Materias dentro de su búsqueda.
Materias dentro de su búsqueda.
Circuitos de transistores
28
Transistores
21
Semiconductores
14
Electrónica
8
Circuitos integrados
7
Transistores de efecto de campo
7
Circuitos electrónicos
6
Diseño y construcción
4
Electrónica digital
4
Transistores de unión
4
Amplificadores de transistores
3
Diodos semiconductores
3
Ingeniería
3
Transistores bipolares
3
Circuitos electronicos
2
Circuitos eléctricos
2
Circuitos integrados lineales
2
Diodos
2
Diseño de circuitos electrónicos
2
Historia
2
Semiconductores de metal-óxido complementarios
2
Ciencia
1
Circuitos impresos
1
Circuitos integrados digitales
1
Circuitos lógicos
1
Circuitos lógicos Transistor-transistor
1
Circuitos transistorizados
1
Comunicación intercultural
1
Comunicación y cultura
1
Comunidades indígenas y medios de comunicación de masas
1
-
541“…Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
542por Gehring, Pascal, Sowa, Jakub K., Cremers, Jonathan, Wu, Qingqing, Sadeghi, Hatef, Sheng, Yuewen, Warner, Jamie H., Lambert, Colin J., Briggs, G. Andrew D., Mol, Jan A.Enlace del recurso
Publicado 2017
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
543“…Electric-double-layer (EDL) thin-film transistors (TFTs) have attracted much attention due to their low operation voltages. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
544por Yoon, Jinsu, Lim, Meehyun, Choi, Bongsik, Kim, Dong Myong, Kim, Dae Hwan, Kim, Sungho, Choi, Sung-Jin“…Carbon nanotubes (CNTs) used as semiconducting channels induce high mobility, thermal conductivity, mechanical flexibility, and chemical stability in field-effect, thin-film transistors (TFTs). However, the contact interfaces in CNT-TFTs have contact resistances that are difficult to reduce; this contact resistance can eventually limit the overall performance of CNT-TFTs. …”
Publicado 2017
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
545
-
546por Tan, Yaohua, Elahi, Mirza M., Tsao, Han-Yu, Habib, K. M. Masum, Barker, N. Scott, Ghosh, Avik W.“…We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. …”
Publicado 2017
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
547“…A magneto-electrochemical cell and an electric double layer transistor (EDLT), each containing diluted [Bmim]FeCl(4) solution, have been controlled by applying a magnetic field in contrast to the control of conventional field effect devices by an applied electric field. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
548por Ren, Ren, Zhang, Yanjun, Nadappuram, Binoy Paulose, Akpinar, Bernice, Klenerman, David, Ivanov, Aleksandar P., Edel, Joshua B., Korchev, Yuri“…Herein, some of these challenges are addressed by designing a new class of nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advantages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry. …”
Publicado 2017
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
549“…In this study, we demonstrate the static random access memory (SRAM) characteristics generated by weak impact ionization in bendable field-effect transistors (FETs) with n(+)-p-n(+) silicon nanowire (SiNW) channels. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
550“…High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ(FE)) of 7.6 cm(2)/Vs, 140 mV/dec subthreshold slope, and 3 × 10(4) on-current/off-current were measured. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
551“…This study aims to design an all-optical transistor based on tunneling of light through frustrated total internal reflection. …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
552por Marchiori, Bastien, Delattre, Roger, Hannah, Stuart, Blayac, Sylvain, Ramuz, Marc“…We describe a process allowing the patterning of fully stretchable organic electrochemical transistors (OECTs). The device consists of an active stretchable area connected with stretchable metallic interconnections. …”
Publicado 2018
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
553
-
554por Kang, Heung Seok, Lee, Kang-Hee, Yang, Dong-Youk, You, Byoung Hee, Song, In-Hyouk“…A vertically movable gate field effect transistor (VMGFET) is proposed and demonstrated for a micro-accelerometer application. …”
Publicado 2015
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
555
-
556por Lamport, Zachary A., Barth, Katrina J., Lee, Hyunsu, Gann, Eliot, Engmann, Sebastian, Chen, Hu, Guthold, Martin, McCulloch, Iain, Anthony, John E., Richter, Lee J., DeLongchamp, Dean M., Jurchescu, Oana D.“…Here, we demonstrate a simple and efficient strategy for reducing the contact resistance in organic thin-film transistors by more than an order of magnitude by creating high work function domains at the surface of the injecting electrodes to promote channels of enhanced injection. …”
Publicado 2018
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
557por Abodunrin, Temitope, Boyo, Adenike, Usikalu, Mojisola, Emetere, Moses, Ajayi, Oluseyi, Kotsedi, Chester, Nuru, Zebib, Malik, Maaza, Oghonyon, Godwin“…This aim was accomplished through computations of efficiency of different DSCs based on n-Mosfet transistor. Transistor Z44 mosfet's impact on the DSC systems was to significantly moderate the effect of two vital components namel; the photoanodes and electrolyte sensitizers. …”
Publicado 2018
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
558por Islam, Saurav, Shukla, Shruti, Bajpai, Vivek K., Han, Young-Kyu, Huh, Yun Suk, Ghosh, Arindam, Gandhi, Sonu“…Therefore, in this study, a highly sensitive and robust biosensor platform was devised by fabricating graphene field effect transistors (graFET) on Si/SiO(2) substrate for the detection of chlorpyrifos in real samples. …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
559“…In this work, we investigate both one-dimensional ZnO nanowires (NWs) and two-dimensional nanosheets (NSs) for high performance and stable nano-transistors on conventional Si/SiO(2) substrates. We have fabricated two variant of transistors based on nanoscale single-crystalline oxide materials: field-effect transistors (FETs) and source-gated transistors (SGTs). …”
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto -
560por Pullano, Salvatore A., Tasneem, Nishat T., Mahbub, Ifana, Shamsir, Samira, Greco, Marta, Islam, Syed K., Fiorillo, Antonino S.“…Extended-gate field-effect transistor (EGFET) is an electronic interface originally developed as a substitute for an ion-sensitive field-effect transistor (ISFET). …”
Publicado 2019
Enlace del recurso
Enlace del recurso
Enlace del recurso
Online Artículo Texto