Materias dentro de su búsqueda.
Mostrando 4,561 - 4,580 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.18s Limitar resultados
  1. 4561
    “…A single radio-frequency (RF) switch composed of three parallel hetero junction bipolar transistors (HBTs) in a common-collector configuration and a multimodal three-line microstrip structure in the input matching network are used to obtain a LNA chip of miniaturized size. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Miniature Switchable Millimeter-Wave BiCMOS Low-Noise Amplifier at 120/140 GHz Using an HBT Switch
  2. 4562
    “…Finally, we fabricate field-effect transistors with state-of-the-art trans-conductance and electron mobility. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits
  3. 4563
    “…Notably, 2D Co(2)P is a p‐type semiconductor, with a hole mobility of 20.8 cm(2) V(−1) s(−1) at 300 K in field‐effect transistors. It also behaves as a promising electrocatalyst for the oxygen evolution reaction (OER), thanks to the charge‐transport modulation and improved surface exposure. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Topochemical Synthesis of Two‐Dimensional Transition‐Metal Phosphides Using Phosphorene Templates
  4. 4564
    “…Achieving high mobility in SnO(2), which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    High mobility approaching the intrinsic limit in Ta-doped SnO(2) films epitaxially grown on TiO(2) (001) substrates
  5. 4565
    “…Specifically, thin-film transistors based on IGZO FN exhibit negligible performance degradation after one thousand bending cycles and exceptional room-temperature gas sensing performance. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Flexible and stretchable metal oxide nanofiber networks for multimodal and monolithically integrated wearable electronics
  6. 4566
    “…In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage
  7. 4567
    “…All circuits have a small number of active components and the basic block has only three, two transistors and a silicon controlled rectifier (SCR). …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Biologically Relevant Dynamical Behaviors Realized in an Ultra-Compact Neuron Model
  8. 4568
    “…Here, we describe the recent advances in charge storage devices containing a biomolecule and nanoparticle heterolayer including (1) electrical resistive charge storage devices, (2) electrochemical biomemory devices, (3) field-effect transistors, and (4) biomemristors. Progress in biomolecule–nanomaterial heterolayer-based charge storage devices will lead to unprecedented opportunities for the integration of information and communications technology, biotechnology, and nanotechnology for the Fourth Industrial Revolution.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Recent Advances in Biomolecule–Nanomaterial Heterolayer-Based Charge Storage Devices for Bioelectronic Applications
  9. 4569
    “…Electron tunneling across the interface occurs via a gate-tunable, direct tunneling-to-field emission mechanism with increasing bias, and photoinduced charge transfer occurs at femtosecond timescale (~50 fs). Field effect transistors fabricated on molecularly thin Ruddlesden-Popper perovskite using graphene contact exhibit electron mobilities ranging from 0.1 to 0.018 cm(2)V(−1)s(−1) between 1.7 to 200 K. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Electron tunneling at the molecularly thin 2D perovskite and graphene van der Waals interface
  10. 4570
    “…The process involves an aqueous mini‐emulsion polymerization that generates a surfactant‐stabilized aqueous dispersion of OSC nanoparticles at sufficient concentration to permit direct aqueous processing into thin films for use in organic field‐effect transistors. Promisingly, the performance of these devices is comparable to those prepared using conventional synthesis and processing procedures optimized for large amounts of VOCs and halogenated solvents. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Organic Semiconductors Processed from Synthesis‐to‐Device in Water
  11. 4571
    por Asadi, Amin, Pourfattah, Farzad
    Publicado 2020
    “…It is important to provide a uniform temperature distribution on the surface of the insulated gate bipolar transistors and diodes. The thermal management of a PE module is the main objective of the present study. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Effects of constructal theory on thermal management of a power electronic system
  12. 4572
    “…2D molybdenum disulfide (MoS(2))-based thin film transistors are widely used in biosensing, and many efforts have been made to improve the detection limit and linear range. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Bio-Separated and Gate-Free 2D MoS(2) Biosensor Array for Ultrasensitive Detection of BRCA1
  13. 4573
    “…With this technique, we demonstrate reconfigurable transistors from n-type to p-type and back-gate to dual-gate structures through re-stacking. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Reconfigurable electronics by disassembling and reassembling van der Waals heterostructures
  14. 4574
    “…The result measured from thin-film transistors made of the generated films/structures showed that the charge mobility of P(NDI2OD-T2) does not change much with the film morphology, which supports recent controversy over the charge-transportation mechanism of some donor–acceptor polymer semiconductors.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Variety of Ordered Patterns in Donor–Acceptor Polymer Semiconductor Films Crystallized from Solution
  15. 4575
    “…Pyrene derivatives play a prominent role in organic electronic devices, including field effect transistors, light emitting diodes, and solar cells. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Topology Effects in Molecular Organic Electronic Materials: Pyrene and Azupyrene
  16. 4576
    “…Hereby, high‐performance and transparent organic field‐effect transistors with a hole mobility of ≈5.4 cm(2) V(–1) s(–1) and an average transmittance exceeding 72% in the visible range are achieved.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Direct Observation of Confinement Effects of Semiconducting Polymers in Polymer Blend Electronic Systems
  17. 4577
    “…Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently employed for the fabrication of high-efficiency power electronic devices, such as diodes and transistors. In this context, selective doping is one of the key processes needed for the fabrication of these devices. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Selective Doping in Silicon Carbide Power Devices
  18. 4578
    “…This short critical review is devoted to the synthesis and functionalization of various types of azaacenes, organic semiconducting compounds which can be considered as promising materials for the fabrication of n-channel or ambipolar field effect transistors (FETs), components of active layers in light emitting diodes (LEDs), components of organic memory devices and others. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Azaacenes Based Electroactive Materials: Preparation, Structure, Electrochemistry, Spectroscopy and Applications—A Critical Review †
  19. 4579
    “…Here, we overcome these challenges by utilizing machine-learning (ML) algorithms to evaluate key process parameters that impact the electrical characteristics of MoS(2) top-gated field-effect transistors (FETs). The wafer-scale fabrication processes are then guided by ML combined with grid searching to co-optimize device performance, including mobility, threshold voltage and subthreshold swing. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Wafer-scale functional circuits based on two dimensional semiconductors with fabrication optimized by machine learning
  20. 4580
    “…Horizontally stacked pure-Ge-nanosheet gate-all-around field-effect transistors (GAA FETs) were developed in this study. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Ge/Si multilayer epitaxy and removal of dislocations from Ge-nanosheet-channel MOSFETs
Herramientas de búsqueda: RSS