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5021por Yu, Craig P., Kumagai, Shohei, Kushida, Tomokatsu, Mitani, Masato, Mitsui, Chikahiko, Ishii, Hiroyuki, Takeya, Jun, Okamoto, Toshihiro“…C(10)Ph–BNTP further shows enhanced mixed-orbital charge transport when the electronic couplings of all three occupied molecular orbitals are taken into consideration, which results in a high hole mobility up to 9.6 cm(2) V(–1) s(–1) in single-crystal thin-film organic field-effect transistors. The present study provides insights into the contribution of HOMO, SHOMO, and THOMO to the mixed-orbital charge transport of organic semiconductors.…”
Publicado 2022
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5022“…Due to the low cost and the scaling capability of Si substrate, InAlN/GaN high-electron-mobility transistors (HEMTs) on silicon substrate have attracted more and more attentions. …”
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5023por Taguchi, Koki, Uemura, Takafumi, Petritz, Andreas, Namba, Naoko, Akiyama, Mihoko, Sugiyama, Masahiro, Araki, Teppei, Stadlober, Barbara, Sekitani, Tsuyoshi“…However, the trade-off between low power consumption and high operating speed is a major bottleneck. Organic thin-film transistors (OTFTs) are suitable for developing flexible circuits owing to their intrinsic flexibility and compatibility with the printing process. …”
Publicado 2022
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5024por Mallard, Rémy“…Vous apprendrez à identifier les composants et leur rôle (résistances, condensateurs, bobines, diodes, transistors, relais, commutateurs...) mais aussi à les récupérer, les tester et les ranger. …”
Publicado 2012
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5025por Koch, Henri Dariusz“…This high radiation level is a concern for the electronics in the detectors as radiation damages the transistors. The integrated energy deposited by ionizing radiation, called total ionizing dose (TID), exceeds by several orders of magnitude the typical requirements for the main concerned industry, space (hundreds of Mrad(SiO2) vs. hundreds of krad(SiO2)). …”
Publicado 2018
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5026por Costanzo, Sebastiano“…We demonstrated with a set of experiments that this dose-rate dependency is found also in the modern transistors. We obtained interesting results regarding bias and temperature dependencies. …”
Publicado 2019
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5027por Obermann, Theresa“…The prototypes have 352 square pixels of 40 µm pitch and a small n-well charge collection node with very low capacitance of 5 fF (n+-implantation size: 5 µm x 5 µm) and about 150 transistors per pixel (CSA and discriminator plus a small digital part). …”
Publicado 2018
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5028por Chang, Sung-Jae, Kim, Dong-Seok, Kim, Tae-Woo, Bae, Youngho, Jung, Hyun-Wook, Choi, Il-Gyu, Noh, Youn-Sub, Lee, Sang-Heung, Kim, Seong-Il, Ahn, Ho-Kyun, Kang, Dong-Min, Lim, Jong-Won“…Recently, we reported that device performance degradation mechanisms, which are generated by the γ-ray irradiation in GaN-based metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs), use extremely thin gate insulators. …”
Publicado 2023
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5029por Bobinac, Josip, Reiter, Tobias, Piso, Julius, Klemenschits, Xaver, Baumgartner, Oskar, Stanojevic, Zlatan, Strof, Georg, Karner, Markus, Filipovic, Lado“…It is becoming quite evident that, when it comes to the further scaling of advanced node transistors, increasing the flash memory storage capacity, and enabling the on-chip integration of multiple functionalities, “there’s plenty of room at the top”. …”
Publicado 2023
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5030por Chlebosz, Dorota, Goldeman, Waldemar, Janus, Krzysztof, Szuster, Michał, Kiersnowski, Adam“…Testing the NDIs using standardized field-effect transistors and unified procedures revealed that the n-type mobility in NDIC6, NDIC7, and NDIC8 was 10- to 30-fold higher than for the NDIs with shorter or longer alkyl substituents. …”
Publicado 2023
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5031por Bahrehmand, Mohsen, Gacemi, Djamal, Vasanelli, Angela, Li, Lianhe, Davies, Alexander Giles, Linfield, Edmund, Sirtori, Carlo, Todorov, Yanko“…Charge-sensitive infrared photo-transistors (CSIP) are quantum detectors of mid-infrared radiation [Formula: see text] which have been reported to have outstanding figures of merit and sensitivities that allow single photon detection. …”
Publicado 2023
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5032“…Multi-gate field effect transistors (FETs) such as FinFETs are severely affected by short-channel effects (SCEs) below 14 nm technology nodes, with even taller fins incurring fringing capacitances. …”
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5033“…Because performing the experiment at the nanoscale is difficult and molecular dynamics simulation is also time-consuming, the potential application of the present study can be expected for the analysis, design, and development of nanoscale devices, such as circular gate transistors, etc.…”
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5034On Spike-Timing-Dependent-Plasticity, Memristive Devices, and Building a Self-Learning Visual Cortexpor Zamarreño-Ramos, Carlos, Camuñas-Mesa, Luis A., Pérez-Carrasco, Jose A., Masquelier, Timothée, Serrano-Gotarredona, Teresa, Linares-Barranco, Bernabé“…We will briefly extend the architectures to use three-terminal transistors with similar memristive behavior. We will illustrate how a V1 visual cortex layer can assembled and how it is capable of learning to extract orientations from visual data coming from a real artificial CMOS spiking retina observing real life scenes. …”
Publicado 2011
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5035“…In this paper we use a novel time-staggered Winner Take All circuit, that exploits the adaptation dynamics of floating gate transistors, to model an adaptive cortical cell that demonstrates Orientation Selectivity, a well-known biological phenomenon observed in the visual cortex. …”
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5036por Zhou, Hailong, Wang, Chen, Shaw, Jonathan C., Cheng, Rui, Chen, Yu, Huang, Xiaoqing, Liu, Yuan, Weiss, Nathan O., Lin, Zhaoyang, Huang, Yu, Duan, Xiangfeng“…Electrical transport studies further show that the p-type WSe(2) field-effect transistors exhibit excellent electronic characteristics with effective hole carrier mobility up to 100 cm(2) V(–1) s(–1) for monolayer and up to 350 cm(2) V(–1) s(–1) for few-layer materials at room temperature, comparable or well above that of previously reported mobility values for the synthetic WSe(2) and comparable to the best exfoliated materials.…”
Publicado 2014
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5037por Cheung, William, Patel, Mehulkumar, Ma, Yufeng, Chen, Yuan, Xie, Qiaoqiao, Lockard, Jenny V., Gao, Yuan, He, Huixin“…However, most sensing approaches such as field effect transistors or near infrared (NIR) fluorescence require the rigorous debundling and separation of metallic tubes and semiconducting tubes in order to reach the desired high sensitivity. …”
Publicado 2016
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5038“…The PNR is achieved by biasing the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET) of the cross-coupled pair at the deep-triode region periodically and incorporates an inductor and a cap-array as the mixer load. …”
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5039“…Here, we propose a novel pixel based SiRi device monolithically integrated with CMOS field-effect-transistors (FET) for real-time selective multiplexed detection. …”
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5040por Ariga, Katsuhiko, Nishikawa, Michihiro, Mori, Taizo, Takeya, Jun, Shrestha, Lok Kumar, Hill, Jonathan P.“…The research examples described in this review cover variously structured objects including molecular machines, molecular receptors, molecular pliers, molecular rotors, nanoparticles, nanosheets, nanotubes, nanowires, nanoflakes, nanocubes, nanodisks, nanoring, block copolymers, hyperbranched polymers, supramolecular polymers, supramolecular gels, liquid crystals, Langmuir monolayers, Langmuir–Blodgett films, self-assembled monolayers, thin films, layer-by-layer structures, breath figure motif structures, two-dimensional molecular patterns, fullerene crystals, metal–organic frameworks, coordination polymers, coordination capsules, porous carbon spheres, mesoporous materials, polynuclear catalysts, DNA origamis, transmembrane channels, peptide conjugates, and vesicles, as well as functional materials for sensing, surface-enhanced Raman spectroscopy, photovoltaics, charge transport, excitation energy transfer, light-harvesting, photocatalysts, field effect transistors, logic gates, organic semiconductors, thin-film-based devices, drug delivery, cell culture, supramolecular differentiation, molecular recognition, molecular tuning, and hand-operating (hand-operated) nanotechnology.…”
Publicado 2019
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