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  1. 4421
    “…The proposed device is comprised of a voltage divider and a current driver in which SiNWs are used as photodetector and field-effect transistors; it has the functions of detecting light, generating a stimulation signal in proportion to the light intensity, and transmitting the signal to a micro electrode. …”
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    Neuron Stimulation Device Integrated with Silicon Nanowire-Based Photodetection Circuit on a Flexible Substrate
  2. 4422
    “…In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS) properties, capacitors and field-effect transistors (FETs) were fabricated by changing the TMA dosage during the interface formation stage. …”
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    Initial Processes of Atomic Layer Deposition of Al(2)O(3) on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance
  3. 4423
    “…In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 V(RMS) trimmer-less flame detection sensor. …”
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    An LMS Programming Scheme and Floating-Gate Technology Enabled Trimmer-Less and Low Voltage Flame Detection Sensor
  4. 4424
    “…The Schottky junction source/drain structure has great potential to replace the traditional p/n junction source/drain structure of the future ultra-scaled metal-oxide-semiconductor field effect transistors (MOSFETs), as it can form ultimately shallow junctions. …”
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    Schottky Barrier Height Tuning via the Dopant Segregation Technique through Low-Temperature Microwave Annealing
  5. 4425
    “…Employing ionic-liquid-based dynamic template during meniscus-guided coating results in highly aligned, highly crystalline donor–acceptor polymer thin films over large area (>1 cm(2)) and promoted charge transport along both the polymer backbone and the π–π stacking direction in field-effect transistors. We further demonstrate that the charge transport anisotropy can be reversed by tuning the degree of polymer backbone alignment.…”
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    Dynamic-template-directed multiscale assembly for large-area coating of highly-aligned conjugated polymer thin films
  6. 4426
    “…A certain threshold voltage (V(T)) is required before this can be observed, and its origins are similar to that of the threshold voltage in metal oxide semiconductor field effect transistors. A physical model serves to explain the large photocurrents underneath SiO(2) by the formation of an inversion layer in Si. …”
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    High Photocurrent in Gated Graphene–Silicon Hybrid Photodiodes
  7. 4427
    “…The charge-carrier transport properties of the diindeno[1,2-b:2′,1′-n]perylene-5,12-dione and diindeno[1,2-b:2′,1′-n]perylene derivatives were investigated through the fabrication and characterization of field-effect transistors via both vacuum-deposited and solution-processed films, respectively. …”
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    Diindeno[1,2-b:2′,1′-n]perylene: a closed shell related Chichibabin's hydrocarbon, the synthesis, molecular packing, electronic and charge transport properties
  8. 4428
    “…Fe atoms were doped at the Sn atom sites, and the Fe contents are ∼2.1%, 1.5%, and 1.1%. The field-effect transistors based on the Fe(0.021)Sn(0.979)S(2) monolayer show n-type behavior and exhibit high optoelectronic performance. …”
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    A two-dimensional Fe-doped SnS(2) magnetic semiconductor
  9. 4429
    “…Finally, the extension of 1D piezoelectric materials in field effect transistors and optoelectronic devices are simply introduced.…”
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    1D Piezoelectric Material Based Nanogenerators: Methods, Materials and Property Optimization
  10. 4430
    “…[Image: see text] We report a design strategy that allows the preparation of solution processable n-type materials from low boiling point solvents for organic electrochemical transistors (OECTs). The polymer backbone is based on NDI-T2 copolymers where a branched alkyl side chain is gradually exchanged for a linear ethylene glycol-based side chain. …”
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    The Role of the Side Chain on the Performance of N-type Conjugated Polymers in Aqueous Electrolytes
  11. 4431
    “…It was found that 5b behaved as a p-type organic semiconductor in solution-processed thin film transistors with a field effect mobility of up to 0.025 cm(2) V(–1) s(–1).…”
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    Benzo[4,5]cyclohepta[1,2-b]fluorene: an isomeric motif for pentacene containing linearly fused five-, six- and seven-membered rings
  12. 4432
    “…The surface potential on the oxide-functionalized electrode of the extended gate was directly measured using full electrical circuits with the commercial metal-oxide semiconductor field-effect transistors (MOSFETs) and ring oscillator components, which resulted in cost-effective, portable and scalable real-time nucleic acid analysis. …”
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    A Sensitive Potentiometric Sensor for Isothermal Amplification-Coupled Detection of Nucleic Acids
  13. 4433
    “…Epitaxial lateral growth will be required if complex diamond-based device architecture, such as, for example, Metal-oxide-semiconductor Field-effect transistors (MOSFETs) or epitaxial lateral overgrowth (ELO) substrates, need to be developed for high-power applications. …”
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    Boron-Doping Proximity Effects on Dislocation Generation during Non-Planar MPCVD Homoepitaxial Diamond Growth
  14. 4434
    “…These findings make it possible to fabricate advanced Ge-based devices including high-speed thin-film transistors.…”
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    Improving carrier mobility of polycrystalline Ge by Sn doping
  15. 4435
    “…We have designed and then grown a simple structure for high electron mobility transistors (HEMTs) on silicon, where as usual two transitional layers of Al(x)Ga(1−x)N (x = 0.35, x = 0.17) have been used in order to engineer the induced strain as a result of the large lattice mismatch and large thermal expansion coefficient difference between GaN and silicon. …”
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    Strain Analysis of GaN HEMTs on (111) Silicon with Two Transitional Al(x)Ga(1−x)N Layers
  16. 4436
    “…Furthermore, by applying this laser cleaning technique to the channel and contacts of graphene field-effect transistors (GFETs), higher carrier mobility as well as lower contact resistance can be realized. …”
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    Toward High Carrier Mobility and Low Contact Resistance: Laser Cleaning of PMMA Residues on Graphene Surfaces
  17. 4437
    “…Polymorphism in MoTe(2) presents new opportunities in developing phase-change memory, high- performance transistors, and spintronic devices. However, it also poses challenges in synthesizing homogeneous MoTe(2) with a precisely controlled phase. …”
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    Polymorphism Control of Layered MoTe(2) through Two-Dimensional Solid-Phase Crystallization
  18. 4438
    “…By fabricating field-effect transistors, we observe that the introduction of zinc results in controlled p-doping. …”
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    Microsecond Carrier Lifetimes, Controlled p-Doping, and Enhanced Air Stability in Low-Bandgap Metal Halide Perovskites
  19. 4439
    “…Quantitatively, a nearly ten-fold faster decay rate of metallic CNTs leads to a spontaneous purification of the predicted 99.9999% semiconducting CNTs at a length of 154 mm, and the longest CNT can be 650 mm through an optimized reactor. Transistors fabricated on them deliver a high current of 14 μA μm(−1) with on/off ratio around 10(8) and mobility over 4000 cm(2) V(−1) s(−1). …”
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    Rate-selected growth of ultrapure semiconducting carbon nanotube arrays
  20. 4440
    “…The recent reports of various photodetectors based on molybdenum disulfide (MoS(2)) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. …”
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    Ultrasensitive MoS(2) photodetector by serial nano-bridge multi-heterojunction
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