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  1. 4461
    “…We present the fabrication and electrical characteristics of nanonet-channel (NET) low-temperature polysilicon channel (LTPS) thin-film transistors (TFTs) using a nanosphere-assisted patterning (NAP) technique. …”
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    Fabrication and Characterization of Nanonet-Channel LTPS TFTs Using a Nanosphere-Assisted Patterning Technique
  2. 4462
    “…Prolonged cooling time and rapid extraction are the current challenges for the development of future innovative HC-based optoelectronic devices, such as HC solar cells (HCSCs), hot energy transistors (HETs), HC photocatalytic reactors, and lasing devices. …”
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    There is plenty of room at the top: generation of hot charge carriers and their applications in perovskite and other semiconductor-based optoelectronic devices
  3. 4463
    “…2D ferroelectricity in van‐der‐Waals‐stacked materials such as indium selenide (In(2)Se(3)) has attracted interests because the ferroelectricity is robust even in ultrathin layers, which is useful for the miniaturization of ferroelectric field effect transistors. To implement In(2)Se(3) in nanoscale ferroelectric devices, an understanding of the domain structure and switching dynamics in the 2D limit is essential. …”
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    Atomic Imaging of Electrically Switchable Striped Domains in β′‐In(2)Se(3)
  4. 4464
    “…Here we demonstrate a distinct approach to artificially (spatially) separate hot electrons from cold ones in semiconductor nanowire transistors, which thus offers a unique opportunity to observe and modulate electron occupied state, energy, mobility and even path. …”
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    Direct observation and manipulation of hot electrons at room temperature
  5. 4465
    “…Semiconducting carbon nanotubes promise faster performance and lower power consumption than Si in field-effect transistors (FETs) if they can be aligned in dense arrays. …”
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    Aligned 2D carbon nanotube liquid crystals for wafer-scale electronics
  6. 4466
    “…In particular, lead perovskites have been used extensively in photovoltaic, photodetectors, thin-film transistors, and various electronic applications. On the other hand, the elimination of lead is essential because of its strong toxicity. …”
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    Synthesis of Lead-Free CaTiO(3) Oxide Perovskite Film through Solution Combustion Method and Its Thickness-Dependent Hysteresis Behaviors within 100 mV Operation
  7. 4467
    “…Mammalian brain MTs act as biomolecular transistors that generate highly synchronous electrical oscillations. …”
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    Honeybee Brain Oscillations Are Generated by Microtubules. The Concept of a Brain Central Oscillator
  8. 4468
    “…Additionally, Si MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) on sapphire substrate were fabricated by using the optimized transfer technology.…”
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    Optimization of Sacrificial Layer Etching in Single-Crystal Silicon Nano-Films Transfer Printing for Heterogeneous Integration Application
  9. 4469
    “…However, due to the particular architecture of GaN high electron mobility transistors, the relatively low thermal conductivity of the material induces the appearance of localized hotspots that degrade the devices performance and compromise their long term reliability. …”
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    Diamond/GaN HEMTs: Where from and Where to?
  10. 4470
    “…This “biostack” is integrated with organic electrochemical transistors to demonstrate sensors that monitor glucose concentration in cell cultures in situ. …”
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    Biostack: Nontoxic Metabolite Detection from Live Tissue
  11. 4471
    “…Here, we report the first organic electrochemical neurons (OECNs) with ion-modulated spiking, based on all-printed complementary organic electrochemical transistors. We demonstrate facile bio-integration of OECNs with Venus Flytrap (Dionaea muscipula) to induce lobe closure upon input stimuli. …”
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    Organic electrochemical neurons and synapses with ion mediated spiking
  12. 4472
    “…Here, we describe a novel class of X-ray sensors based on GaN thin film and GaN/AlGaN high-electron-mobility transistors (HEMTs), a promising enabling technology in the modern world of GaN devices for high power, high temperature, high frequency, optoelectronic, and military/space applications. …”
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    GaN Heterostructures as Innovative X-ray Imaging Sensors—Change of Paradigm
  13. 4473
    “…We fabricated and characterized AlGaN/GaN high-electron mobility transistors (HEMTs) with a nano-sized in situ cap layer (one is a silicon carbon nitride (SiCN) layer, and the other is a silicon nitride (SiN) layer) comparing to the conventional device without an in situ cap layer. …”
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    High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer
  14. 4474
    “…However, very few studies on robust flexible synaptic transistors have been reported, which hold great potential for soft robotics and wearable applications. …”
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    Flexible synaptic floating gate devices with dual electrical modulation based on ambipolar black phosphorus
  15. 4475
    “…As semiconductor device architecture develops, from planar field-effect transistors (FET) to FinFET and gate-all-around (GAA), there is an increased need to measure 3D structure sidewalls precisely. …”
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    Automated measurement and analysis of sidewall roughness using three-dimensional atomic force microscopy
  16. 4476
    “…We report a flexible and noninvasive method based on field-effect transistors hybridizing semiconducting single-walled carbon nanotubes for monitoring the effects of histamine on Ca(2+) release from the intracellular stores of a nonexcitable cell. …”
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    Semiconducting Carbon Nanotube-Based Nanodevices for Monitoring the Effects of Chlorphenamine on the Activities of Intracellular Ca(2+) Stores
  17. 4477
    “…It is widely used in electronic devices, such as in organic thin-film transistors (OTFTs), organic light-emitting diodes (OLEDs), photodetectors, and smart sensors. …”
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    Review of the Common Deposition Methods of Thin-Film Pentacene, Its Derivatives, and Their Performance
  18. 4478
    “…WSe(2) and MoSe(2) back-gated field effect transistors (FETs) exhibited good gate modulation behavior, and high hole and electron mobilities of ∼2.2 and ∼15.1 cm(2) V(−1) s(−1), respectively. …”
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    A vertical WSe(2)–MoSe(2) p–n heterostructure with tunable gate rectification
  19. 4479
    “…In this study, we focused on the structural growth of solution-processed amorphous indium-zinc-oxide (a-IZO) films and the electrical behavior of a-IZO thin-film transistors (TFT). To this end, solution-processed a-IZO films were prepared with respect to the Zn molar ratio, and their structural characteristics were analyzed. …”
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    Atomic Structure Evaluation of Solution-Processed a-IZO Films and Electrical Behavior of a-IZO TFTs
  20. 4480
    “…Synapse nodes in brain-inspired computing have been typically implemented with dozens of silicon transistors, which is an energy-intensive and non-scalable approach. …”
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    Ion-Movement-Based Synaptic Device for Brain-Inspired Computing
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