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801por Liu, Xuerong, Sun, Cui, Guo, Zhecheng, Zhang, Yuejun, Zhang, Zheng, Shang, Jie, Zhong, Zhicheng, Zhu, Xiaojian, Yu, Xue, Li, Run-Wei“…While previous studies are mostly focused on the emulation of the basic memory functions of homo-synapses using single-gate transistors, multi-gate transistors offer opportunities for the mimicry of more complex and advanced memory formation behaviors in biological hetero-synapses. …”
Publicado 2022
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802por Wiecha, Matthias M., Kapoor, Rohit, Chernyadiev, Alexander V., Ikamas, Kęstutis, Lisauskas, Alvydas, Roskos, Hartmut G.“…We report the successful implementation of antenna-coupled terahertz field-effect transistors (TeraFETs) as homodyne detectors in a scattering-type scanning near-field optical microscope (s-SNOM) operating with radiation at 246.5 GHz. …”
Publicado 2021
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803“…Since its discovery, graphene has attracted much attention due to its unique electrical transport properties that can be applied to high-performance field-effect transistors (FETs). However, mounting chemical functionalities onto graphene inevitably involves the breaking of sp(2) bonds, resulting in the degradation of the mechanical and electrical properties compared to pristine graphene. …”
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804por Namgung, Seok Daniel, Kim, Ryeong Myeong, Lim, Yae-Chan, Lee, Jong Woo, Cho, Nam Heon, Kim, Hyeohn, Huh, Jin-Suk, Rhee, Hanju, Nah, Sanghee, Song, Min-Kyu, Kwon, Jang-Yeon, Nam, Ki Tae“…Here, we demonstrate a highly efficient CPL-detecting transistor composed of chiral plasmonic nanoparticles with a high Khun’s dissymmetry (g-factor) of 0.2 and a high mobility conducting oxide of InGaZnO. …”
Publicado 2022
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805por Chen, Yusheng, Wang, Hanlin, Luo, Feng, Montes-García, Verónica, Liu, Zhaoyang, Samorì, Paolo“…Multiresponsive long afterglow emission can be achieved by integrating light-emitting polymers in electric spiked transistors trigged by distinct presynaptic signals inputs. …”
Publicado 2022
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806“…High-performance and low-power field-effect transistors (FETs) are the basis of integrated circuit fields, which undoubtedly require researchers to find better film channel layer materials and improve device structure technology. …”
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807“…Here, we show that a monolithically integrated photovoltaic transistor can solve this dilemma. In this structure, the photovoltage generated by the superimposed perovskite solar cell, acting as a float gate, is amplified by the underlying metal oxide field-effect transistor. …”
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808por Choi, Haeju, Li, Jinshu, Kang, Taeho, Kang, Chanwoo, Son, Hyeonje, Jeon, Jongwook, Hwang, Euyheon, Lee, Sungjoo“…The Fermi-Dirac distribution of carriers and the drift-diffusion mode of transport represent two fundamental barriers towards the reduction of the subthreshold slope (SS) and the optimization of the energy consumption of field-effect transistors. In this study, we report the realization of steep-slope impact ionization field-effect transistors (I(2)FETs) based on a gate-controlled homogeneous WSe(2) lateral junction. …”
Publicado 2022
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809“…This paper focuses on applying carbon nanotube field-effect transistor (CNT-FET) biochemical sensors to detect biomarkers. …”
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810por Attar, Salahuddin, Yang, Rui, Chen, Zhihui, Ji, Xiaozhou, Comí, Marc, Banerjee, Sarbajit, Fang, Lei, Liu, Yao, Al-Hashimi, Mohammed“…The optical, electronic, and thermal properties, in addition to their charge transport behavior in organic thin-film transistors (OTFTs), were investigated. The results showed an interesting effect on the molecular arrangement of the thiazole-based ladder-type heteroacene in the crystal structure revealing skewed π–π-stacking, and expected to possess better p-type semiconducting performance. …”
Publicado 2022
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811“…Thin-film transistors have been extensively developed due to their process merit: high compatibility with various substrates, large-area processes, and low-cost processes. …”
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812por Hemmi, Yudai, Ikeda, Yuji, Sporea, Radu A., Takeda, Yasunori, Tokito, Shizuo, Matsui, Hiroyuki“…Source-gated transistors (SGTs) are emerging devices enabling high-gain single-stage amplifiers with low complexity. …”
Publicado 2022
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813“…This review discusses the operation mechanism, function and application of neuromorphic transistors. The latest progresses in artificial perception systems based on neuromorphic transistors are provided. …”
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814“…In this work, three silanization approaches and two types of biorecognition elements were used on the silicon nanowire field-effect transistors (SiNW-FETs) to investigate and compare the sensing performance on the detection of IL-6. …”
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815por Bhatt, Suyash, Masterson, Emily, Zhu, Tianxiang, Eizadi, Jenna, George, Judy, Graupe, Nesya, Vareberg, Adam, Phillips, Jack, Bok, Ilhan, Dwyer, Matthew, Ashtiani, Alireza, Hai, Aviad“…Here we present a circuit for sensing ionic fluctuations in the brain by an ion-sensitive field effect transistor that detunes a single radiofrequency resonator in parallel. …”
Publicado 2023
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816“…This work reports, for the first time, the phenomenon of lateral Poole–Frenkel current conduction along the dielectric/Si interface of a silicon nanowire metal-oxide semiconductor (MOS) transistor. This discovery has a great impact on the study of device characteristic modeling and device reliability, leading to a new kind of electronic device with a distinct operation mechanism for replacing the existing MOS transistor structure. …”
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817por Carey, Tian, Cassidy, Oran, Synnatschke, Kevin, Caffrey, Eoin, Garcia, James, Liu, Shixin, Kaur, Harneet, Kelly, Adam G., Munuera, Jose, Gabbett, Cian, O’Suilleabhain, Domhnall, Coleman, Jonathan N.“…Furthermore, the performance of our WSe(2) transistors is maintained on polyethylene terephthalate (PET) even after 1000 bending cycles at 1% strain.…”
Publicado 2023
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820por Froeen, Solveig Marie“…Detailed simulations of the transistor current-voltage characteristics for different transistor sizes are done to find the minimum for the sum of the dynamic and OFF power consumption. …”
Publicado 2015
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