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  1. 4741
    “…In particular, GeSn field effect transistors can exhibit very high performance in terms of power reduction and operating speed because of the high electron drift mobility, while the SiGeSn system can be constructed using CMOS-compatible techniques to realize lasers, LED, and photodetectors. …”
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    Dispersion of nonresonant third-order nonlinearities in GeSiSn ternary alloys
  2. 4742
    “…The persistent photoconductivity (PPC) in ZnO has been a critical problem in opto-electrical devices employing ZnO such as ultraviolet sensors and thin film transistors for the transparent display. While the metastable state of oxygen vacancy (V(O)) is widely accepted as the microscopic origin of PPC, recent experiments on the influence of temperature and oxygen environments are at variance with the V(O) model. …”
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    Light-Induced Peroxide Formation in ZnO: Origin of Persistent Photoconductivity
  3. 4743
    “…Considering that PNDT4iBT has relatively low highest occupied molecular orbital (HOMO) energy level (−5.2 eV) and moderately high mobilities in the order of 10(−2) cm(2) V(−1) s(−1), the NDT4 core, when linked at the naphthalene positions, can be a good building unit for the development of high-performance semiconducting polymers for both organic field-effect transistors and photovoltaic devices.…”
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    5, 10-linked naphthodithiophenes as the building block for semiconducting polymers
  4. 4744
    “…The biosensor incorporates high selectivity and sensitivity by integrating aptamers as the recognition element and field-effect transistors as the signal transducer. The drug tenofovir was used as a model small molecule. …”
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    Aptamer-based Field-Effect Biosensor for Tenofovir Detection
  5. 4745
    “…Here, dual-gated graphene field-effect transistors have been firstly used to achieve frequency quadrupling. …”
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    A graphene based frequency quadrupler
  6. 4746
    “…We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. …”
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    Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length
  7. 4747
    “…Additionally, we identified the applicability of the MMS in the case of practical devices by applying it to electrodes of thin-film transistors (TFTs). The TFTs with MMS electrodes showed comparable electrical characteristics to those with conventional film-type electrodes. …”
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    Structural Engineering of Metal-Mesh Structure Applicable for Transparent Electrodes Fabricated by Self-Formable Cracked Template
  8. 4748
    “…Alignment of aggregates in films is achieved by using off-center spin coating, whereby PNDIFu2 exhibits a stronger dichroic ratio and transport anisotropy in field-effect transistors (FET) compared to PNDIT2, with an overall good electron mobility of 0.21 cm(2)/(V s). …”
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    Highly Planarized Naphthalene Diimide–Bifuran Copolymers with Unexpected Charge Transport Performance
  9. 4749
    “…Moreover, the effect of NH(4)OH on the electrical properties of ZnO NWs, such as doping and field-effect mobility, is thoroughly investigated by fabricating single nanowire field-effect transistors. The electrical study shows the increase of free charge density while decrease of mobility in ZnO NWs with the increase of NH(4)OH concentration in the growth solution. …”
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    A facile hydrothermal approach for the density tunable growth of ZnO nanowires and their electrical characterizations
  10. 4750
    “…The effects of UV-ozone (UVO) treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs) that use Al(2)O(3) as the sensing film have been investigated. …”
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    Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al(2)O(3) Sensing Film
  11. 4751
    “…Back-gated GNR field-effect transistors were fabricated on a heavily p-doped Si substrate coated with a 300 nm-thick SiO(2) layer, by O(2) reactive ion etching of graphene sheets using etch masks based on Si NWs aligned on the graphene between the two electrodes by a dielectrophoresis method. …”
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    Effect of ribbon width on electrical transport properties of graphene nanoribbons
  12. 4752
    “…Investigation of isolated SWCNT-based field-effect transistors shows that the carbon-welded joints convert the Schottky contacts between metallic and semiconducting SWCNTs into near-ohmic ones, which significantly improves the conductivity of the transparent SWCNT network. …”
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    Ultrahigh-performance transparent conductive films of carbon-welded isolated single-wall carbon nanotubes
  13. 4753
    “…Electrical measurements illustrated that top-gated field effect transistors with different neck widths of the GNM possessed different I(on)/I(off) ratios. …”
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    The Fabrication of Large-Area, Uniform Graphene Nanomeshes for High-Speed, Room-Temperature Direct Terahertz Detection
  14. 4754
    “…MTs are bio-electrochemical transistors that form nonlinear electrical transmission lines. …”
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    Bundles of Brain Microtubules Generate Electrical Oscillations
  15. 4755
    por Wang, Yuwei, Liu, Hong, Shen, Wenzhong
    Publicado 2018
    “…Hydrogenated nanocrystalline silicon (nc-Si:H) thin film has received a great deal of attention as a promising material for flat panel display transistors, solar cells, etc. However, the multiphase structure of nc-Si:H leads to many defects. …”
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    A Convenient and Effective Method to Deposit Low-Defect-Density nc-Si:H Thin Film by PECVD
  16. 4756
    “…MoS(2) field-effect transistors (FETs) were fabricated using Pt and Al electrodes. …”
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    Carrier Transport Properties of MoS(2) Asymmetric Gas Sensor Under Charge Transfer-Based Barrier Modulation
  17. 4757
    “…For future nanoelectronic devices – such as room-temperature single electron transistors – the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. …”
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    Site-controlled formation of single Si nanocrystals in a buried SiO(2) matrix using ion beam mixing
  18. 4758
    “…This study provides guidance for future NCPC materials for insulating gates in organic field-effect transistors (OFETs) and advanced electronic applications.…”
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    Nanocomposite–parylene C thin films with high dielectric constant and low losses for future organic electronic devices
  19. 4759
    por Zhong, Peng, Ma, Xiaohua, Xi, He
    Publicado 2017
    “…Therefore, fullerene passivation is a promising method to ameliorate the connection between conjugated polymers and metal oxides, and is applicable in diverse areas, such as solar cells, transistors, and light-emitting dioxides.…”
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    Passivating ZnO Surface States by C60 Pyrrolidine Tris-Acid for Hybrid Solar Cells Based on Poly(3-hexylthiophene)/ZnO Nanorod Arrays
  20. 4760
    “…In the emerging field of organic bioelectronics, conducting polymers and ion-selective membranes are combined to form resistors, diodes, transistors, and circuits that transport and process both electronic and ionic signals. …”
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    Formation of Monolithic Ion-Selective Transport Media Based on “Click” Cross-Linked Hyperbranched Polyglycerol
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