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  1. 981
    “…Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride (h-BN) for high-performance p-type field-effect transistors (FETs). Importantly, the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm(2) V(−1) s(−1) at room temperature, that may lay the foundation for the future high-performance p-type 2D FET and metal–oxide–semiconductor (p-MOS) inverter. …”
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  2. 982
    “…We report the growth of zirconium oxide (ZrO(2)) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors. …”
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  3. 983
  4. 984
  5. 985
    “…A less balanced transport in field-effect transistors with increased electron mobility of 0.258 cm(2) V(−1) s(−1) and lowered hole transport of 2.4 × 10(−3) cm(2) V(−1) s(−1) was found for P2. …”
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  6. 986
    “…By introducing bulky 2-phenylethyl groups into sulfur-rich electron acceptors, 5,5′-bithiazolidinylidene-2,2′-dione-4,4′-dithione and 5,5′-bithiazolidinylidene-2,4,2′,4′-tetrathione, electron transport with the mobility of 0.27 cm(2) V(−1) s(−1) with ambient and long-term stability is achieved in thin-film transistors. Bulky groups destroy the intermolecular S–S network, but the long-term transistor stability is maintained. …”
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  7. 987
    “…We interfaced carbon fiber microelectrode (CFME) sensors with both fast scan cyclic voltammetry (FSCV) and field-effect transistor (FET) transducers for dynamic pH measurements. …”
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  8. 988
    “…With the development of stretchable, printable, and implantable electronics, organic field-effect transistors (OFETs) with a self-healable capability are becoming increasingly important both academically and industrially. …”
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  9. 989
  10. 990
    “…This paper introduces artificial neuromorphic cognitive skins based on arrayed, biaxially stretchable synaptic transistors constructed entirely out of elastomeric materials. …”
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  11. 991
    “…In this study, we report a pH-responsive hydrogel-modified silicon nanowire field-effect transistor for pH sensing, whose modification is operated by spin coating, and whose performance is characterized by the electrical curve of field-effect transistors. …”
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  12. 992
    “…Here, we show that device stability in graphene-based field-effect transistors with amorphous gate oxides can be improved by Fermi-level tuning. …”
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  13. 993
  14. 994
    “…Ferroelectric Field‐Effect‐Transistors In article number 2200566, Sungjoo Lee and co‐workers report on the fabrication and application of a ferroelectric transistor integrated with a van der Waals ferroelectrics heterostructure (CuInP(2)S(6)/α‐In(2)Se(3)). …”
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  15. 995
    por Son, Jaemin, Cho, Kyoungah, Kim, Sangsig
    Publicado 2022
    “…In this study, we present a fully complementary metal–oxide–semiconductor-compatible ternary inverter with a memory function using silicon feedback field-effect transistors (FBFETs). FBFETs operate with a positive feedback loop by carrier accumulation in their channels, which allows to achieve excellent memory characteristics with extremely low subthreshold swings. …”
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  16. 996
    “…Transistors with inorganic semiconductors have superior performance and reliability compared to organic transistors. …”
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  17. 997
    “…Research on electrolyte-gated and organic electrochemical transistor (OECT) architectures is motivated by the prospect of a highly biocompatible interface capable of amplifying bioelectronic signals at the site of detection. …”
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  18. 998
    “…Here, t-SPL is used for the fabrication of MoS(2)-based field effect transistors (FETs). In particular, the use of t-SPL is demonstrated for the first time for the fabrication of edge-contact MoS(2) FETs, combining the hot-tip patterning and Ar(+) milling to etch the 2DM. …”
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  19. 999
    “…Exploiting multifunctional thin film transistors (TFTs) by low-temperature manufacturing strategy is a crucial step toward flexible electronics. …”
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  20. 1000
    “…This work proves that molecular weight is more important than molecular aggregation ability when designing organic field-effect transistors for polymer semiconductors.…”
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