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4821“…In this work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single-nanostructure back-gated field-effect-transistors via photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced by a facile synthesis and extensively studied by scanning and transmission electron microscopy. …”
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4822por Kumari, Nikita, Alam, Tabish, Ali, Masood Ashraf, Yadav, Anil Singh, Gupta, Naveen Kumar, Siddiqui, Md Irfanul Haque, Dobrotă, Dan, Rotaru, Ionela Magdalena, Sharma, Abhishek“…Electronic gadgets have been designed to incorporating very small components such as microcontrollers, electronic chips, transistors, microprocessors, etc. These components are exceptionally heat sensitive and can be wrecked if heat is not released. …”
Publicado 2022
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4823por Broomfield, Joseph, Kalofonou, Melpomeni, Pataillot-Meakin, Thomas, Powell, Sue M., Fernandes, Rayzel C., Moser, Nicolas, Bevan, Charlotte L., Georgiou, Pantelis“…This technique was implemented onto a lab-on-chip platform integrating an array of chemical sensors (ion-sensitive field-effect transistors) for real-time detection of RNA. Detection of RNA presence was achieved through the translation of chemical signals into electrical readouts. …”
Publicado 2022
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4824por Chen, Kaixuan, Wei, Huan, Chen, Ping-An, Liu, Yu, Guo, Jing, Xia, Jiangnan, Xie, Haihong, Qiu, Xincan, Hu, Yuanyuan“…In this work, we acquired a deeper understanding of the charge transport in Y6 by fabricating and characterizing thin-film transistors (TFTs), and found that the electron mobility of Y6 is over 0.3–0.4 cm(2)/(V⋅s) in top-gate bottom-contact devices, which is at least one order of magnitude higher than that of another well-known NFA ITIC. …”
Publicado 2022
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4825“…In this work, some molecular switches (MSs) were connected with each other to implement arbitrary binary functions by emulating the threshold switching of MOS transistors and the decision tree model. Using specific sequences of different SARS-CoV-2 variants as inputs, the MSs net was used to build several molecular biocomputing circuits, including NOT, AND, OR, INHIBIT, XOR, half adder, half subtractor, full adder, and full subtractor. …”
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4826por Li, Deli, Dong, Xue, Cheng, Peng, Song, Lin, Wu, Zhongbin, Chen, Yonghua, Huang, Wei“…Perovskite/electrode contacts are crucial for constructing high‐performance charge‐transporting‐layer‐free perovskite devices, such as solar cells, field‐effect transistors, artificial synapses, memories, etc. Many studies have evidenced that the perovskite layer can directly contact the electrodes, showing abundant physicochemical, electronic, and photoelectric properties in charge‐transporting‐layer‐free perovskite devices. …”
Publicado 2022
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4827por Lee, Minjong, Kim, Tae Wook, Park, Chang Yong, Lee, Kimoon, Taniguchi, Takashi, Watanabe, Kenji, Kim, Min-gu, Hwang, Do Kyung, Lee, Young Tack“…In this study, we demonstrate graphene (Gr)-bridge heterostructure devices consisting of laterally series-connected ambipolar semiconductor/Gr-bridge/n-type molybdenum disulfide as a channel material for field-effect transistors (FET). Unlike conventional FET operation, our Gr-bridge devices exhibit non-classical transfer characteristics (humped transfer curve), thus possessing a negative differential transconductance. …”
Publicado 2022
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4828por Yu, Craig P., Kojima, Naoya, Kumagai, Shohei, Kurosawa, Tadanori, Ishii, Hiroyuki, Watanabe, Go, Takeya, Jun, Okamoto, Toshihiro“…As a result, Cy(6)–BQQDI shows excellent device performances in both single-crystalline and polycrystalline thin-film organic field-effect transistors up to 2.3 and 1.0 cm(2) V(−1) s(−1), respectively.…”
Publicado 2021
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4829por Li, Xuanzhang, Wei, Yang, Wang, Zhijie, Kong, Ya, Su, Yipeng, Lu, Gaotian, Mei, Zhen, Su, Yi, Zhang, Guangqi, Xiao, Jianhua, Liang, Liang, Li, Jia, Li, Qunqing, Zhang, Jin, Fan, Shoushan, Zhang, Yuegang“…Two-dimensional (2D) semiconductors are promising in channel length scaling of field-effect transistors (FETs) due to their excellent gate electrostatics. …”
Publicado 2023
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4830por Song, Fan-Xin, Xu, Xiaojian, Ding, Hengze, Yu, Le, Huang, Haochen, Hao, Jinting, Wu, Chenghao, Liang, Rui, Zhang, Shaohua“…The novel urine cancer biomarkers are assisted by nanomaterials-based biosensors, such as field-effect transistors (FETs) with high sensitivity and specificity, which may provide solutions to these problems. …”
Publicado 2023
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4831por Wang, Jia, Ahmadi, Zahra, Lujan, David, Choe, Jeongheon, Taniguchi, Takashi, Watanabe, Kenji, Li, Xiaoqin, Shield, Jeffrey E., Hong, Xia“…The van der Waals magnets CrX(3) (X = I, Br, and Cl) exhibit highly tunable magnetic properties and are promising candidates for developing novel two‐dimensional (2D) spintronic devices such as magnetic tunnel junctions and spin tunneling transistors. Previous studies of the antiferromagnetic CrCl(3) have mainly focused on mechanically exfoliated samples. …”
Publicado 2022
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4832por Faraco, Thales Alves, Fontes, Marina de Lima, Paschoalin, Rafaella Takehara, Claro, Amanda Maria, Gonçalves, Isabella Salgado, Cavicchioli, Mauricio, de Farias, Renan Lira, Cremona, Marco, Ribeiro, Sidney José Lima, Barud, Hernane da Silva, Legnani, Cristiano“…As the development of nanotechnology progresses, organic electronics have gained momentum in recent years, and the production and rapid development of electronic devices based on organic semiconductors, such as organic light-emitting diodes (OLEDs), organic photovoltaic cells (OPVs), and organic field effect transistors (OFETs), among others, have excelled. Their uses extend to the fabrication of intelligent screens for televisions and portable devices, due to their flexibility and versatility. …”
Publicado 2023
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4833“…With the advent of a new 2D nanomaterial, namely, black phosphorus (BP) or phosphorene, the scientific community is now dedicated to focusing on and exploring this 2D material offering elusive properties such as a higher carrier mobility, biocompatibility, thickness-dependent band gap, and optoelectronic characteristics that can be harnessed for multiple applications, e.g., nanofillers, energy storage devices, field effect transistors, in water disinfection, and in biomedical sciences. …”
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4834por Schwenker, Benjamin“…A novel, two layer vertex detector composed of very thin, high resolution silicon pixel detectors based on Depleted Field Effect Transistors (DEPFET) is in production for Belle II. …”
Publicado 2014
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4835por Adamatzky, Andrew“…It is shown how to make logical gates and circuits, electronic devices (memristors, diodes, transistors, wires, chemical and tactile sensors) with the slime mould. …”
Publicado 2016
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4836por Liberali, Valentino“…It occupies a silicon area of 168 mm^2 and it contains about 421 millions transistors. The AM06 chip is able to perform a synchronous bitwise comparison of about 1 Mbit per second. …”
Publicado 2016
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4837por Kaplon, Jan“…Despite the enhanced functionality and greater number of transistors, higher time resolution and, in consequence, faster analog shaping and readout speed, the power consumption of typical front-end electronics measured per area of tracking detector remains of the order of a few tens of mW per square centimeter. …”
Publicado 2023
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4838por Ballabriga, R, Alozy, J A, Bandi, F N, Blaj, G, Campbell, M, Christodoulou, P, Coco, V, Dorda, A, Emiliani, S, Heijhoff, K, Heijne, E, Hofmann, T, Kaplon, J, Koukab, A, Kremastiotis, I, Llopart, X, Noy, M, Paterno, A, Piller, M, Sallesse, J M, Sriskaran, V, Tlustos, L, van Beuzekom, M“…The analog front-end circuit and the procedure to optimize the dimensions of the main transistors are described with detail. The Timepix4 is the most recent ASIC designed in the framework of the Medipix4 Collaboration. …”
Publicado 2023
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4839por Ghasemi-Varnamkhasti, Mahdi, Mohtasebi, Seyed Saeid, Siadat, Maryam, Balasubramanian, Sundar“…At present, the commercial gas sensor technologies comprise metal oxide semiconductors, metal oxide semiconductor field effect transistors, organic conducting polymers, and piezoelectric crystal sensors. …”
Publicado 2009
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4840“…Each delay cell consists of a few transistors enabling lower voltage operation. Since the oscillator is very sensitive to disturbances in the supply voltage and ground, a self-bias circuit for isolating the voltage disturbance is proposed to achieve bias voltages which can track the disturbances from the supply and ground. …”
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