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841por Soikkeli, Miika, Murros, Anton, Rantala, Arto, Txoperena, Oihana, Kilpi, Olli-Pekka, Kainlauri, Markku, Sovanto, Kuura, Maestre, Arantxa, Centeno, Alba, Tukkiniemi, Kari, Gomes Martins, David, Zurutuza, Amaia, Arpiainen, Sanna, Prunnila, Mika“…The development of CMOS back end of line integration compatible graphene field-effect transistor (GFET)-based biosensing has been rapid during the past few years, in terms of both the fabrication scale-up and functionalization toward biorecognition from real sample matrices. …”
Publicado 2023
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842“…In a highly conducting segregated complex of (1,6-DAP)(TCNQ), ambipolar transistor characteristics are observed without subtracting the bulk current by using carefully prepared thin-film transistors.…”
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843por Park, Jingyu, Choi, Sungju, Kim, Changwook, Shin, Hong Jae, Jeong, Yun Sik, Bae, Jong Uk, Oh, Saeroonter, Kim, Dae Hwan“…Oxide semiconductor thin-film transistors (TFTs) are used in the pixel array and gate driver circuits of organic light emitting diode (OLED) display panels. …”
Publicado 2023
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844por Shafi, Abde Mayeen, Uddin, Md Gius, Cui, Xiaoqi, Ali, Fida, Ahmed, Faisal, Radwan, Mohamed, Das, Susobhan, Mehmood, Naveed, Sun, Zhipei, Lipsanen, Harri“…This structure significantly improves hole and electron mobilities in MoTe(2) field‐effect transistors (FETs), approaching theoretical limits. …”
Publicado 2023
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845por Wang, Zhiheng, Cao, Yanrong, Zhang, Xinxiang, Chen, Chuan, Wu, Linshan, Ma, Maodan, Lv, Hanghang, Lv, Ling, Zheng, Xuefeng, Tian, Wenchao, Ma, Xiaohua, Hao, Yue“…A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. …”
Publicado 2023
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846por Zhuang, Xinming, Sa, Zixu, Zhang, Jie, Wang, Mingxu, Xu, Mingsheng, Liu, Fengjing, Song, Kepeng, He, Tao, Chen, Feng, Yang, Zai‐xing“…Herein, the native GaO (x) shells are profitably utilized by a simple in‐situ thermal annealing process to achieve high‐performance GaSb nanowires (NWs) field‐effect‐transistors (FETs) with excellent bias‐stress stability and synaptic behaviors. …”
Publicado 2023
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847por Könemund, Lea, Neumann, Laurie, Hirschberg, Felix, Biedendieck, Rebekka, Jahn, Dieter, Johannes, Hans-Hermann, Kowalsky, WolfgangEnlace del recurso
Publicado 2023
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848por Liu, Aaron L., Lee, Myeongyeon, Venkatesh, Rahul, Bonsu, Jessica A., Volkovinsky, Ron, Meredith, J. Carson, Reichmanis, Elsa, Grover, Martha A.“…For example, the mobility of a polymer-based organic field-effect transistor (OFET) may vary by several orders of magnitude for a given polymer as a plethora of parameters related to solution processing, interface design/surface treatment, thin-film deposition, postprocessing, and measurement settings have a profound effect on the value of the final measurement. …”
Publicado 2023
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849“…In this paper, the impact of ambient temperature (T(amb)) on the SHE in stacked nanosheet transistors is investigated. As the number of lateral stacks (N(stack)) increases, the nanoscale devices show more severe thermal crosstalk issues, and the current performance between n- and p-type nanoscale transistors exhibits different degradation trends. …”
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851por Hagen, Joshua A., Kim, Sang N., Bayraktaroglu, Burhan, Leedy, Kevin, Chávez, Jorge L., Kelley-Loughnane, Nancy, Naik, Rajesh R., Stone, Morley O.“…Zinc oxide field effect transistors (ZnO-FET), covalently functionalized with single stranded DNA aptamers, provide a highly selective platform for label-free small molecule sensing. …”
Publicado 2011
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852“…A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. …”
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853“…Here, we review the latest developments of carbon nanostructure-based transistor sensors in ultrasensitive detection of chemical/biological entities, such as poisonous gases, nucleic acids, proteins and cells.…”
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854“…Their properties as an organic semiconductor were tested using an organic thin film transistor (OTFT) and were found to show typical p-type semiconductor curves. …”
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855por Li, Jun, Zhao, Yan, Tan, Huei Shuan, Guo, Yunlong, Di, Chong-An, Yu, Gui, Liu, Yunqi, Lin, Ming, Lim, Suo Hon, Zhou, Yuhua, Su, Haibin, Ong, Beng S.“…Foremost among critical enablers to propel this paradigm shift in manufacturing is a stable, solution-processable, high-performance semiconductor for printing functionally capable thin-film transistors — fundamental building blocks of microelectronics. …”
Publicado 2012
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856por Stefansson, Steingrimur, Knight, Martha, Kwon, Hena H., Stefansson, Lára A., Ahn, Saeyoung Nate“…To demonstrate the potential of single-walled carbon nanotube field-effect transistors (SWCNT-FETs) for high-throughput peptide-based assays, we have designed circuits arranged in an 8 × 12 (96-well) format that are accessible to standard multichannel pipettors. …”
Publicado 2013
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857“…In large-area electronics (LAE), however, the basic building-block, the thin-film field-effect transistor (TFT) has largely remained static. Now, a device concept with fundamentally different operation, the source-gated transistor (SGT) opens the possibility of unprecedented functionality in future low-cost LAE. …”
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858“…Recent efforts have been directed towards developing new chip-based tools(1–4,7–13), including micro-to-nanoscale metal pillars(7–9), transistor-based kinked nanowire(10,11) and nanotube devices(12,13). …”
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859por Withers, Freddie, Bointon, Thomas Hardisty, Hudson, David Christopher, Craciun, Monica Felicia, Russo, Saverio“…We present the first study of the intrinsic electrical properties of WS(2) transistors fabricated with two different dielectric environments WS(2) on SiO(2) and WS(2) on h-BN/SiO(2), respectively. …”
Publicado 2014
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860por Huo, Nengjie, Yang, Shengxue, Wei, Zhongming, Li, Shu-Shen, Xia, Jian-Bai, Li, Jingbo“…The photoelectrical properties of multilayer WS(2) nanoflakes including field-effect, photosensitive and gas sensing are comprehensively and systematically studied. The transistors perform an n-type behavior with electron mobility of 12 cm(2)/Vs and exhibit high photosensitive characteristics with response time (τ) of <20 ms, photo-responsivity (R(λ)) of 5.7 A/W and external quantum efficiency (EQE) of 1118%. …”
Publicado 2014
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