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681por Jun, Byoung Ok, Lee, Gwang Jun, Kang, Jong Gu, Kim, Seunguk, Choi, Ji-Woong, Cha, Seung Nam, Sohn, Jung Inn, Jang, Jae Eun“…A wireless thin film transistor (TFT) structure in which a source/drain or a gate is connected directly to a micro antenna to receive or transmit signals or power can be an important building block, acting as an electrical switch, a rectifier or an amplifier, for various electronics as well as microelectronics, since it allows simple connection with other devices, unlike conventional wire connections. …”
Publicado 2015
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682“…Nanowires are considered building blocks for the ultimate scaling of MOS transistors, capable of pushing devices until the most extreme boundaries of miniaturization thanks to their physical and geometrical properties. …”
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683por Stoop, Ralph L., Wipf, Mathias, Müller, Steffen, Bedner, Kristine, Wright, Iain A., Martin, Colin J., Constable, Edwin C., Fanget, Axel, Schönenberger, Christian, Calame, Michel“…To monitor these ions, inexpensive, label-free chemical sensing devices are needed. Field-effect transistors (FETs) based on silicon (Si) nanowires or nanoribbons (NRs) have a great potential as future biochemical sensors as they allow for the integration in microscopic devices at low production costs. …”
Publicado 2016
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684“…Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed.…”
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685“…To explore the intrinsic properties and enhance the performance of MoS(2)-based field-effect transistors, thorough understanding of extrinsic effects such as environmental gas and contact resistance of the electrodes is required. …”
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686por Liu, Chuan, Huseynova, Gunel, Xu, Yong, Long, Dang Xuan, Park, Won-Tae, Liu, Xuying, Minari, Takeo, Noh, Yong-Young“…The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. …”
Publicado 2016
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687por Frank, Philipp, Schreiter, Joerg, Haefner, Sebastian, Paschew, Georgi, Voigt, Andreas, Richter, Andreas“…Inspired by the development electronics, our approach focuses on the development of single transistor-like components, which have the potential to be used in an integrated circuit technology. …”
Publicado 2016
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688por Lan, Yann-Wen, Torres, Jr., Carlos M., Zhu, Xiaodan, Qasem, Hussam, Adleman, James R., Lerner, Mitchell B., Tsai, Shin-Hung, Shi, Yumeng, Li, Lain-Jong, Yeh, Wen-Kuan, Wang, Kang L.“…To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (V(CB) > 0) as is necessary for the typical unipolar hot-electron transistor behavior. …”
Publicado 2016
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689“…Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. …”
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690por Lyu, Hongming, Lu, Qi, Liu, Jinbiao, Wu, Xiaoming, Zhang, Jinyu, Li, Junfeng, Niu, Jiebin, Yu, Zhiping, Wu, Huaqiang, Qian, He“…As a result, maximum oscillation frequency (f(max)) which indicates transistors’ power amplification ability has been disappointing. …”
Publicado 2016
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691por Contat-Rodrigo, Laura, Pérez-Fuster, Clara, Lidón-Roger, José Vicente, Bonfiglio, Annalisa, García-Breijo, Eduardo“…A novel screen-printing fabrication method was used to prepare organic electrochemical transistors (OECTs) based on poly(3,4-ethylenedioxythiophene) doped with polysterene sulfonate (PEDOT:PSS). …”
Publicado 2016
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693por Karnatak, Paritosh, Sai, T. Phanindra, Goswami, Srijit, Ghatak, Subhamoy, Kaushal, Sanjeev, Ghosh, Arindam“…The impact of the intrinsic time-dependent fluctuations in the electrical resistance at the graphene–metal interface or the contact noise, on the performance of graphene field-effect transistors, can be as adverse as the contact resistance itself, but remains largely unexplored. …”
Publicado 2016
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694por Kim, Youn, Kwon, Yeon Ju, Lee, Kang Eun, Oh, Youngseok, Um, Moon-Kwang, Seong, Dong Gi, Lee, Jea Uk“…Furthermore, the textile transistors exhibited highly stable device performance under extended bending conditions (with a bending radius down to 3 mm and repeated tests over 1000 cycles). …”
Publicado 2016
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695“…We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. …”
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696por Manoharan, Arun Kumar, Chinnathambi, Shanmugavel, Jayavel, Ramasamy, Hanagata, Nobutaka“…In this study a monolayer graphene field effect transistor (GFET) was fabricated for the detection of a particular single-stranded DNA (target DNA). …”
Publicado 2017
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697“…Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. …”
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698por Chai, Yu, Su, Shanshan, Yan, Dong, Ozkan, Mihrimah, Lake, Roger, Ozkan, Cengiz S.“…To make an analogy of the strain-gated silicon MOSFET, strain is exerted to a bilayer MoS(2) field effect transistor (FET) through deposition of a silicon nitride stress liner that warps both the gate and the source-drain area. …”
Publicado 2017
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699por Klinger, Markus P., Fischer, Axel, Kaschura, Felix, Widmer, Johannes, Kheradmand-Boroujeni, Bahman, Ellinger, Frank, Leo, Karl“…In spite of interesting features as flexibility, organic thin-film transistors have commercially lagged behind due to the low mobilities of organic semiconductors associated with hopping transport. …”
Publicado 2017
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700Concentric-Electrode Organic Electrochemical Transistors: Case Study for Selective Hydrazine Sensingpor Pecqueur, Sébastien, Lenfant, Stéphane, Guérin, David, Alibart, Fabien, Vuillaume, Dominique“…We report on hydrazine-sensing organic electrochemical transistors (OECTs) with a design consisting of concentric annular electrodes. …”
Publicado 2017
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