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881por Zhu, Zhenxing, Wei, Nan, Xie, Huanhuan, Zhang, Rufan, Bai, Yunxiang, Wang, Qi, Zhang, Chenxi, Wang, Sheng, Peng, Lianmao, Dai, Liming, Wei, Fei“…On the basis of a minimum consumed energy model with a Strouhal number of approximately 0.3, the scale could be controlled within the range of 1 × 10(4) to 3 × 10(4) μm(2) or even a larger range. Transistors fabricated with one m-CNT-T showed an on/off ratio of 10(3) to 10(6) with 4-mA on-state current, which is also the highest on-state current recorded so far for single CNT–based transistors. …”
Publicado 2016
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883por Senanayak, Satyaprasad P., Yang, Bingyan, Thomas, Tudor H., Giesbrecht, Nadja, Huang, Wenchao, Gann, Eliot, Nair, Bhaskaran, Goedel, Karl, Guha, Suchi, Moya, Xavier, McNeill, Christopher R., Docampo, Pablo, Sadhanala, Aditya, Friend, Richard H., Sirringhaus, Henning“…We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI(3)). …”
Publicado 2017
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884por Giannazzo, Filippo, Fisichella, Gabriele, Piazza, Aurora, Di Franco, Salvatore, Greco, Giuseppe, Agnello, Simonpietro, Roccaforte, Fabrizio“…This paper reports a detailed electrical characterization of back-gated multilayer MoS(2) transistors with Ni source/drain contacts at temperatures from T = 298 to 373 K, i.e., the expected range for transistor operation in circuits/systems, considering heating effects due to inefficient power dissipation. …”
Publicado 2017
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885“…We develop a ZnO nanorod field effect transistor (FET) as an ultrasensitive force sensor to realize long-time, unstained, and in-situ detection of cell cycle phases, including attachment, spread, and mitosis. …”
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886por Matsuda, Tokiyoshi, Umeda, Kenta, Kato, Yuta, Nishimoto, Daiki, Furuta, Mamoru, Kimura, Mutsumi“…Oxide semiconductors have been investigated as channel layers for thin film transistors (TFTs) which enable next-generation devices such as high-resolution liquid crystal displays (LCDs), organic light emitting diode (OLED) displays, flexible electronics, and innovative devices. …”
Publicado 2017
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887por Faber, Hendrik, Das, Satyajit, Lin, Yen-Hung, Pliatsikas, Nikos, Zhao, Kui, Kehagias, Thomas, Dimitrakopulos, George, Amassian, Aram, Patsalas, Panos A., Anthopoulos, Thomas D.“…Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. …”
Publicado 2017
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888“…High mobility thin-film transistor (TFT) is crucial for future high resolution and fast response flexible display. …”
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889por Guerriero, Erica, Pedrinazzi, Paolo, Mansouri, Aida, Habibpour, Omid, Winters, Michael, Rorsman, Niklas, Behnam, Ashkan, Carrion, Enrique A., Pesquera, Amaia, Centeno, Alba, Zurutuza, Amaia, Pop, Eric, Zirath, Herbert, Sordan, Roman“…All these figures of merit must be as large as possible for transistors to be useful in practical electronics applications. …”
Publicado 2017
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890por Vernick, Sefi, Trocchia, Scott M., Warren, Steven B., Young, Erik F., Bouilly, Delphine, Gonzalez, Ruben L., Nuckolls, Colin, Shepard, Kenneth L.“…The point-functionalized carbon nanotube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative based on intrinsic molecular charge that offers significantly higher signal levels for detection. …”
Publicado 2017
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891“…We present magnetoresistive organic field-effect transistors featuring ultrasmall magnetic field-effects as well as a sign reversal. …”
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892“…[Image: see text] Currently, research has been focusing on printing and laser crystallization of cyclosilanes, bringing to life polycrystalline silicon (poly-Si) thin-film transistors (TFTs) with outstanding properties. However, the synthesis of these Si-based inks is generally complex and expensive. …”
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893por Kireev, Dmitry, Brambach, Max, Seyock, Silke, Maybeck, Vanessa, Fu, Wangyang, Wolfrum, Bernhard, Offenhäusser, Andreas“…This work is focused on the fabrication and analysis of graphene-based, solution-gated field effect transistor arrays (GFETs) on a large scale for bioelectronic measurements. …”
Publicado 2017
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894por Noviyana, Imas, Lestari, Annisa Dwi, Putri, Maryane, Won, Mi-Sook, Bae, Jong-Seong, Heo, Young-Woo, Lee, Hee Young“…Top-contact bottom-gate thin film transistors (TFTs) with zinc-rich indium zinc tin oxide (IZTO) active layer were prepared at room temperature by radio frequency magnetron sputtering. …”
Publicado 2017
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895por Veliev, Farida, Han, Zheng, Kalita, Dipankar, Briançon-Marjollet, Anne, Bouchiat, Vincent, Delacour, Cécile“…Here, we report on the fabrication of graphene field effect transistors (G-FETs) on various substrates (silicon, sapphire, glass coverslips, and polyimide deposited onto Si/SiO(2) substrates), exhibiting high sensitivity (4 mS/V, close to the Dirac point at V(LG) < V(D)) and low noise level (10(−22) A(2)/Hz, at V(LG) = 0 V). …”
Publicado 2017
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896por Zhao, Tian, Huang, Gang, Li, Yang, Yang, Shunchun, Ramezani, Saleh, Lin, Zhiqiang, Wang, Yiguang, Ma, Xinpeng, Zeng, Zhiqun, Luo, Min, de Boer, Esther, Xie, Xian-Jin, Thibodeaux, Joel, Brekken, Rolf A., Sun, Xiankai, Sumer, Baran D., Gao, Jinming“…Here, we report the design and performance of a fluorescent nanoprobe with transistor-like responses (transition pH = 6.9) for the detection of the deregulated pH that drives many of the invasive properties of cancer. …”
Publicado 2016
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897“…By means of advanced numerical simulation, the thermoelectric properties of a Si-quantum dot-based single-electron transistor operating in sequential tunneling regime are investigated in terms of figure of merit, efficiency and power. …”
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900“…This study investigates not only the steady state but also the transient photoresponse of graphene field-effect transistor (G-FET) of which gate bias is applied through the Schottky barrier formed at an n-type Si/graphene interface with a thin oxide layer, where the oxide thickness is sufficiently thin for tunneling of the charge carrier. …”
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