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5061“…A pair of radiation dosimeters (RadFETs, i.e., radiation-sensitive field-effect transistors) within the SESLO payload provided an in-situ dose rate estimate of 6–7.6 mGy/day throughout the mission. …”
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5062por Dutta, Sourav, Schafer, Clemens, Gomez, Jorge, Ni, Kai, Joshi, Siddharth, Datta, Suman“…Recently, ferroelectric field-effect transistors (FeFETs) are being explored as a promising alternative for building neuromorphic hardware by utilizing their non-volatile nature and rich polarization switching dynamics. …”
Publicado 2020
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5063por Zhuang, Wenliu, Wang, Suhao, Tao, Qiang, Ma, Wei, Berggren, Magnus, Fabiano, Simone, Zhu, Weiguo, Wang, Ergang“…Finally, we correlate the molecular packing to the device performance by fabricating field-effect transistors based on these two polymers. The charge carrier mobility of the ring-fused polymer PBDTT-DPPFu is significantly higher as compared to the PBDTT-DPP polymer without ring-fusion, although PBDTT-DPPFu exhibited a much lower number-average molecular weight of 17 kDa as compared to PBDTT-DPP with a molecular weight of 108 kDa. …”
Publicado 2021
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5064por Abrantes, Mafalda, Rodrigues, Diana, Domingues, Telma, Nemala, Siva S., Monteiro, Patricia, Borme, Jérôme, Alpuim, Pedro, Jacinto, Luis“…High-yield scalable methodologies optimized at the wafer level were employed to integrate multiple graphene transistors on small-size chips (4.5 × 4.5 mm). The multiple sensor array configuration permits independent and simultaneous replicate measurements of the same sample that produce robust average data, reducing sources of measurement variability. …”
Publicado 2022
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5065por Strolin, Silvia, Paolani, Giulia, Santoro, Miriam, Cercenelli, Laura, Bortolani, Barbara, Ammendolia, Ilario, Cammelli, Silvia, Cicoria, Gianfranco, Win, Phyo Wai, Morganti, Alessio G., Marcelli, Emanuela, Strigari, Lidia“…In vivo dosimetry, using Metal-Oxide Field-Effect Transistors (MOSFETs), was used to assess the setup reproducibility in both supine and prone positions. …”
Publicado 2023
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5066por Alhasani, Reem, Yabe, Taichi, Iyama, Yutaro, Oi, Nobutaka, Imanishi, Shoichiro, Nguyen, Quang Ngoc, Kawarada, Hiroshi“…Though the complementary power field effect transistors (FETs), e.g., metal–oxide–semiconductor-FETs (MOSFETs) based on wide bandgap materials, enable low switching losses and on-resistance, p-channel FETs are not feasible in any wide bandgap material other than diamond. …”
Publicado 2022
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5067“…The performance and effectiveness of nanoscale devices, including transistors, solar cells, artificial antennas, quantum computers, and nano electronic circuits, must be improved in order to achieve a variety of benefits.…”
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5068por Ballabriga, Rafael“…The chip was designed and manufactured in an 8-metal $0.13\mu m$ CMOS technology. It contains ~115M transistors. Measurements show an Equivalent Noise Charge of ~70e- rms (Single Pixel Mode) and ~140e- rms (Charge Summing Mode).…”
Publicado 2009
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5069por López-Tarjuelo, Juan, Morillo-Macías, Virginia, Bouché-Babiloni, Ana, Boldó-Roda, Enrique, Lozoya-Albacar, Rafael, Ferrer-Albiach, Carlos“…METHODS: Reinforced TN-502RDM-H mobile metal oxide semiconductor field effect transistors (MOSFETs) and Gafchromic MD-55-2 films were used as a redundant in vivo treatment verification system with an Elekta Precise fixed linear accelerator for calibrations and treatments. …”
Publicado 2016
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5070por Fioravanti, Niko, Pierantoni, Luca, Mencarelli, Davide, Turchetti, Claudio, Hamao, Shino, Okamoto, Hideki, Goto, Hidenori, Eguchi, Ritsuko, Fujiwara, Akihiko, Kubozono, Yoshihiro“…Organic field-effect transistors (FETs) can be applied to radio-frequency identification tags (RFIDs) and active-matrix flat-panel displays. …”
Publicado 2021
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5071“…By varying the orientation of the embedded dipolar moieties, it is also possible to build p- and n-type organic transistors using the same electrode materials (Au). …”
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5072por Du, YiKuan, He, LuLu, Ye, XinNi, Chen, ShuZhen, Li, GuanHao, Yu, YuanWei, Ye, ErBai, Huang, YiXing, Zhou, YuQi, Zhang, WeiChui, Yang, Chun“…Eight hub genes including interleukin-6 (IL-6), interleukin-10 (IL-10), Toll-like receptor 4 (TLR4), signal transduction and transcriptional activation factor 3 (STAT3), C-X-C motif chemokine 10 (CXCL10), interleukin-17A (IL-17A), prostaglandin peroxide synthesis-2 (PTGS2), signal transistors, and transcriptional activation factor 6 (STAT6) were identified by gene ontology (GO), Kyoto Encyclopedia of Genes (KEGG), and PPI network analysis. …”
Publicado 2022
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5073por Trung, Nguyen Dinh, Huy, Dinh Tran Ngoc, Jade Catalan Opulencia, Maria, Lafta, Holya A., Abed, Azher M., Bokov, Dmitry Olegovich, Shomurodov, Kahramon, Van Thuc Master, Hoang, Thaeer Hammid, Ali, Kianfar, Ehsan“…This property can be used in various nanoelectronic applications such as field-effect organic transistors, organic solar cells, and sensors to detect explosives. …”
Publicado 2022
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5074por Staufer, Oskar, Weber, Sebastian, Bengtson, C Peter, Bading, Hilmar, Spatz, Joachim P, Rustom, Amin“…Nat Nanotechnol. 2012, 10, 180–184) or NW field-effect transistors (Qing, Q.; Jiang, Z.; Xu, L.; Gao, R.; Mai, L.; Lieber, C. …”
Publicado 2016
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5075por Al-Azzawi, Ahmed G. S., Aziz, Shujahadeen B., Dannoun, Elham M. A., Iraqi, Ahmed, Nofal, Muaffaq M., Murad, Ary R., M. Hussein, Ahang“…Along with plastic solar cells (PSCs), these materials have extended to a number of different applications such as light-emitting diodes (LEDs) and field-effect transistors (FETs). Additionally, the topics of fluorene and carbazole as donor units in conjugated polymers are covered. …”
Publicado 2022
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5076por Kundumattathil Mohanan, Sarath“…The use of thick gate transistors in the leakage critical analog path, optimal feedback capacitance and three stepped progressive charge balancing with 500 fC, 1 pC, and 4 pC charge paths helped in achieving this performance. …”
Publicado 2022
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5077por Torres Ramos, Arianna Grisel“…$\newline$ Another subject, within the context of the ITS upgrade R&D, is the prelim- inary study of new sensor prototypes based on TPSCo 65 nm CMOS process, the first choice of the technology for the implementation of the wafer-scale sen- sor, which allows for more than four-fold increase of the number of transistors per pixel compared to the older 180 nm and higher spatial resolution resulting from the possibility to fabricate smaller pixels. …”
Publicado 2023
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5078por Dinapoli, Roberto“…En particulier, le circuit ALICE1LHCb (ou Circuit Pixel) contient une matrice de 32 par 256 cellules de lecture (pour un total de 13 millions de transistors), mesurant 13.5 par 15.8 mm2. Des groupes de cinq circuits sont reliés électriquement par une technique de contact entre circuits sur des puces différentes, réalisés au moyen de rangées de billes métalliques microscopiques («bump-bonding»,). …”
Publicado 2004
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