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Mostrando 861 - 880 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.14s Limitar resultados
  1. 861
    “…Recently, two-dimensional materials such as molybdenum disulphide (MoS(2)) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. …”
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    Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS(2) Heterojunctions
  2. 862
    “…Here we present flexible suspended gate organic thin-film transistors (SGOTFTs) as a model platform that enables ultra-sensitive pressure detection. …”
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    Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection
  3. 863
    por Martí, A., Luque, A.
    Publicado 2015
    “…Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base–emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. …”
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    Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion
  4. 864
    por Li, Zeng-Zhao, Lam, Chi-Hang, You, J. Q.
    Publicado 2015
    “…We propose an approach for probing Majorana bound states (MBSs) in a nanowire via counting statistics of a nearby charge detector in the form of a single-electron transistor (SET). We consider the impacts on the counting statistics by both the local coupling between the detector and an adjacent MBS at one end of a nanowire and the nonlocal coupling to the MBS at the other end. …”
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    Probing Majorana bound states via counting statistics of a single electron transistor
  5. 865
    “…By applying uniform white noise at the gate of an organic electrochemical transistor (OECT), and measuring the resulting current noise, we are able to dynamically monitor the impedance and thus integrity of cultured epithelial monolayers. …”
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    Using white noise to gate organic transistors for dynamic monitoring of cultured cell layers
  6. 866
    “…In the present study, we proposed and developed the Electret Gate of Field Effect Transistor (ElGoFET) transduction based on an electret and FET (field-effect-transistor) as a novel mechanism of MEMS microphone transduction. …”
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    A Micro-Machined Microphone Based on a Combination of Electret and Field-Effect Transistor
  7. 867
    “…Here, by employing the confined photo-catalytic oxidation method, we successfully demonstrate full polymer filed-effect transistors fabricated through four-step spin-coating process on a flexible polymer substrate. …”
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    Self-aligned, full solution process polymer field-effect transistor on flexible substrates
  8. 868
    “…In this work, we identify pairs of donor atoms in the nano-channel of a silicon field-effect transistor and demonstrate merging of the donor-induced potential wells at the interface by applying vertical electric field. …”
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    Electric-field-assisted formation of an interfacial double-donor molecule in silicon nano-transistors
  9. 869
    “…Conventional field-effect-transistor (FET)-based techniques use solution-based processes, thus require antibody binding to the detection region of the FET prior to the supply of the analyte. …”
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    Detection of airborne viruses using electro-aerodynamic deposition and a field-effect transistor
  10. 870
    por Lee, Sungsik, Nathan, Arokia
    Publicado 2016
    “…In contrast, the conduction threshold in accumulation mode transistors, such as the oxide thin film transistor (TFT), has remained ambiguous in view of the complex density of states distribution in the mobility gap. …”
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    Conduction Threshold in Accumulation-Mode InGaZnO Thin Film Transistors
  11. 871
    “…In a continuous search for the energy-efficient electronic switches, a great attention is focused on tunnel field-effect transistors (TFETs) demonstrating an abrupt dependence of the source-drain current on the gate voltage. …”
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    Abrupt current switching in graphene bilayer tunnel transistors enabled by van Hove singularities
  12. 872
    “…However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. …”
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    Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors
  13. 873
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    A transparent electrochromic metal-insulator switching device with three-terminal transistor geometry
  14. 874
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    Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model
  15. 875
    “…This enables gas discrimination down to the part per billion (ppb) level only based on one pristine single nanobelt transistor, with the excellent average Mahalanobis distance (MD) as high as 35 at the linear discriminant analysis (LDA) space. …”
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    A Single Nanobelt Transistor for Gas Identification: Using a Gas-Dielectric Strategy
  16. 876
    “…We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO(2), which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. …”
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    Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
  17. 877
    “…Ballistic transport approaching the quantum conductance limit of 2G(0) = 4e(2)/h has been achieved in field-effect transistors (FETs) containing one CNT. However, constraints in CNT sorting, processing, alignment, and contacts give rise to nonidealities when CNTs are implemented in densely packed parallel arrays such as those needed for technology, resulting in a conductance per CNT far from 2G(0). …”
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    Quasi-ballistic carbon nanotube array transistors with current density exceeding Si and GaAs
  18. 878
    “…Since the grain boundaries (GBs) within the semiconductor layer of organic field-effect transistors (OFETs) have a strong influence on device performance, a substantial number of studies have been devoted to controlling the crystallization characteristics of organic semiconductors. …”
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    Grain Boundary Induced Bias Instability in Soluble Acene-Based Thin-Film Transistors
  19. 879
    “…A simple to implement model is presented to extract interface trap density of graphene field effect transistors. The presence of interface trap states detrimentally affects the device drain current–gate voltage relationship I(ds)–V(gs). …”
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    Metal oxide-graphene field-effect transistor: interface trap density extraction model
  20. 880
    “…In the present paper, we show tungsten diselenide (WSe(2)) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. …”
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    Gate-Controlled WSe(2) Transistors Using a Buried Triple-Gate Structure
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