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  1. 1221
    “…This paper provides comprehensive experimental analysis relating to improvements in the two-dimensional (2D) p-type metal–oxide–semiconductor (PMOS) field effect transistors (FETs) by pure van der Waals (vdW) contacts on few-layer tungsten diselenide (WSe(2)) with high-k metal gate (HKMG) stacks. …”
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    Online Artículo Texto
    Improvements in 2D p-type WSe(2) transistors towards ultimate CMOS scaling
  2. 1222
    por Sams, Howard W.
    Publicado 1962
    Materias: “…Transistores. 356116…”
    Libro
    Sustitución de transitores
  3. 1223
    Publicado 1995
    Materias: “…Transistores Catálogos.…”
    Libro
    Thyristor data /
  4. 1224
    por Juárez Mora, Adán
    Publicado 2005
    Tesis Libro
    Control de motores para procesos de automatización por medio de transistores y PC /
  5. 1225
    por Crawford, Robert H
    Publicado 1967
    Enlace del recurso
    MOSFET in circuit design: metal-oxide-semiconductor field-effect transistors for discrete and integrated-circuit technology
  6. 1226
    “…We present new experimental results on heavy ion-induced gate rupture on deep submicron CMOS transistor arrays. Through the use of dedicated test structures, composed by a large number of 130-nm MOSFETs connected in parallel, we show the response to heavy ion irradiation under high stress voltages of devices previously irradiated with X-rays. …”
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    Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation
  7. 1227
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    Measurements of transistors and silicon microstrip detector readout circuits in the Harris AVLSIRA radiation hard CMOS process
  8. 1228
    por Santiard, Jean-Claude, Faccio, F
    Publicado 1996
    Enlace del recurso
    Noise and speed characteristics of test transistors and charge amplifiers designed using a submicron CMOS technology
  9. 1229
    “…The characterization of commercial-grade power transistors upon high levels of particle irradiation is required to enable radiation tolerant LED power supplies for the new luminaires of CERN accelerator tunnels, which represent a harsh environment for semiconductor devices. …”
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    High-energy proton irradiation effects on GaN hybrid-drain-embedded gate injection transistors
  10. 1230
    “…[Image: see text] Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles quantum-transport calculations by adopting a novel type of partially sulfur-replaced edge contact metal/WSX/WS(2) in order to lower the Schottky barrier height and in turn reduce the contact resistance. …”
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    Online Artículo Texto
    WS(2) Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study
  11. 1231
    “…In this work, we designed peptides that spontaneously align into monomolecular-thick nanostructures on electrochemical MoS(2) transistors in a non-covalent fashion and act as a biomolecular scaffold for efficient biosensing. …”
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    Online Artículo Texto
    Self-assembled GA-Repeated Peptides as a Biomolecular Scaffold for Biosensing with MoS(2) Electrochemical Transistors
  12. 1232
    “…The Rashba spin–orbit coupling induced quantum transport through a quantum dot embedded in a two-arm quantum loop of a quantum dot transistor is studied at finite temperature in the presence of electron–phonon and Hubbard interactions, an external magnetic field and quantum dissipation. …”
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    Online Artículo Texto
    Rashba effect on finite temperature magnetotransport in a dissipative quantum dot transistor with electronic and polaronic interactions
  13. 1233
    “…In this work, a multi‐gate electrolyte‐gated transistor (EGT)‐based reservoir device for efficient multi‐channel near‐sensor computing is reported. …”
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    Online Artículo Texto
    Near‐Sensor Reservoir Computing for Gait Recognition via a Multi‐Gate Electrolyte‐Gated Transistor
  14. 1234
    “…In this study, we demonstrate laser-induced p-type doping in a selective region of n-type semiconducting MoTe(2) field effect transistors (FET) with an advance in using the hexagonal boron nitride as passivation layer from protecting the structure phase change from laser doping. …”
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    Online Artículo Texto
    Conversion of Charge Carrier Polarity in MoTe(2) Field Effect Transistor via Laser Doping
  15. 1235
    “…An analytical modeling framework was used to investigate the I–V characteristics of field-effect transistors based on MoS(2). The study begins by developing a ballistic current equation using a circuit model with two contacts. …”
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    Online Artículo Texto
    Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS(2) Field-Effect Transistors
  16. 1236
    “…In this work, we propose a platform for future low-voltage edible transistors and circuits that comprises an edible chitosan gating medium and inkjet-printed inert gold electrodes, compatible with low thermal budget edible substrates, such as ethylcellulose. …”
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    Online Artículo Texto
    Chitosan-gated organic transistors printed on ethyl cellulose as a versatile platform for edible electronics and bioelectronics
  17. 1237
    “…Two-dimensional (2D) materials have been considered promising candidates for future low power-dissipation and reconfigurable integrated circuit applications. However, 2D transistors with intrinsic ambipolar transport polarity are usually affected by large off-state leakage currents and small on/off ratios. …”
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    Online Artículo Texto
    Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents
  18. 1238
    “…We show that misfits behave as a periodic arrangement of ultratunable field effect transistors where a charging as large as ≈6 × 10(14) e(–) cm(–2) can be reached and controlled efficiently by the La–Pb alloying in the rocksalt. …”
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    Online Artículo Texto
    Misfit Layer Compounds as Ultratunable Field Effect Transistors: From Charge Transfer Control to Emergent Superconductivity
  19. 1239
    “…In this study, to systematically investigate the piezotronic and piezo-phototronic effects in field-effect transistors (FETs), a core–shell structure-based Si/ZnO nanowire heterojunction FET (HJFET) model was established using the finite element method. …”
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    Online Artículo Texto
    Piezotronic and Piezo-Phototronic Effects-Enhanced Core–Shell Structure-Based Nanowire Field-Effect Transistors
  20. 1240
    por Kim, Taewoo, Yun, Kwang-Seok
    Publicado 2023
    “…Photonic synaptic transistors are being investigated for their potential applications in neuromorphic computing and artificial vision systems. …”
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    Online Artículo Texto
    Photonic synaptic transistors with new electron trapping layer for high performance and ultra-low power consumption
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