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4681por Naskar, Nilanjon, Schneidereit, Martin F., Huber, Florian, Chakrabortty, Sabyasachi, Veith, Lothar, Mezger, Markus, Kirste, Lutz, Fuchs, Theo, Diemant, Thomas, Weil, Tanja, Behm, R. Jürgen, Thonke, Klaus, Scholz, Ferdinand“…The development of sensitive biosensors, such as gallium nitride (GaN)-based quantum wells, transistors, etc., often makes it necessary to functionalize GaN surfaces with small molecules or even biomolecules, such as proteins. …”
Publicado 2020
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4682por Agrawal, Harshal, Patra, Biplab K., Altantzis, Thomas, De Backer, Annick, Garnett, Erik C.“…Such information is critically important for applications: drastically reducing dislocation density was the key breakthrough enabling widespread implementation of light-emitting diodes, while strain engineering has been fundamental to modern high-performance transistors, solar cells, and thermoelectrics. In this work, the interfacial defect and strain formation after self-assembly and room temperature epitaxy of 7 nm Pd nanocubes capped with polyvinylpyrrolidone (PVP) is examined. …”
Publicado 2020
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4683“…Tin monoxide (SnO) has attracted attention due to its p-type character and capability of ambipolar conductivity when properly doped, properties that are beneficial for the realization of complementary oxide thin film transistors technology, transparent flexible circuits and optoelectronic applications in general. …”
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4684por Vallejo-Perez, Monica, Ternon, Céline, Spinelli, Nicolas, Morisot, Fanny, Theodorou, Christoforos, Jayakumar, Ganesh, Hellström, Per-Erik, Mouis, Mireille, Rapenne, Laetitia, Mescot, Xavier, Salem, Bassem, Stambouli, Valérie“…Field effect transistors (FETs) based on networks of randomly oriented Si nanowires (Si nanonets or Si NNs) were biomodified using Thrombin Binding Aptamer (TBA–15) probe with the final objective to sense thrombin by electrical detection. …”
Publicado 2020
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4685por Darabi, Sozan, Hummel, Michael, Rantasalo, Sami, Rissanen, Marja, Öberg Månsson, Ingrid, Hilke, Haike, Hwang, Byungil, Skrifvars, Mikael, Hamedi, Mahiar M., Sixta, Herbert, Lund, Anja, Müller, Christian“…We demonstrate the electrochemical functionality of the yarn through incorporation into organic electrochemical transistors (OECTs). Moreover, by using a household sewing machine, we have manufactured an out-of-plane thermoelectric textile device, which can produce 0.2 μW at a temperature gradient of 37 K.…”
Publicado 2020
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4686por Peruzzi, Carlotta, Battistoni, Silvia, Montesarchio, Daniela, Cocuzza, Matteo, Marasso, Simone Luigi, Verna, Alessio, Pasquardini, Laura, Verucchi, Roberto, Aversa, Lucrezia, Erokhin, Victor, D’Angelo, Pasquale, Iannotta, Salvatore“…Organic electrochemical transistors (OECTs) represent a promising class of devices combining a minimal invasiveness and good signal transduction. …”
Publicado 2021
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4687por Chen, Xin, Dong, Jianqi, He, Chenguang, He, Longfei, Chen, Zhitao, Li, Shuti, Zhang, Kang, Wang, Xingfu, Wang, Zhong Lin“…High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. …”
Publicado 2021
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4688por Wang, Yanhao, Pang, Jinbo, Cheng, Qilin, Han, Lin, Li, Yufen, Meng, Xue, Ibarlucea, Bergoi, Zhao, Hongbin, Yang, Feng, Liu, Haiyun, Liu, Hong, Zhou, Weijia, Wang, Xiao, Rummeli, Mark H., Zhang, Yu, Cuniberti, Gianaurelio“…Next, the electronic and optoelectronic properties of PdSe(2) and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. …”
Publicado 2021
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4689“…Artificial neurons based on emerging devices, such as memristors and ferroelectric field-effect transistors with inherent stochasticity can produce uncertain non-linear output spikes, which may be the key to make machine learning closer to the human brain. …”
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4690por Sun, Hui, Li, Zhi-Yue, Chen, Sheng-Chi, Liao, Ming-Han, Gong, Jian-Hong, Bai, Zhamatuofu, Wang, Wan-Xia“…In-Sn-Zn oxide (ITZO) nanocomposite films have been investigated extensively as a potential material in thin-film transistors due to their good electrical properties. …”
Publicado 2021
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4691por Yoon, Young Jun, Lee, Jae Sang, Suk, Jae Kwon, Kang, In Man, Lee, Jung Hee, Lee, Eun Je, Kim, Dong Seok“…This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride (SiN) passivation/GaN cap interface. …”
Publicado 2021
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4692por Pintilie, Lucian, Boni, Georgia Andra, Chirila, Cristina Florentina, Stancu, Viorica, Trupina, Lucian, Istrate, Cosmin Marian, Radu, Cristian, Pintilie, Ioana“…Polarization switching in ferroelectric films is exploited in many applications, such as non-volatile memories and negative capacitance field affect transistors. This can be inhomogeneous or homogeneous, depending on if ferroelectric domains are forming or not during the switching process. …”
Publicado 2021
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4693por Xu, Xinzhao, Bowen, Benjamin J., Gwyther, Rebecca E. A., Freeley, Mark, Grigorenko, Bella, Nemukhin, Alexander V., Eklöf‐Österberg, Johnas, Moth‐Poulsen, Kasper, Jones, D. Dafydd, Palma, Matteo“…Using a β‐lactamase binding protein (BLIP2) as the capture protein attached to carbon nanotube field effect transistors in different defined orientations. Device conductance had influence on binding TEM‐1, an important β‐lactamase involved in antimicrobial resistance (AMR). …”
Publicado 2021
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4694por Derkowska-Zielinska, Beata, Kaczmarek-Kedziera, Anna, Sypniewska, Malgorzata, Chomicki, Dariusz, Szczesny, Robert, Skowronski, Lukasz, Figà, Viviana, Krupka, Oksana“…It was shown that the optical energy band gaps of the investigated piperazine-containing polymers are in the range from 2.73 to 2.81 eV, which reveals their promising potential for the advances in photovoltaics, field effect transistors, or electrochromic devices as an alternative for other widely applied polymer materials.…”
Publicado 2021
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4695“…Moreover, recently these bioinspired nanostructures are also considered particularly interesting for molecular electronics applications due to their surprisingly high conductance and thickness-independent capacitance, which make them a very promising element of organic field-effect transistors (OFETs). Our structural analysis conducted for a series of prototypic homooligopeptides based on glycine (Gly) with cysteine (Cys) as a substrate bonding group chemisorbed on Au and Ag metal substrates (Gly(n)Cys/Au(Ag), n = 1–9) exhibits the formation by these monolayers secondary structure close to β-sheet conformation with pronounced odd–even structural effect strongly affecting packing density and conformation of molecules in the monolayer, which depend on the length of molecules and the type of metal substrate. …”
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4696por Wang, Rixuan, Lee, Joonjung, Hong, Jisu, Kwon, Hyeok-jin, Ye, Heqing, Park, Juhyun, Park, Chan Eon, Kim, Joon Ho, Choi, Hyun Ho, Eom, Kyuyoung, Kim, Se Hyun“…The deposited PI thin films were successfully applied as gate dielectrics for organic field-effect transistors (OFETs). The PI layers showed suitable characteristics for dielectrics, such as a smooth surface, low leakage current density, uniform dielectric constant (k) values regardless of frequency, and compatibility with organic semiconductors. …”
Publicado 2021
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4697por Kaiser, Simon, Neumann, Tobias, Symalla, Franz, Schlöder, Tobias, Fediai, Artem, Friederich, Pascal, Wenzel, Wolfgang“…Organic semiconductors (OSC) are key components in applications such as organic photovoltaics, organic sensors, transistors and organic light emitting diodes (OLED). …”
Publicado 2021
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4698por Santos, Rúben F., Oliveira, Bruno M. C., Savaris, Liliane C. G., Ferreira, Paulo J., Vieira, Manuel F.“…The continuous miniaturisation of transistors and interconnects into the nanoscale are pushing conventional materials to their physical limits and creating the need to replace them. …”
Publicado 2022
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4699por Kim, Hyojung, Park, Jongwoo, Khim, Taeyoung, Park, Jungmin, Han, Chanhee, Yoo, Jongmin, Kim, Dongbhin, Song, Jangkun, Choi, Byoungdeog“…Here, we introduce a new barrier material, SiCOH, into the backplane of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) and applied it to production-level flexible panels. …”
Publicado 2022
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4700por Song, Dowon, Jeong, Myoungho, Kim, Juhan, Kim, Bongju, Kim, Jae Ha, Kim, Jae Hoon, Lee, Kiyoung, Kim, Yongsung, Char, Kookrin“…Scaling down of semiconductor devices requires high-k dielectric materials to continue lowering the operating voltage of field-effect transistors (FETs) and storing sufficient charge on a smaller area. …”
Publicado 2022
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