“…In this study, a new interference phenomenon was observed when the microwave pulses were injected into the gallium nitride (GaN) high electron mobility transistor (HEMT) power amplifier through the output port. …”
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“…Through substitution of the widely employed electron-deficient naphthalene diimide (NDI) unit for the core-extended naphthodithiophene diimide (NDTI) units, the resulting polymer shows a more planar backbone with closer packing, leading to an increase in the electron mobility in organic electrochemical transistors (OECTs) by more than two orders of magnitude. …”
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“…Stretchable Organic Electrochemical Transistors Stretchable organic electrochemical transistors (OECTs) provide a promising solution to develop the next‐generation soft brain probes for a more reliable brain‐machine interfacing. …”
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“…This work demonstrates the ability of the Ion-Sensitive Field-Effect Transistor (ISFET)-based immunosensor to detect antibodies against the human leukocyte antigen (HLA) and the major histocompatibility complex class-I-related chain A (MICA). …”
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“…In this work, an artificial electronic synaptic device based on gate-all-around InAs nanowire field-effect transistor is proposed and analyzed. The deposited oxide layer (In(2)O(3)) on the InAs nanowire surface serves as a charge trapping layer for information storage. …”
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“…The force-sensing transistor consists of 1D piezoelectric zinc oxide (ZnO) nanorods (NRs) as the gate control and multilayer tungsten diselenide (WSe(2)) as the transistor channel. …”
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“…The plasma pre-annealed multilayer stacked IZO TFTs showed better electrical properties with mobility enhancement from 2.45 to 7.81 cm(2)/Vs, but exhibited diminished on–off current ratio (I(on)/I(off)). The IZO thin-film transistor (TFT) prepared with femtosecond laser pre-annealing with low pulse energy generation (power of 3 W at 700 nm wavelength) for 100 s has also exhibited significantly improved electrical performance, the saturation mobility increased to 4.91 cm(2)/Vs, the I(on)/I(off) ratio was enhanced from 4.5 × 10(5) to 2.1 × 10(6), the threshold voltage improved from − 1.44 to − 0.25 V, and the subthreshold swing was reduced from 1.21 to 0.61 V/dec. …”
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“…We fabricated and characterized poly(3-hexylthiophene-2, 5-diyl) (P3HT)-based Organic thin-film transistors (OTFTs) containing an interfacial layer made from virgin Graphene Oxide (GO). …”
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“…We present a study on characteristics of operating region-dependent weight updates in a synaptic thin-film transistor (Syn-TFT) with an amorphous In–Ga–Zn–O (IGZO) channel layer. …”
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“…In this study, we propose the use of artificial synaptic transistors with coplanar-gate structures fabricated on paper substrates comprising biocompatible and low-cost potato-starch electrolyte and indium–gallium–zinc oxide (IGZO) channels. …”
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“…Substrate voltage (V(SUB)) effects on GaN-on-Si high electron mobility transistors (HEMTs) power application performance with superlattice transition layer structure was investigated. …”
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“…Transition metal dichalcogenide-based thin-film transistors (TFTs) have drawn intense research attention, but they suffer from high cost of materials and complex methods. …”
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“…Flexible electrolyte-gated graphene field effect transistors (Eg-GFETs) are widely developed as sensors because of fast response, versatility and low-cost. …”
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“…Herein, we first demonstrated the fabrication of a field‐effect transistor (FET) via a microelectromechanical system process after covalent functionalization on large‐scale graphene by introducing oligo(phenylene‐ethynylene)amine (OPE). …”
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“…Electrochemical transistors (ECTs) have shown broad applications in bioelectronics and neuromorphic devices due to their high transconductance, low working voltage, and versatile device design. …”
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“…A full understanding of the impact of charge trapping on the memory window (MW) of HfO(2)-based ferroelectric field effect transistors (FeFETs) will permit the design of program and erase protocols, which will guide the application of these devices and maximize their useful life. …”
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“…This study proposed a biocompatible polymeric organic material-based synaptic transistor gated with a biopolymer electrolyte. A polyvinyl alcohol (PVA):chitosan (CS) biopolymer blended electrolyte with high ionic conductivity was used as an electrical double layer (EDL). …”
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“…These artificial synaptic devices are based on memristors or transistors with the memristive layer or gate dielectric formed by natural organic materials. …”
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