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1321“…We investigate the effect of applied gate and drain voltages on the charge transport properties in a zinc oxide (ZnO) nanowire field effect transistor (FET) through temperature- and voltage-dependent measurements. …”
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1322por Senanayak, Satyaprasad P., Abdi-Jalebi, Mojtaba, Kamboj, Varun S., Carey, Remington, Shivanna, Ravichandran, Tian, Tian, Schweicher, Guillaume, Wang, Junzhan, Giesbrecht, Nadja, Di Nuzzo, Daniele, Beere, Harvey E., Docampo, Pablo, Ritchie, David A., Fairen-Jimenez, David, Friend, Richard H., Sirringhaus, Henning“…Despite sustained research, application of lead halide perovskites in field-effect transistors (FETs) has substantial concerns in terms of operational instabilities and hysteresis effects which are linked to its ionic nature. …”
Publicado 2020
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1323por Thuau, Damien, Begley, Katherine, Dilmurat, Rishat, Ablat, Abduleziz, Wantz, Guillaume, Ayela, Cédric, Abbas, Mamatimin“…Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. …”
Publicado 2020
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1324por Jewel, Mohi Uddin, Monne, Mahmuda Akter, Mishra, Bhagyashree, Chen, Maggie Yihong“…The results may lead towards the development of all-printed 2D material-based transistor switches.…”
Publicado 2020
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1325por Shen, Tao, Zhou, Hui, Liu, Xue, Fan, Yue, Mishra, Debesh Devadutta, Fan, Qin, Yang, Zilu, Wang, Xianbao, Zhang, Ming, Li, Jinhua“…By controlling the solubility and thickness of the polymer modification layers, it is possible to regulate the grain boundary and domain size of C8-BTBT films, which determine the performances of OTFTs. The bottom-gate transistors modified by a thick PS layer exhibit a mobility of >7 cm(2)/V·s and an on/off ratio of >10(7). …”
Publicado 2020
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1326por Selvarajan, Reena Sri, Rahim, Ruslinda A., Majlis, Burhanuddin Yeop, Gopinath, Subash C. B., Hamzah, Azrul Azlan“…Herein, an ultrasensitive and highly selective aptameric graphene-based field-effect transistor (GFET) sensor for ADH detection was developed by directly immobilizing ADH-specific aptamer on a surface-modified suspended graphene channel. …”
Publicado 2020
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1327“…Then, the charge transport characteristics and contact resistance of 2DCOS-based transistors are explored. Following this, beyond single transistors, the p–n junction devices and planar integrated circuits based on 2DCOS are also emphasized. …”
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1328por Paterson, Alexandra F., Savva, Achilleas, Wustoni, Shofarul, Tsetseris, Leonidas, Paulsen, Bryan D., Faber, Hendrik, Emwas, Abdul Hamid, Chen, Xingxing, Nikiforidis, Georgios, Hidalgo, Tania C., Moser, Maximillian, Maria, Iuliana Petruta, Rivnay, Jonathan, McCulloch, Iain, Anthopoulos, Thomas D., Inal, Sahika“…However, the technical challenge is extreme: n-doped polymers are unstable in electrochemical transistor operating environments, air and water (electrolyte). …”
Publicado 2020
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1329“…Here, an organic electrochemical transistor (OECT) embedded in a flexible polyimide substrate is utilized as transducer to realize a highly sensitive dopamine aptasensor. …”
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1330por Bhattacharjee, Shubhadeep, Wigchering, Rient, Manning, Hugh G., Boland, John. J., Hurley, Paul K.“…In this work, we leverage the short/long term memory effects due to the electron trapping events in an atomically thin channel transistor that mimic the exchange of neurotransmitters and emulate a synaptic response. …”
Publicado 2020
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1331por Jadwiszczak, Jakub, Maguire, Pierce, Cullen, Conor P, Duesberg, Georg S, Zhang, Hongzhou“…Here, we report a systematic study of the electrical performance of chemically synthesized monolayer molybdenum disulfide (MoS(2)) field-effect transistors irradiated with a focused helium ion beam as a function of increasing areal irradiation coverage. …”
Publicado 2020
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1332por Shi, Yuhao, Zheng, Yingkai, Wang, Jialiang, Zhao, Ran, Wang, Tao, Zhao, Changbin, Chang, Kuan-Chang, Meng, Hong, Wang, Xinwei“…Organic field-effect transistors (OFETs) are of the core units in organic electronic circuits, and the performance of OFETs replies critically on the properties of their dielectric layers. …”
Publicado 2020
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1333por Li, Chen, Lin, Hongxiao, Li, Junjie, Yin, Xiaogen, Zhang, Yongkui, Kong, Zhenzhen, Wang, Guilei, Zhu, Huilong, Radamson, Henry H.“…Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. …”
Publicado 2020
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1334por Rehman, Shania, Khan, Muhammad Farooq, Rahmani, Mehr Khalid, Kim, Honggyun, Patil, Harshada, Khan, Sobia Ali, Kang, Moon Hee, Kim, Deok-kee“…The back gated three terminal field effect transistors (FETs) are auspicious candidates for the emulation of biological functions to recognize the proficient neuromorphic computing systems. …”
Publicado 2020
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1335por Diacci, Chiara, Abedi, Tayebeh, Lee, Jee Woong, Gabrielsson, Erik O., Berggren, Magnus, Simon, Daniel T., Niittylä, Totte, Stavrinidou, Eleni“…Here, we developed enzymatic biosensors based on organic electrochemical transistors (OECTs) for in-vivo and real-time monitoring of sugar fluctuations in the vascular tissue of trees. …”
Publicado 2020
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1336“…Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-IGZO TFTs with various channel shapes such as zigzag, circular, and U-type channels are implemented and their vertical and lateral electric field stress (E-field) effects are systematically tested and analyzed by using an experimental and modeling study. …”
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1337“…L-shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low subthreshold swing, off-state current, and power consumption. …”
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1340por Suntornwipat, Nattakarn, Majdi, Saman, Gabrysch, Markus, Kovi, Kiran Kumar, Djurberg, Viktor, Friel, Ian, Twitchen, Daniel J., Isberg, Jan“…Using ultrapure single-crystalline diamond, we demonstrate electrostatic control of valley currents in a dual-gate field-effect transistor, where the electrons are generated with a short ultraviolet pulse. …”
Publicado 2020
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