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4601“…Our findings can contribute to the development of more efficient and tailored PEDOT:PSS-based devices for a wide range of applications, including supercapacitors, batteries, electrochemical transistors, and sensors.…”
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4602“…The DDTA employs the bulk-driven (BD) multiple-input MOS transistors technique (MI-MOST) operating in the subthreshold region. …”
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4603“…Then, we summarized the research progress of the applications for IL-modified PUs in different fields, including sensors, actuators, transistors, antistatic films, etc. Finally, we discussed the future development trends and challenges faced by IL-modified PUs.…”
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4604por Hu, Shengjie, Jiang, Xuecheng, Yang, Liang, Tang, Xue, Yang, Guofeng, Hu, Yuanyuan, Wang, Jie, Lu, Naiyan“…To address these challenges, we report a soluble egg antigen (SEA)-based functionalized gridless and meander-type AlGaN/GaN high electron mobility transistors (HEMT) sensor for the highly sensitive detection of antibodies to Schistosoma japonicum. …”
Publicado 2023
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4605“…This review focuses on the intrinsic charge transport in organic photovoltaic (PVC) devices and field-effect transistors (SAM-OFETs) fabricated by vapor phase molecular self-assembly (VP-SAM) method. …”
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4606por El-Desouki, Munir, Deen, M. Jamal, Fang, Qiyin, Liu, Louis, Tse, Frances, Armstrong, David“…Since there is a practical limit on the minimum pixel size (4∼5 μm) due to limitations in the optics, CMOS technology scaling can allow for an increased number of transistors to be integrated into the pixel to improve both detection and signal processing. …”
Publicado 2009
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4607“…Individual stressed NWs are recognized as an ideal platform for the exploration of strain-related electronic and optical effects and may contribute significantly to the realization of novel optoelectronic devices, strain-enhanced field-effect transistors (FETs), or highly sensitive strain gauges.…”
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4608“…[Image: see text] Poly(3-hexylthiophene) (P3HT) is one of the most extensively investigated conjugated polymers and has been employed as the active material in many devices including field-effect transistors, organic photovoltaics and sensors. As a result, methods to further tune the properties of P3HT are desirable for specific applications. …”
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4609“…Microprocessors are among those artificial information processing systems that are both complex and that we understand at all levels, from the overall logical flow, via logical gates, to the dynamics of transistors. We show that the approaches reveal interesting structure in the data but do not meaningfully describe the hierarchy of information processing in the microprocessor. …”
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4610“…This paper presents a distance detector composed of two separated metal-oxide semiconductor field-effect transistors (MOSFETs), a differential polysilicon cross-shaped Hall plate (CSHP), and a readout circuit. …”
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4611“…It is a candidate for potential applications such as smart windows, fast optoelectronic switches, and field-effect transistors. The change in optical properties at the IMT allows distinguishing between the insulating and the metallic phases in the mixed state. …”
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4612“…The array of sensors is composed of six Ion-Sensitive Field Effect Transistors (ISFET)-based sensors, one conductivity sensor, one redox potential sensor, and two amperometric electrodes, one gold microelectrode for chlorine detection, and one nanocomposite planar electrode for sensing electrochemical oxygen demand. …”
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4613por Tarabella, Giuseppe, Marasso, Simone Luigi, Bertana, Valentina, Vurro, Davide, D’Angelo, Pasquale, Iannotta, Salvatore, Cocuzza, Matteo“…The prototype is indeed able to operate both as a three-terminal device showing the typical response of organic electrochemical transistors (OECTs), with a higher amplification performance with respect to planar (2D) all-PEDOT:PSS OECTs, and as a two-terminal device able to efficiently implement a resistive sensing of water vaporization and perspiration, showing performances at least comparable to that of state-of-art resistive humidity sensors based on pristine PEDOT:PSS. …”
Publicado 2019
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4614por Osaki, Shuto, Kintoki, Takuya, Moriuchi-Kawakami, Takayo, Kitamura, Kenichi, Wakida, Shin-ichi“…We have investigated human-stress monitoring by making use of salivary nitrate, which can be a candidate for stress markers, with ion-selective field-effect transistors (ISFETs). ISFETs are suitable for on-site single-drop analysis of salivary nitrate within 10 s. …”
Publicado 2019
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4615“…The transient thermal characteristics of pulse operated AlGaN/GaN high electron mobility transistors (HEMT) used in high power amplifiers are systematically investigated by using three-dimensional simulation with the finite element method. …”
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4616“…This paper demonstrates, for the first time, the detailed design procedure and performance of a digitally controlled 2 kVA three-phase shunt APF system using gallium nitride (GaN) high electron mobility transistors (HEMTs). The designed digital control scheme consists of three type II controllers with a digital signal processor (DSP) as the control core. …”
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4617“…Modern seagoing ships are often equipped with converters which utilize semiconductor power electronics devices like thyristors or power transistors. Most of them are used in driving applications such as powerful main propulsion plants, auxiliary podded drives and thrusters. …”
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4618“…Recently, nucleic acid hybridization, antigen-antibody interaction, and change of reactive oxygen species (ROS) level are mostly used for the generation of analytical signals, which can be accurately measured by electrochemical, optical, surface plasmon resonance, field-effect transistors, and some other methods and transducers. …”
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4619“…Different types of dopamine biosensors, including (micro)electrodes, biosensing platforms, or field-effect transistors, are also described.…”
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4620por Lee, Sangjun, Cho, Kyunghwan, Kim, Jihye, Park, Jongho, Lee, Inhwan, Kang, Sungho“…However, during scan testing, test-power consumption becomes more serious as the number of transistors and the complexity of chips increase. Hence, the scan chain reordering method is widely applied in a low-power architecture because of its ability to achieve high power reduction with a simple architecture. …”
Publicado 2021
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