023
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4389por Lee, Ming-Wen, Lin, Yueh-Chin, Hsu, Heng-Tung, Gamiz, Francisco, Chang, Edward-Yi“…In this paper, AlGaN/GaN high electron mobility transistors (HEMTs) with etched-fin gate structures fabricated to improve device linearity for Ka-band application are reported. …”
Publicado 2023
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4390“…Here, we investigate the effect of metal deformations on the gate voltage dependence of the conductance of metallic armchair and zigzag CNT field effect transistors (FETs). We employ density functional theory calculations of deformed CNTs under metal contacts to demonstrate that the current-voltage characteristics of the FET devices are qualitatively different from those expected for metallic CNT. …”
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4391por Mone, Mariza, Kim, Youngseok, Darabi, Sozan, Zokaei, Sepideh, Karlsson, Lovisa, Craighero, Mariavittoria, Fabiano, Simone, Kroon, Renee, Müller, Christian“…Overall, organic electrochemical transistors (OECTs) feature a higher switching speed and a transconductance that is independent of the CNF content up to at least 20 vol % CNF. …”
Publicado 2023
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4392por Zorn, Nicolas F., Settele, Simon, Sebastian, Finn L., Lindenthal, Sebastian, Zaumseil, Jana“…Networks of these functionalized nanotubes are integrated in ambipolar, light-emitting field-effect transistors to yield the corresponding narrowband near-infrared electroluminescence. …”
Publicado 2023
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4393por Jiang, Ting, Wang, Yiru, Huang, Wanxin, Ling, Haifeng, Tian, Guofeng, Deng, Yunfeng, Geng, Yanhou, Ji, Deyang, Hu, Wenping“…The neuromorphic vision sensor (NeuVS), which is based on organic field-effect transistors (OFETs), uses polar functional groups (PFGs) in polymer dielectrics as interfacial units to control charge carriers. …”
Publicado 2023
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4394“…Furthermore, by fabricating field-effect transistors (FETs) using the carbon-incorporated MoS(2) films, we find that traditional n-type MoS(2) can transform into p-type semiconductors owing to the incorporation of carbon, a rare occurrence among TMDC materials. …”
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4395por Ham, Seonggil, Kang, Minji, Jang, Seonghoon, Jang, Jingon, Choi, Sanghyeon, Kim, Tae-Wook, Wang, Gunuk“…In this study, we designed 1D fiber-shaped multi-synapses comprising ferroelectric organic transistors fabricated on a 100-μm Ag wire and used them as multisynaptic channels in an e-textile neural network for wearable neuromorphic applications. …”
Publicado 2020
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4396por Huang, Sunchao, Duan, Ruihuan, Pramanik, Nikhil, Go, Michael, Boothroyd, Chris, Liu, Zheng, Wong, Liang Jie“…Hence, vdW heterostructures have shown much promise for technologies including photodetectors, photocatalysis, photovoltaic devices, ultrafast photonic devices, and field-effect transistors. These applications, however, remain confined to optical and suboptical regimes. …”
Publicado 2023
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4397por Chen, Min-Cheng, Chen, Hao-Yu, Lin, Chia-Yi, Chien, Chao-Hsin, Hsieh, Tsung-Fan, Horng, Jim-Tong, Qiu, Jian-Tai, Huang, Chien-Chao, Ho, Chia-Hua, Yang, Fu-Liang“…This paper reports a versatile nano-sensor technology using “top-down” poly-silicon nanowire field-effect transistors (FETs) in the conventional Complementary Metal-Oxide Semiconductor (CMOS)-compatible semiconductor process. …”
Publicado 2012
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4398“…Device applications of graphene such as ultrafast transistors and photodetectors benefit from the combination of both high-quality p- and n-doped components prepared in a large-scale manner with spatial control and seamless connection. …”
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4399“…Here, 3-aminopropyl trimethoxysilane (APTMS) and 3-mercaptopropyl trimethoxysilane (MPTMS) self-assembled monolayers (SAMs) were independently modified on the surface of silicon nanowire metal-oxide-semiconductor field effect transistors (NW-MOSFETs). Those SAMs-modified silicon NW-MOSFETs were used to discriminate various pH solutions and further verify which modified regime was capable of providing better electrical signals. …”
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4400por Neuhold, Alfred, Brandner, Hannes, Ausserlechner, Simon J., Lorbek, Stefan, Neuschitzer, Markus, Zojer, Egbert, Teichert, Christian, Resel, Roland“…When applying the various PSSA/P3HT multilayers in organic thin-film transistors, we find an excellent correlation between the determined interface morphology, structure and the device performance.…”
Publicado 2013
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