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781por Wen, Shaofeng, Lan, Changyong, Li, Chun, Zhou, Sihan, He, Tianying, Zhang, Rui, Zou, Ruisen, Hu, Hao, Yin, Yi, Liu, Yong“…However, the performance of field effect transistors (FETs) based on 2D materials is always environment-dependent and unstable under gate bias stress. …”
Publicado 2021
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783por Wang, Bo, Zhao, Chuanzhen, Wang, Zhaoqing, Yang, Kyung-Ae, Cheng, Xuanbing, Liu, Wenfei, Yu, Wenzhuo, Lin, Shuyu, Zhao, Yichao, Cheung, Kevin M., Lin, Haisong, Hojaiji, Hannaneh, Weiss, Paul S., Stojanović, Milan N., Tomiyama, A. Janet, Andrews, Anne M., Emaminejad, Sam“…To overcome this and other limitations, we developed a flexible field-effect transistor (FET) biosensor array that exploits a previously unreported cortisol aptamer coupled to nanometer-thin-film In(2)O(3) FETs. …”
Publicado 2022
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784por Ren, Huihui, Xu, Tengyan, Liang, Kun, Li, Jiye, Fang, Yu, Li, Fanfan, Chen, Yitong, Zhang, Hongyue, Li, Dingwei, Tang, Yingjie, Wang, Yan, Song, Chunyan, Wang, Huaimin, Zhu, Bowen“…Herein, high-performance tyrosinase-sensing field-effect transistor-based biosensors (bio-FETs) have been successfully achieved by self-assembling nanostructured tetrapeptide tryptophan–valine–phenylalanine–tyrosine (WVFY) on n-type metal oxide transistors. …”
Publicado 2021
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785por Surekcigil Pesch, Isin, Bestelink, Eva, de Sagazan, Olivier, Mehonic, Adnan, Sporea, Radu A.“…Here, we show how the multimodal transistor’s (MMT’s) transfer characteristic, with linear dependence in saturation, replicates the rectified linear unit (ReLU) activation function of convolutional ANNs (CNNs). …”
Publicado 2022
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786por Abarkan, Myriam, Pirog, Antoine, Mafilaza, Donnie, Pathak, Gaurav, N'Kaoua, Gilles, Puginier, Emilie, O'Connor, Rodney, Raoux, Matthieu, Donahue, Mary J., Renaud, Sylvie, Lang, Jochen“…Organic electrochemical transistors (OECT) have proven their capacity to capture neuronal and cardiac signals with high fidelity and amplification. …”
Publicado 2022
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787por Meng, Linan, Xin, Na, Hu, Chen, Sabea, Hassan Al, Zhang, Miao, Jiang, Hongyu, Ji, Yiru, Jia, Chuancheng, Yan, Zhuang, Zhang, Qinghua, Gu, Lin, He, Xiaoyan, Selvanathan, Pramila, Norel, Lucie, Rigaut, Stéphane, Guo, Hong, Meng, Sheng, Guo, Xuefeng“…As conventional silicon-based transistors are fast approaching the physical limit, it is essential to seek alternative candidates, which should be compatible with or even replace microelectronics in the future. …”
Publicado 2022
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788“…With the growing demand for bio- and eco-friendly artificial synapses, we propose a novel synaptic transistor using natural bovine-milk-based biocompatible polymers as an electrical double layer (EDL). …”
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789por Yang, Jie, Jiang, Yaqian, Zhao, Zhiyuan, Yang, Xueli, Zhang, Zheye, Chen, Jinyang, Li, Junyu, Shi, Wei, Wang, Shuai, Guo, Yunlong, Liu, Yunqi“…Ambipolar polymer semiconductors are potentially serviceable for logic circuits, light-emitting field-effect transistors (LFETs) and polymer solar cells (PSCs). …”
Publicado 2021
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790por Krsihna, B. Vamsi, Gangadhar, A., Ravi, S., Mohan, D., Panigrahy, Asisa Kumar, Rajeswari, V. Raja, Prakash, M. Durga“…Biomedical applications adapt Nano technology-based transistors as a key component in the biosensors for diagnosing life threatening diseases like Covid-19, Acute myocardial infarction (AMI), etc. …”
Publicado 2022
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791“…However, most of the reported MoS(2) phototransistors have adopted a back-gate field-effect transistor (FET) structure, requiring applied gate bias voltages as high as 70 V, which made it impossible to modulate each detecting device in the fabricated array. …”
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792por Li, Enlong, Gao, Changsong, Yu, Rengjian, Wang, Xiumei, He, Lihua, Hu, Yuanyuan, Chen, Huajie, Chen, Huipeng, Guo, Tailiang“…Vertical transistors have attracted enormous attention in the next-generation electronic devices due to their high working frequency, low operation voltage and large current density, while a major scientific and technological challenge for high performance vertical transistor is to find suitable source electrode. …”
Publicado 2022
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793por Gao, Xiangxiang, Liu, Hai-Yang, Zhang, Jincheng, Zhu, Jian, Chang, Jingjing, Hao, Yue“…Layer-by-layer (LbL) assembly was used to fabricate scalable and uniform In(2)Se(3) thin films by coordinating In(2)Se(3) with poly(diallyldimethylammonium chloride) (PDDA). Field-effect transistors (FETs) made from a single In(2)Se(3) flake and In(2)Se(3) thin films showed mobilities of 12.8 cm(2)·V(−1)·s(−1) and 0.4 cm(2)·V(−1)·s(−1), respectively, and on/off ratios of >10(3). …”
Publicado 2022
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794por Saminathan, Rajasekaran, Hadidi, Haitham, Tharwan, Mohammed, Alnujaie, Ali, Khamaj, Jabril A., Venugopal, Gunasekaran“…In this paper, we report the simple preparation and investigation of electrical transport properties of nanoform MoS(2) thin film transistor (TFT) devices. MoS(2) nanoparticles were synthesized by using the hydrothermal method. …”
Publicado 2022
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795“…Absorption spectroscopy, electrochemistry, X-ray diffraction, molecular theoretical simulation calculation were performed, and organic field-effect transistor properties based on PPAB were investigated. …”
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796“…Microstructural control during the solution processing of small-molecule semiconductors (namely, soluble acene) is important for enhancing the performance of field-effect transistors (FET) and sensors. This focused review introduces strategies to enhance the gas-sensing properties (sensitivity, recovery, selectivity, and stability) of soluble acene FET sensors by considering their sensing mechanism. …”
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797por Kumar, Prashanth, Esakki, Papanasam, Agarwal, Lucky, PeddaKrishna, Kale, Sumit, Bhowmick, Brinda“…In this review, we explored the modern development of schottky field effect transistor (SK FET) structures and the improvement of sensitivity of nanowire sensors using dielectric modulation. …”
Publicado 2022
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798“…In this study, we proposed a synaptic transistor using an emerging biocompatible organic material, namely, the casein electrolyte as an electric-double-layer (EDL) in the transistor. …”
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800“…In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region. …”
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