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  1. 1061
    “…Here, we present a temperature (T) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe(2) exfoliated onto SiO(2). …”
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    Hall and field-effect mobilities in few layered p-WSe(2) field-effect transistors
  2. 1062
    “…Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS(2) n-type transistor and a WSe(2) p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. …”
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    A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors
  3. 1063
    “…We fabricated monolayer and few-layer ReS(2) field-effect transistors, which exhibit competitive performance with large current on/off ratios (∼10(7)) and low subthreshold swings (100 mV per decade). …”
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    Integrated digital inverters based on two-dimensional anisotropic ReS(2) field-effect transistors
  4. 1064
    “…We have studied the charge and thermal transport properties of a porphyrin-based single-molecule transistor with electro-burnt graphene electrodes (EBG) using the nonequilibrium Green’s function method and density functional theory. …”
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    Electron and heat transport in porphyrin-based single-molecule transistors with electro-burnt graphene electrodes
  5. 1065
    por Sirringhaus, Henning
    Publicado 2014
    “…Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. …”
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    25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon
  6. 1066
    por Qiu, Dongri, Kim, Eun Kyu
    Publicado 2015
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    Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS(2) Heterostructured Transistors
  7. 1067
    “…In this study, we employed silicon nanowire field-effect transistors (SiNW-FETs) with polydimethylsiloxane (PDMS) microfluidic channels to simultaneously detect AFP and CEA in desalted human serum. …”
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    Simultaneous Detection of α-Fetoprotein and Carcinoembryonic Antigen Based on Si Nanowire Field-Effect Transistors
  8. 1068
    “…Here we present experimental evidence of strong coupling between the cavity resonance of a terahertz metamaterial and the ISR in a high electron mobility transistor (HEMT) structure. The device is electrically switched from an uncoupled to a strongly coupled regime by tuning the ISR with epitaxially grown transparent gate. …”
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    Ultrawide electrical tuning of light matter interaction in a high electron mobility transistor structure
  9. 1069
    “…Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabrication scheme. …”
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    High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics
  10. 1070
    “…High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. …”
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    Remarkably high mobility ultra-thin-film metal-oxide transistor with strongly overlapped orbitals
  11. 1071
    “…Here, an active metamaterial device based on enhancement-mode transparent amorphous oxide thin-film transistor arrays for THz modulation is demonstrated. …”
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    Electrically tunable terahertz metamaterials with embedded large-area transparent thin-film transistor arrays
  12. 1072
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    Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors
  13. 1073
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    Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors
  14. 1074
    “…In the application of thin film transistors (TFTs), all-organic TFT arrays made by all-solution process are desired for low cost and flexible electronics. …”
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    Flexible All-organic, All-solution Processed Thin Film Transistor Array with Ultrashort Channel
  15. 1075
    “…We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. …”
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    Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics
  16. 1076
    “…We report on the detailed electrical investigation of all-inkjet-printed thin-film transistor (TFT) arrays focusing on TFT failures and their origins. …”
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    All-inkjet-printed thin-film transistors: manufacturing process reliability by root cause analysis
  17. 1077
    “…Organic thin-film transistors for high frequency applications require large transconductances in combination with minimal parasitic capacitances. …”
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    Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors
  18. 1078
    “…A new technique is proposed for the activation of low temperature amorphous InGaZnO thin film transistor (a-IGZO TFT) backplanes through application of a bias voltage and annealing at 130 °C simultaneously. …”
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    Electric Field-aided Selective Activation for Indium-Gallium-Zinc-Oxide Thin Film Transistors
  19. 1079
    “…The electronic and structural properties of two tetrathiafulvalene derivatives bearing aromatic benzene rings are reported. Thin film transistors of these materials show p-type characteristics with comparable mobility values. …”
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    Structural and electronic characterisation of π-extended tetrathiafulvalene derivatives as active components in field-effect transistors
  20. 1080
    “…The nanostructure of composites as a channel and a sensing material plays a critical role in the performance of field effect transistors (FETs). Therefore, it is highly desirable to prepare elaborate composite that can allow the fabrication of high performance FETs and also provide high sensitivity and selectivity in detecting specific chemical/biological targets. …”
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    Biologically templated assembly of hybrid semiconducting nanomesh for high performance field effect transistors and sensors
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