“…An attempt to directly evaluate carrier mobilities using pentacene/CPVP–C(6) field-effect transistors was made, and a seeming increase in the carrier mobilities observed with the increase in the CPVP–C(6) thickness was ascribed to a hygroscopic nature of the CPVP–C(6) film, which was evidenced by the capacitance and quartz crystal microbalance measurements. …”
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“…[Image: see text] Organic semiconductor-based thin-film transistors’ (TFTs) charge-carrier mobility has been enhanced up to 25 cm(2)/V s through the improvement of fabrication methods and greater understanding of the microstructure charge-transport mechanism. …”
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“…Apart from very sharp and intense light absorption by these molecular sensitizers in near-infrared (NIR) wavelength region, their possibility as small molecular organic semiconductor was also explored after fabricating organic field-effect transistors (OFETs). Results obtained from photophysical, electrochemical, and quantum chemical studies were combined to elucidate the structural and optoelectronic properties. …”
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“…As one of the highest mobility semiconductor materials, carbon nanotubes (CNTs) have been extensively studied for use in field effect transistors (FETs). To fabricate surround-gate FETs— which offer the best switching performance—deposition of conformal, weakly-interacting dielectric layers is necessary. …”
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“…Traditional solid-state sensors based on metal-oxide transistors have the drawbacks of high power consumption, high operating temperature, poor selectivity, and difficult integration with other electronics. …”
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“…Silicon carbide (SiC) metal-oxide-semiconductor field effect transistors (MOSFETs) are expected as power electronic devices for high radiative conditions, including nuclear plants and space. …”
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“…In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS(2) downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS(2) showed p-type conduction with a field-effect mobility of 0.023 cm(2)/V⋅s and an on/off current ratio of 10(3), while FETs with the pristine MoS(2) showed n-type behavior with a field-effect mobility of 29.7 cm(2)/V⋅s and an on/off current ratio of 10(5). …”
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“…In this study, we report two types of peptide hormone sensors using human hormone receptor-carrying nanovesicles and graphene field-effect transistors (FETs). Parathyroid hormone (PTH) and glucagon (GCG) are peptide hormones present in human blood that act as ligands to G protein-coupled receptors (GPCRs). …”
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“…Importantly, the material exhibits high electron mobilities and good optoelectronic properties as demonstrated by the fabrication of high-performance transistors and light-emitting devices. Furthermore, this work may enable integration of III–Vs with silicon complementary metal-oxide-semiconductor (CMOS) processing for monolithic 3D integrated circuits and/or back-end electronics.…”
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“…This finding would positively impact the research on VO(2) thin films, not only as smart windows but also for numerous other applications like bolometers, infrared detectors, Mott transistors and many more.…”
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“…Here, we fabricate ammonia sensors based on organic transistors by using poly(3-hexylthiophene) (P3HT) blended with tris(pentafluorophenyl)borane (TPFB) as an active layer. …”
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“…In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. …”
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“…Here, we explore large-area grown MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFET). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits where logic operations can be directly performed using the memory elements. …”
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“…The paper contributes to the characterization and understanding the mutual interactions of the polar polymer gate dielectric and organic semiconductor in organic field effect transistors (OFETs). It has been shown on the example of cyanoethylated polyvinylalcohol (CEPVA), the high-k dielectric containing strong polar side groups, that the conditions during dielectric layer solidification can significantly affect the charge transport in the semiconductor layer. …”
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“…[Image: see text] The sensitivity of conventional ion-sensitive field-effect transistors (ISFETs) is limited by the Nernst equation, which is not sufficient for detecting weak biological signals. …”
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“…As an experimental historical study of stability, we fabricated and characterized organic transistors from a material batch synthesized in 1932 and compared the results to a fresh material batch.…”
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“…Traditionally, band engineering of these metal-oxides has been performed to improve the efficiency of solar cells and transistors. However, recent advancements in the field of oxide-based electronic devices demand reversible band structure engineering for applications in next-generation adaptive electronics and memory devices. …”
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“…Here, graphene is examined as recognition layer in electrochemical sensors like field-effect transistors, chemiresistors, impedance-based devices as well as voltammetric and amperometric sensors. …”
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“…The measurements of bidirectional high frequency (HF) C-V characteristics and positive bias stress stability show that the number of un-trapped NIETs and oxide electron traps decreased with increasing irradiation doses because they are filled by electrons resulted from the ionization effect of proton irradiation, benefiting to the field effective mobility (μ(FE)) and threshold voltage stability of metal–oxide–semiconductor field-effect transistors (MOSFETs). The obviously negative shift of flat-band voltage (V(FB)) resulted from the dominant NIHTs induced by nitrogen passivation capture more holes produced by ionization effect, which has been revealed by the experimental samples with different nitrogen content under same irradiation dose.…”
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“…The static and dynamic deflection transducing performances of piezotransistive AlGaN/GaN heterojunction field effect transistors (HFET) and piezoresistive VO(2) thin films, fabricated on GaN microcantilevers of similar dimensions, were investigated. …”
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