“…[Image: see text] Biosensors based on graphene field effect transistors (GFETs) have the potential to enable the development of point-of-care diagnostic tools for early stage disease detection. …”
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“…[Image: see text] Conducting polymers are critically important materials in organic electronic platforms relevant to sustainability (organic photovoltaics and organic light-emitting diodes) and wearable electronics (organic electrochemical transistors). However, most chemistry students do not receive formal training in the fundamental properties and extensive characterization of these fascinating materials. …”
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“…Our approach works based on fixing the current bias of silicon nanowires Ion Sensitive Field Effect Transistors (ISFETs) and monitor the resulting drain voltage as the sensing signal. …”
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“…To achieve such performances, the voltage reference is designed in a suitable 130 nm Silicon-on-Insulator (SOI) industrial technology and is optimized to work in the subthreshold regime of the transistors. The design simulations have been performed over the temperature range of −40–200 °C and for different process corners. …”
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“…Spin transistors have attracted tremendous interest as new functional devices. …”
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“…Back-gate field effect transistors were fabricated with individual nanowires and the p-type electrical conductivity was measured with free hole concentration ranging from 2.7 × 10(16) cm(−3) to 1.4 × 10(17) cm(−3). …”
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“…Non-optical devices such as field-effect transistors can be more sensitive but do not offer some of the significant features of optical devices, particularly molecular fingerprinting. …”
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“…In addition, field effect transistors show an increase in mobilities with the OA treatment. …”
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“…Furthermore, the charge transport properties of these newly synthesized macromolecules have been approached by their implementation in organic field-effect transistors (OFETs) in order to assess their potential as active materials in organic optoelectronics.…”
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“…Demonstrator field-effect transistors (FETs) manufactured from the films exhibit mobility and on/off current ratios of 0.73 cm(2) V(–1) s(–1) and 10(5), respectively, comparable to FETs of similar layout and chemical vapor deposition (CVD)-grown or mechanically cleaved single-crystal MoS(2) channel material. …”
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“…Very recently, another new trend is the label-free, organic bioelectronic electrolyte-gated large transistors that can potentially be produced by means of large-area low-cost technologies and have been proven capable to detect a protein at the physical limit in real bovine serum. …”
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“…This ultrasmooth large area self-assembled layer could act as high-efficiency optoelectronic devices like solar cells, light-emitting diodes (LEDs), transistors, etc. We correlate our experimental results with simulations, providing detailed predictions for lattice constants with chain conformations showing reduced free energy for cubes grafted with short-chain thiocyanate compared to long-chain oleyl groups, thus facilitating better self-assembly.…”
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“…In this work, we show a compact, point-of-care-ready bioanalytical platform for screening of cytokines such as interleukin-4 (IL-4) and interleukin-2 (IL-2) based on one-dimensional ion-sensitive field-effect transistors arrays (nanoISFETs) of silicon fabricated at wafer-scale via nanoimprint lithography. …”
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“…In this paper, the optimizations of vertically-stacked horizontal gate-all-around (GAA) Si nanosheet (NS) transistors on bulk Si substrate are systemically investigated. …”
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“…[Image: see text] Despite the extensive ongoing research on MoS(2) field effect transistors (FETs), the key role of device processing conditions in the chemistry involved at the metal-to-MoS(2) interface and their influence on the electrical performance are often overlooked. …”
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“…This has been tested for the simple case of silica on silicon (SiO(2)/Si) which can serve as a model system to study gate oxides in metal-on-semiconductor field-effect transistors (MOS-FETs). Two possible implementations exist both of which rely on pairs of measurements to be made: in method A, the wafer piece of interest and a reference sample (here: ultra-clean fused quartz glass for calibration of the effective k-factors of X-ray lines from elements O and Si) are analysed at the same acceleration voltage. …”
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“…Here, we have prepared field-effect transistors using a series of these fullerene derivatives equipped with EG side chains of different lengths. …”
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“…[Image: see text] Sb-based semiconductors are critical p-channel materials for III–V complementary metal oxide semiconductor (CMOS) technology, while the performance of Sb-based metal-oxide-semiconductor field-effect transistors (MOSFETs) is typically inhibited by the low quality of the channel to gate dielectric interface, which leads to poor gate modulation. …”
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“…Gate Diffusion Input (GDI) logic is one of the prompting alternatives to CMOS logic to reduce transistors and low-power design. In this work, a novel energy and area efficient 1-bit GDI-based full swing Energy and Area efficient Full Adder (EAFA) with minimum error distance is proposed. …”
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“…Nanocellulose semiconductor properties are measured, and the resulting potential including single-electron transistors (SET) and their properties are modeled. …”
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