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1101por Nazir, Ghazanfar, Khan, Muhammad Farooq, Aftab, Sikandar, Afzal, Amir Muhammad, Dastgeer, Ghulam, Rehman, Malik Abdul, Seo, Yongho, Eom, Jonghwa“…Two-dimensional materials based vertical field-effect transistors have been widely studied due to their useful applications in industry. …”
Publicado 2017
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1102“…Two-dimensional transitional metal dichalcogenide (TMDC) field-effect transistors (FETs) are proposed to be promising for devices scaling beyond silicon-based devices. …”
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1103“…In this paper, a coupling p+n field effect transistor (FET) amplification circuit is designed to detect methane gas. …”
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1104“…Diketopyrrolopyrrole-based copolymers with different contents and substitution patterns of the PDMS side chains were synthesized and evaluated for application in organic field-effect transistors. The PDMS side chains greatly increased the solubility of the polymers and led to shorter d-spacings of the π-stacking in the thin films compared with polymers containing conventional branched alkyl side chains.…”
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1105por Al-Hashimi, Mohammed, Han, Yang, Smith, Jeremy, Bazzi, Hassan S., Alqaradawi, Siham Yousuf A., Watkins, Scott E., Anthopoulos, Thomas D., Heeney, Martin“…The optical band gap of the polymers is shown to systematically decrease as the size of the heteroatom is increased, mainly as a result of a stabilization of the LUMO energy, resulting in a small band gap of 1.4 eV for P3TeV. Field effect transistors measurements in variety of architectures demonstrate that the selenophene polymer exhibits the highest mobility, highlighting that increasing the size of the heteroatom is not always beneficial for charge transport.…”
Publicado 2016
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1106por Liu, Xianzhe, Ning, Honglong, Chen, Weifeng, Fang, Zhiqiang, Yao, Rihui, Wang, Xiaofeng, Deng, Yuxi, Yuan, Weijian, Wu, Weijing, Peng, Junbiao“…In this study, the contact properties of amorphous silicon–tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were analyzed. …”
Publicado 2018
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1107por Tran, Duy Phu, Pham, Thuy Thi Thanh, Wolfrum, Bernhard, Offenhäusser, Andreas, Thierry, Benjamin“…Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. …”
Publicado 2018
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1108por Dong, Yan, Son, Dong-Hyeok, Dai, Quan, Lee, Jun-Hyeok, Won, Chul-Ho, Kim, Jeong-Gil, Chen, Dunjun, Lee, Jung-Hee, Lu, Hai, Zhang, Rong, Zheng, Youdou“…The AlInN/GaN high-electron-mobility-transistor (HEMT) indicates better performances compared with the traditional AlGaN/GaN HEMTs. …”
Publicado 2018
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1109
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1110por Zhou, Xinyuan, Wang, Jinxiao, Wang, Zhou, Bian, Yuzhi, Wang, Ying, Han, Ning, Chen, Yunfa“…A new interlocking p+n field-effect transistor (FET) circuit has been proposed for Mn-doped ZnO nanoparticles (MZO) to detect the acetone gas at low concentration, especially close to 1.8 ppm. …”
Publicado 2018
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1111“…In this work, the hBN coupled SnS(2) thin film transistors are demonstrated with bottom-gated device configuration. …”
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1112por Pradhan, Nihar R., Garcia, Carlos, Isenberg, Bridget, Rhodes, Daniel, Feng, Simin, Memaran, Shahriar, Xin, Yan, McCreary, Amber, Walker, Angela R. Hight, Raeliarijaona, Aldo, Terrones, Humberto, Terrones, Mauricio, McGill, Stephen, Balicas, Luis“…We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe(2), mechanically exfoliated onto a SiO(2) layer grown on p-doped Si. …”
Publicado 2018
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1113por Omika, Keiichi, Tateno, Yasunori, Kouchi, Tsuyoshi, Komatani, Tsutomu, Yaegassi, Seiji, Yui, Keiichi, Nakata, Ken, Nagamura, Naoka, Kotsugi, Masato, Horiba, Koji, Oshima, Masaharu, Suemitsu, Maki, Fukidome, Hirokazu“…With the rapid depletion of communication-frequency resources, mainly due to the explosive spread of information communication devices for the internet of things, GaN-based high-frequency high-power transistors (GaN-HEMTs) have attracted considerable interest as one of the key devices that can operate in the high-frequency millimeter-wave band. …”
Publicado 2018
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1114“…A two-dimensional (2D) magnetic field sensor consisting of four silicon magnetic sensitive transistors (SMSTs) with similar characteristics is presented in this paper. …”
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1115por van der Heijden, Joost, Kobayashi, Takashi, House, Matthew G., Salfi, Joe, Barraud, Sylvain, Laviéville, Romain, Simmons, Michelle Y., Rogge, Sven“…Here, we study acceptor hole spin dynamics by dispersive readout of single-hole tunneling between two coupled acceptors in a nanowire transistor. We identify m(J) = ±1/2 and m(J) = ±3/2 levels, and we use a magnetic field to overcome the initial heavy-light hole splitting and to tune the J = 3/2 energy spectrum. …”
Publicado 2018
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1116por Bederak, Dmytro, Balazs, Daniel M., Sukharevska, Nataliia V., Shulga, Artem G., Abdu-Aguye, Mustapha, Dirin, Dmitry N., Kovalenko, Maksym V., Loi, Maria A.“…The electron mobility in field-effect transistors of PbS CQDs treated with different halides shows an increase with the size of the atomic ligand (from 3.9 × 10(–4) cm(2)/(V s) for fluoride-treated to 2.1 × 10(–2) cm(2)/(V s) for iodide-treated), whereas the hole mobility remains unchanged in the range between 1 × 10(–5) cm(2)/(V s) and 10(–4)cm(2)/(V s). …”
Publicado 2018
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1117por Xu, Hong, Xing, Jie, Huang, Yuan, Ge, Chen, Lu, Jinghao, Han, Xu, Du, Jianyu, Hao, Huiying, Dong, Jingjing, Liu, Hao“…SnSe(2) field-effect transistor was fabricated based on exfoliated few-layered SnSe(2) flake, and its electrical and photoelectric properties have been investigated in detail. …”
Publicado 2019
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1118por Duan, Xiaoling, Zhang, Jincheng, Chen, Jiabo, Zhang, Tao, Zhu, Jiaduo, Lin, Zhiyu, Hao, Yue“…A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. …”
Publicado 2019
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1119“…Here, it is demonstrated that high‐frequency, low‐voltage, polymer field‐effect transistors can be fabricated on plastic with the sole use of a combination of scalable printing and digital laser‐based techniques. …”
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1120por Kim, Gwangwoo, Kim, Sung-Soo, Jeon, Jonghyuk, Yoon, Seong In, Hong, Seokmo, Cho, Young Jin, Misra, Abhishek, Ozdemir, Servet, Yin, Jun, Ghazaryan, Davit, Holwill, Matthew, Mishchenko, Artem, Andreeva, Daria V., Kim, Yong-Jin, Jeong, Hu Young, Jang, A-Rang, Chung, Hyun-Jong, Geim, Andre K., Novoselov, Kostya S., Sohn, Byeong-Hyeok, Shin, Hyeon SukEnlace del recurso
Publicado 2019
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