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4881por Tsai, Ming-Hsiu, Lu, Yu-Xuan, Lin, Cheng-Yu, Lin, Chun-Hsuan, Wang, Chien-Chun, Chu, Che-Men, Woon, Wei-Yen, Lin, Chih-Ting“…To overcome this obstacle, a series of graphene field-effect transistors (GFETs) with suspended (substrate-free, SF) and supported (oxide-supported, OS) configurations are developed to investigate the graphene–water interface under different hydrophilic conditions. …”
Publicado 2023
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4882por Wang, Zixuan, Nie, Yecheng, Ou, Haohui, Chen, Dao, Cen, Yingqian, Liu, Jidong, Wu, Di, Hong, Guo, Li, Benxuan, Xing, Guichuan, Zhang, Wenjing“…Additionally, a novel transfer-free method is used to fabricate field-effect transistors (FETs) based on the as-grown WSe(2). The exceptional metal/semiconductor interfaces achieved through this fabrication method result in monolayer WSe(2) FETs with extraordinary electrical performance comparable to those with thermal deposition electrodes, with a high mobility of up to ≈62.95 cm(2) V(−1) s(−1) at room temperature. …”
Publicado 2023
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4883por Thirugnanam, Sargunam, Soong, Lim Way, Prabhu, Chinnaraj Munirathina, Singh, Ajay Kumar“…The E(2)VR11T cell comprises 11 transistors and operates with single-ended read and dynamic differential write circuits. …”
Publicado 2023
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4884por Brzozowski, Ernest, Kaminski, Maciej, Taube, Andrzej, Sadowski, Oskar, Krol, Krystian, Guziewicz, Marek“…Dielectrics, which were developed in this study, have been used to fabricate the 4H-SiC MOSFET transistors successfully.…”
Publicado 2023
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4885por Wang, Hao, Dong, Chaobo, Gui, Yaliang, Ye, Jiachi, Altaleb, Salem, Thomaschewski, Martin, Movahhed Nouri, Behrouz, Patil, Chandraman, Dalir, Hamed, Sorger, Volker J.“…Van der Waals (vdWs) heterostructures, assembled by stacking of two-dimensional (2D) crystal layers, have emerged as a promising new material system for high-performance optoelectronic applications, such as thin film transistors, photodetectors, and light-emitters. In this study, we showcase an innovative device that leverages strain-tuning capabilities, utilizing a MoS(2)/Sb(2)Te(3) vdWs p-n heterojunction architecture designed explicitly for photodetection across the visible to near-infrared spectrum. …”
Publicado 2023
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4886por Petsagkourakis, I., Riera‐Galindo, S., Ruoko, T.‐P., Strakosas, X., Pavlopoulou, E., Liu, X., Braun, S., Kroon, R., Kim, N., Lienemann, S., Gueskine, V., Hadziioannou, G., Berggren, M., Fahlman, M., Fabiano, S., Tybrandt, K., Crispin, X.“…The interfacial energetics are known to play a crucial role in organic diodes, transistors, and sensors. Designing the metal‐organic interface has been a tool to optimize the performance of organic (opto)electronic devices, but this is not reported for organic thermoelectrics. …”
Publicado 2023
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4887por Yoshida, Kou, Gong, Junyi, Kanibolotsky, Alexander L., Skabara, Peter J., Turnbull, Graham A., Samuel, Ifor D. W.“…They have been successfully used to make organic light-emitting diodes(2,4,5) (OLEDs, now widely found in mobile phone displays and televisions), solar cells(1), transistors(6) and sensors(7). However, making electrically driven organic semiconductor lasers is very challenging(8,9). …”
Publicado 2023
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4888“…In this article, the effects of microwave annealing (MWA) treatment on the sensing behaviors of Extended-Gate Field-Effect Transistors (EGFETs) utilizing HfO(2) as a sensing film have been investigated for the first time. …”
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4889por Deader, Firdous Ahmad, Abbas, Yawar, Qurashi, Ahsanulhaq, Al-Qutayri, Mahmoud, Chan, Vincent, Rezeq, Moh’d“…Thus, attaining single monolayers of these NPs would play a vital role in the improved characteristics of semiconductor devices such as nanosensors, field effect transistors, and energy harvesting devices. Developing nanosensors, for instance, requires precise methods to fabricate a monolayer of NPs on selected substrates for sensing and other applications. …”
Publicado 2023
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4890por Park, Sang Hyun, Kim, Tae Jin, Lee, Han Eol, Ma, Boo Soo, Song, Myoung, Kim, Min Seo, Shin, Jung Ho, Lee, Seung Hyung, Lee, Jae Hee, Kim, Young Bin, Nam, Ki Yun, Park, Hong-Jin, Kim, Taek-Soo, Lee, Keon Jae“…Finally, flexible micro light-emitting diodes and transistors with uniform electrical/optical properties are fabricated via micro-vacuum assisted selective transfer.…”
Publicado 2023
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4891por Awate, Shubham Sukumar, Xu, Ke, Liang, Jierui, Katz, Benjamin, Muzzio, Ryan, Crespi, Vincent H., Katoch, Jyoti, Fullerton-Shirey, Susan K.“…In this work, a gate-controlled and fully reversible 2H to 1T′ phase transition is demonstrated via strain in few-layer suspended MoTe(2) field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. …”
Publicado 2023
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4892por Kim, Moonkyung, Hwang, Jeonghyun, Shields, Virgil B, Tiwari, Sandip, Spencer, Michael G, Lee, Jo-Won“…Additionally, the field effect transistors have been fabricated on both Si-face-down and C-face-down showing an ambipolar behavior with more favorable electron conduction.…”
Publicado 2012
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4893por Montaigne Ramil, Alberto, Hernandez-Sosa, Gerardo, Griesser, Thomas, Simbrunner, Clemens, Höfler, Thomas, Trimmel, Gregor, Kern, Wolfgang, Shen, Quan, Teichert, Christian, Schwabegger, Günther, Sitter, Helmut, Sariciftci, Niyazi Serdar“…Two cases were investigated: the use of a blend of PPNB with poly-vinylcarbazole (PVK) as an interlayer in para-sexiphenyl (PSP) based organic light emitting diodes (OLEDs) and the use of PPNB as gate dielectric layer in organic field effect transistors (OFETs). The photo-Fries rearrangement reaction causes a change of the polymer chemical structure resulting in a change of its physical and chemical properties. …”
Publicado 2012
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4894por Li, Xufan, Lin, Ming-Wei, Puretzky, Alexander A., Idrobo, Juan C., Ma, Cheng, Chi, Miaofang, Yoon, Mina, Rouleau, Christopher M., Kravchenko, Ivan I., Geohegan, David B., Xiao, Kai“…These 2D GaSe crystals are potentially useful for next-generation electronic and optoelectronic devices such as photodetectors and field-effect transistors.…”
Publicado 2014
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4895por Padmaraj, Divya, Pande, Rohit, Miller, John H., Wosik, Jarek, Zagozdzon-Wosik, Wanda“…This BioMEMS chip includes: 1) electrodes for impedance studies of mitochondria designed as two- and four-probe structures for optimized operation over a wide frequency range and 2) ion-sensitive field effect transistors for proton studies of the electron transport chain and for possible monitoring other ions such as sodium, potassium and calcium. …”
Publicado 2014
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4896“…Single micro/nanocrystals based on π-conjugated organic molecules have caused tremendous interests in the optoelectronic applications in laser, optical waveguide, nonlinear optics, and field effect transistors. However, the controlled synthesis of these organic micro/nanocrystals with regular shapes is very difficult to achieve, because the weak interaction (van der Waals' force, ca. 5 kJ/mol) between organic molecules could not dominate the kinetic process of crystal growth. …”
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4897“…In this study, InGaZnO (IGZO) thin film transistors (TFTs) with a dual active layer (DAL) structure are fabricated by inserting a homogeneous embedded conductive layer (HECL) in an amorphous IGZO (a-IGZO) channel with the aim of enhancing the electrical characteristics of conventional bottom-gate-structure TFTs. …”
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4898por Sytnyk, Mykhailo, Głowacki, Eric Daniel, Yakunin, Sergii, Voss, Gundula, Schöfberger, Wolfgang, Kriegner, Dominik, Stangl, Julian, Trotta, Rinaldo, Gollner, Claudia, Tollabimazraehno, Sajjad, Romanazzi, Giuseppe, Bozkurt, Zeynep, Havlicek, Marek, Sariciftci, Niyazi Serdar, Heiss, Wolfgang“…As examples, phthalocyanine nanowire transistors as well as quinacridone nanocrystal photodetectors, with photoresponsivity values by far outperforming those of vacuum deposited reference samples, are demonstrated. …”
Publicado 2014
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4899por Dumcenco, Dumitru, Ovchinnikov, Dmitry, Marinov, Kolyo, Lazić, Predrag, Gibertini, Marco, Marzari, Nicola, Sanchez, Oriol Lopez, Kung, Yen-Cheng, Krasnozhon, Daria, Chen, Ming-Wei, Bertolazzi, Simone, Gillet, Philippe, Fontcuberta i Morral, Anna, Radenovic, Aleksandra, Kis, Andras“…Local potential mapping along channels in field-effect transistors shows that the single-crystal MoS(2) grains in our film are well connected, with interfaces that do not degrade the electrical conductivity. …”
Publicado 2015
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4900por Lee, Wookyu, Koo, Hyunmo, Sun, Junfeng, Noh, Jinsoo, Kwon, Kye-Si, Yeom, Chiseon, Choi, Younchang, Chen, Kevin, Javey, Ali, Cho, Gyoujin“…However, in recent years, pessimism has prevailed because of the barriers faced when attempting to fabricate and integrate thin film transistors (TFTs) using an R2R printing method. In this paper, we report 20 × 20 active matrices (AMs) based on single-walled carbon nanotubes (SWCNTs) with a resolution of 9.3 points per inch (ppi) resolution, obtained using a fully R2R gravure printing process. …”
Publicado 2015
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