Materias dentro de su búsqueda.
Mostrando 1,141 - 1,160 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.29s Limitar resultados
  1. 1141
    “…Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didcot, U.K.) facility. About 2000 power transistors made by STMicroelectronics were tested in all the experiments. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Accelerated Tests on Si and SiC Power Transistors with Thermal, Fastand Ultra-Fast Neutrons
  2. 1142
    “…Field effect transistors (FETs) based on 2D materials are of great interest for applications in ultrathin electronic and sensing devices. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Optically Triggered Control of the Charge Carrier Density in Chemically Functionalized Graphene Field Effect Transistors
  3. 1143
    “…Herein, we develop wafer scale graphene transistor technology for overcoming these limitations. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Selective ion sensing with high resolution large area graphene field effect transistor arrays
  4. 1144
    “…The approach is generally applicable to several transistor technologies and opens opportunities for multifunctional enhanced bioelectronics.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Multiscale real time and high sensitivity ion detection with complementary organic electrochemical transistors amplifier
  5. 1145
    “…We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors
  6. 1146
    por Martinez, Antonio, Barker, John R.
    Publicado 2020
    “…A review and perspective is presented of the classical, semi-classical and fully quantum routes to the simulation of electro-thermal phenomena in ultra-scaled silicon nanowire field-effect transistors. It is shown that the physics of ultra-scaled devices requires at least a coupled electron quantum transport semi-classical heat equation model outlined here. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Quantum Transport in a Silicon Nanowire FET Transistor: Hot Electrons and Local Power Dissipation
  7. 1147
    “…[Image: see text] Ion-sensitive transistors with nanoscale or microscale dimensions are promising for high-resolution electrophysiological recording and sensing. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    High-Resolution Electrochemical Transistors Defined by Mold-Guided Drying of PEDOT:PSS Liquid Suspension
  8. 1148
    “…In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor
  9. 1149
    “…Herein, a compact and user-friendly graphene field effect transistor (GraFET) based ultrasensitive biosensor has been developed for detecting Japanese Encephalitis Virus (JEV) and Avian Influenza Virus (AIV). …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Graphene functionalized field-effect transistors for ultrasensitive detection of Japanese encephalitis and Avian influenza virus
  10. 1150
    “…This technique facilitates extremely sharp switching transistors with a subthreshold swing of 63 mV dec(−1) owing to the effective elimination of charge traps at the semiconductor/dielectric interface. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Meniscus-controlled printing of single-crystal interfaces showing extremely sharp switching transistor operation
  11. 1151
    “…Here we report synaptic transistors with printed aluminum oxide dielectrics, improving the operation frequency of solution-processed synaptic transistors by almost two orders of magnitude to 50 kHz. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
  12. 1152
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Hybrid low-voltage physical unclonable function based on inkjet-printed metal-oxide transistors
  13. 1153
    “…Single and multilayer overprints are incorporated as bottom contacts in bottom gate organic field-effect transistors (OFETs) with a semiconducting polymer as active layer. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Geometry Control of Source/Drain Electrodes in Organic Field-Effect Transistors by Electrohydrodynamic Inkjet Printing
  14. 1154
    “…Bulk heterojunctions (BHJ), consisting of a blend of two organic semiconductors of different electronic affinities, allow fabrication of a broad range of devices such as light-emitting transistors, light-emitting diodes, photovoltaics, photodetectors, ambipolar transistors and sensors. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Switching from Electron to Hole Transport in Solution-Processed Organic Blend Field-Effect Transistors
  15. 1155
    Publicado 2020
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Flexible and Transparent Artificial Synapse Devices Based on Thin-Film Transistors with Nanometer Thickness [Corrigendum]
  16. 1156
    “…We present direct measurement of the Schottky barrier height and its lowering in the transition metal dichalcogenide (TMD)/metal interface of a field effect transistor. It is found that the barrier height at the gold/ single-layer molybdenum disulfide (MoS(2)) interfaces decreases with increasing drain voltage, and this lowering reaches 0.5–1 V We also show that increase of the gate voltage induces additional barrier lowering.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Schottky Barrier Height and Image Force Lowering in Monolayer MoS(2) Field Effect Transistors
  17. 1157
    “…Thus, the fabrication of graphene nanoribbons has garnered much attention for building high-performance field-effect transistors. Consequently, various methodologies reported previously have brought significant progress in the development of highly ordered graphene nanoribbons. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Highly Aligned Polymeric Nanowire Etch-Mask Lithography Enabling the Integration of Graphene Nanoribbon Transistors
  18. 1158
    “…Consequently, bottom-gate, top-contact organic thin film transistors (OTFTs) based on the TIPS pentacene/PFS mixture yielded a 40% increase in performance consistency (represented by the ratio of average mobility to the standard deviation of mobility). …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Polyferrocenylsilane Semicrystalline Polymer Additive for Solution-Processed p-Channel Organic Thin Film Transistors
  19. 1159
    “…[Image: see text] An MXene–graphene field-effect transistor (FET) sensor for both influenza virus and 2019-nCoV sensing was developed and characterized. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    MXene–Graphene Field-Effect Transistor Sensing of Influenza Virus and SARS-CoV-2
  20. 1160
    “…We demonstrated the effect of a buffer layer on the electrical characteristics of ferroelectric polymer capacitors and field-effect transistors. Various polymer materials with a dielectric constant between 2 and 42 were used to form buffer layers with a similar thicknesses, but with different capacitances. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Effect of Buffer Layer Capacitance on the Electrical Characteristics of Ferroelectric Polymer Capacitors and Field Effect Transistors
Herramientas de búsqueda: RSS