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  1. 5001
    “…Field-effect transistors (FETs) are attractive biosensor platforms for rapid and accurate detection of various analytes through surface immobilization of specific bio-receptors. …”
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    Fabrication of a Robust In(2)O(3) Nanolines FET Device as a Biosensor Platform
  2. 5002
    “…Time-resolved PL (TRPL) studies reveal significantly increased PL lifetimes, with pump intensity dependent TRPL measurements also confirming trap free PL dynamics in OA treated MoSe(2). Field effect transistors show reduced charge trap density and improved on–off ratios after treatment with OA. …”
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    Giant photoluminescence enhancement in MoSe(2) monolayers treated with oleic acid ligands
  3. 5003
    “…Silicon nanowire field-effect transistors (SiNW-FET) have been studied as ultra-high sensitive sensors for the detection of biomolecules, metal ions, gas molecules and as an interface for biological systems due to their remarkable electronic properties. …”
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    Process Variability in Top-Down Fabrication of Silicon Nanowire-Based Biosensor Arrays
  4. 5004
    “…Here, the response of Aerosol Jet-printed organic electrochemical transistors (OECTs), in the presence of either reduced (free) and oxidized Hcy-based solutions, was analyzed. …”
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    Homocysteine Solution-Induced Response in Aerosol Jet Printed OECTs by Means of Gold and Platinum Gate Electrodes
  5. 5005
    “…Recently, a few nanometers thick m-Gd(2)O(3) thin film has been successfully epitaxially grown on a GaN substrate as a promising candidate gate oxide in metal-oxide-semiconductor field-effect transistors (MOSFETs). Thus, it is important to understand the electronic excitations in m-Gd(2)O(3) and investigate them by electron energy loss spectroscopy (EELS) performed with aloof electron beams and electron diffraction to gain the spatial and momentum resolutions. …”
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    Investigation of the excitations of plasmons and surface exciton polaritons in monoclinic gadolinium sesquioxide by electron energy-loss spectroscopy and plasmon spectroscopic imaging
  6. 5006
    “…The linearity of active mixers is usually determined by the input transistors, and many works have been proposed to improve it by modified input stages at the cost of a more complex structure or more power consumption. …”
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    A 24-to-30 GHz Ultra-High-Linearity Down-Conversion Mixer for 5G Applications Using a New Linearization Method
  7. 5007
    “…These findings demonstrate that r-B/GaN and tr-B/ZnO vdW heterostructures are promising candidates for creating the element base of nanoelectronic devices, in particular, a conducting channel in field-effect transistors.…”
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    Novel Van Der Waals Heterostructures Based on Borophene, Graphene-like GaN and ZnO for Nanoelectronics: A First Principles Study
  8. 5008
    “…Using the MDC process, we fabricated wafer-scale n-type Ti(3)C(2)T(x)–MoS(2) van der Waals heterojunction transistors, achieving an average effective electron mobility of ∼40 cm(2)·V(–1)·s(–1), on/off current ratios exceeding 10(4), and subthreshold swings of under 200 mV·dec(–1). …”
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    Large-Area Metal–Semiconductor Heterojunctions Realized via MXene-Induced Two-Dimensional Surface Polarization
  9. 5009
    “…We expect to apply this structure to various heterojunctions, sensors, solar cells, and thin-film transistors.…”
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    Large area MoS(2) thin film growth by direct sulfurization
  10. 5010
    “…Indium-gallium-zinc oxide (IGZO) thin-film transistors and quantum dot photodiodes are integrated sequentially on the Si ROIC in a fully monolithic scheme with the introduction of photogate (PG) to achieve PPD operation. …”
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    A Thin-Film Pinned-Photodiode Imager Pixel with Fully Monolithic Fabrication and beyond 1Me- Full Well Capacity
  11. 5011
    “…CONCLUSION: The drift originated either at the dc input bias offset current (I(os)) of the integrated circuits, or in discrete transistors connected directly to the electrodes immersed in the cells, depending on the particular circuit arrangement. …”
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    Amplifier spurious input current components in electrode-electrolyte interface impedance measurements
  12. 5012
    “…These GaSe/MoSe(2) vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.…”
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    Two-dimensional GaSe/MoSe(2) misfit bilayer heterojunctions by van der Waals epitaxy
  13. 5013
    “…In the dark, the threshold voltage in the transfer characteristics of few-layer (FL) MoS(2) field-effect transistors (FETs) remained almost the same in vacuum and N(2) gas but shifted toward positive gate voltages in air or O(2) gas because of the adsorption of oxygen atoms/molecules on the MoS(2) surface. …”
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    Electrical and photo-electrical properties of MoS(2) nanosheets with and without an Al(2)O(3) capping layer under various environmental conditions
  14. 5014
    “…In order to implement the non-linear gating variables, which control the ionic channel currents, transistors operating in deep subthreshold are employed. …”
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    A 4-fJ/Spike Artificial Neuron in 65 nm CMOS Technology
  15. 5015
    “…This paper presents novel Neural Nanowire Field Effect Transistors (υ-NWFETs) based hardware-implementable neural network (HNN) approach for tactile data processing in electronic skin (e-skin). …”
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    Nanowire FET Based Neural Element for Robotic Tactile Sensing Skin
  16. 5016
    “…This work extends upon the series of detectors used by other authors to also include metal-oxide-semiconductor field-effect transistors (MOSFETs) detectors and radiochromic film. …”
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    Comparison of detector performance in small 6 MV and 6 MV FFF beams using a Versa HD accelerator
  17. 5017
    “…An investigation of charge carrier transport properties shows that P5 exhibits a moderately high hole mobility of 0.02 cm(2) V(−1) s(−1) in bottom-gate field-effect transistors (FETs) and a typical ambipolar transport behavior in top-gate FETs. …”
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    Low Bandgap Donor-Acceptor π-Conjugated Polymers From Diarylcyclopentadienone-Fused Naphthalimides
  18. 5018
    “…Solution-processed organic thin film transistors (OTFTs) are an essential building block for next-generation printed electronic devices. …”
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    Damage-free Metal Electrode Transfer to Monolayer Organic Single Crystalline Thin Films
  19. 5019
    “…In this context, our work aims to understand the origin of propagation losses in GaN-on-Si High Electron Mobility Transistors at microwaves frequencies, which are critical for efficient devices and circuits. …”
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    Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies
  20. 5020
    “…In particular, field-effect transistors and radiation detectors have been developed in the recent years, showing the potential for precision and sensitivity exceeding their normal-metal counterparts. …”
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    Microwave response of a metallic superconductor subject to a high-voltage gate electrode
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