Materias dentro de su búsqueda.
Mostrando 1,521 - 1,540 Resultados de 5,078 Para Buscar '"Transistor"', tiempo de consulta: 0.31s Limitar resultados
  1. 1521
    “…Antibody-immobilized AlGaN/GaN high electron mobility transistors (HEMTs) were used to detect a short peptide consisting of 20 amino acids. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    AlGaN/GaN high electron mobility transistors for protein–peptide binding affinity study
  2. 1522
    “…Bottom-gate top-contact (BGTC) organic thin transistors (OTFTs) were fabricated and characterized using the 2,6-anthracene derivatives as the semiconducting layer. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Developing and Comparing 2,6-Anthracene Derivatives: Optical, Electrochemical, Thermal, and Their Use in Organic Thin Film Transistors
  3. 1523
    “…Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
  4. 1524
    “…A new phototransistor named the “photodiode–oxide–semiconductor field effect transistor (PDOSFET)” was further proposed and verified in this work. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor
  5. 1525
    “…The sensor consists of a Si CMOS field-effect transistor with an integrated log-spiral THz antenna. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Passive Detection and Imaging of Human Body Radiation Using an Uncooled Field-Effect Transistor-Based THz Detector
  6. 1526
    “…Several challenging biological sensing concepts have been realized using electrolyte-gated reduced graphene oxide field effect transistors (rGO-FETs). In this work, we demonstrate the interest of rGO-FET for the sensing of human papillomavirus (HPV), one of the most common sexually transmitted viruses and a necessary factor for cervical carcinogenesis. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Reduced graphene oxide–based field effect transistors for the detection of E7 protein of human papillomavirus in saliva
  7. 1527
    por Oh, Jong Hyeok, Yu, Yun Seop
    Publicado 2020
    “…The optimal structure and process for the feedback field-effect transistor (FBFET) to operate as a logic device are investigated by using a technology computer-aided design mixed-mode simulator. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Investigation of Monolithic 3D Integrated Circuit Inverter with Feedback Field Effect Transistors Using TCAD Simulation
  8. 1528
    por Kim, Hee Jun, Jung, Joohye, Kim, Hyun Jae
    Publicado 2020
    “…This difference enabled self-patterning of the IZO for thin-film transistor (TFT) fabrication. Compared with previously reported self-patterning methods based on photosensitive activators, our self-patterned IZO TFTs based on photosensitive precursors displayed excellent electrical characteristics and stability. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Enhancement of electrical characteristics and stability of self-patterned In–Zn–O thin-film transistors based on photosensitive precursors
  9. 1529
    “…Simultaneously, the PBS/NBS stability of the resulting transistor is significantly improved under the same stress condition. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization
  10. 1530
    “…[Image: see text] We report a precise measurement of the sensor behavior of the field effect transistor (FET) formed with the MoS(2) channel when the channel part is exposed to Cl(2) gas. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    In Situ Study of Molecular Doping of Chlorine on MoS(2) Field Effect Transistor Device in Ultrahigh Vacuum Conditions
  11. 1531
    “…As a result, the pressure sensor shows an ultra-high sensitivity of ~3050 Pa(−1) and a response/recovery time of 258/114 ms in the very low-pressure range of <300 Pa as the fiber transistor was operated in the linear region (V(DS) = −0.1 V). …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Highly-Sensitive Textile Pressure Sensors Enabled by Suspended-Type All Carbon Nanotube Fiber Transistor Architecture
  12. 1532
    “…A novel quinoidal thienoisoindigo (TII)‐containing small molecule family with dicyanomethylene end‐capping units and various alkyl chains is synthesized as n‐type organic small molecules for solution‐processable organic field effect transistors (OFETs). The molecular structure of the 2‐hexyldecyl substituted derivative, TIIQ‐b16, is determined via single‐crystal X‐ray diffraction and shows that the TIIQ core is planar and exhibits molecular layers stacked in a “face‐to‐face” arrangement with short core intermolecular distances of 3.28 Å. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Thienoisoindigo (TII)‐Based Quinoidal Small Molecules for High‐Performance n‐Type Organic Field Effect Transistors
  13. 1533
    por Kim, Sung-Hun, Cho, Won-Ju
    Publicado 2021
    “…We proposed a synaptic transistor gated using a Ta(2)O(5) barrier-layered organic chitosan electric double layer (EDL) applicable to a micro-neural architecture system. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Lithography Processable Ta(2)O(5) Barrier-Layered Chitosan Electric Double Layer Synaptic Transistors
  14. 1534
    “…Here, it is shown that solution‐processed and direct‐written organic field‐effect transistors can be carefully designed and fabricated so to achieve a maximum transition frequency of 160 MHz, unlocking an operational range that was not available before for organics. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Organic Electronics Picks Up the Pace: Mask‐Less, Solution Processed Organic Transistors Operating at 160 MHz
  15. 1535
    “…The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor
  16. 1536
    “…The results showed that the process conditions have a substantial impact on the film densities and defect states, which in turn affect the performance of the final thin-film transistors (TFT) device. By optimizing the IGZO film deposition conditions, high-performance TFT was able to be demonstrated, with a saturation mobility of 8.4 cm [Formula: see text] /Vs, a threshold voltage of 0.9 V, and a subthreshold swing of 0.16 V/dec.…”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Study of the Correlation between the Amorphous Indium-Gallium-Zinc Oxide Film Quality and the Thin-Film Transistor Performance
  17. 1537
    “…In this work, we report radio-frequency single electron transistors using physically defined quantum dots in silicon-on-insulator. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Radio-frequency single electron transistors in physically defined silicon quantum dots with a sensitive phase response
  18. 1538
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Detection of Influenza Virus Using a SOI-Nanoribbon Chip, Based on an N-Type Field-Effect Transistor
  19. 1539
    “…In addition, a field-effect transistor (FET) was fabricated on the basis of multilayer MoS(2) prepared according to a new process, and the device exhibited a typical depleted-FET performance, with an on/off ratio of ~10(5) and a field-effect mobility of 24.26 cm(2)/Vs in the saturated region when V(G) is 10 V, which is generally consistent with the values for devices reported previously. …”
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Facile Exfoliation for High-Quality Molybdenum Disulfide Nanoflakes and Relevant Field-Effect Transistors Developed With Thermal Treatment
  20. 1540
    Enlace del recurso
    Enlace del recurso
    Enlace del recurso
    Online Artículo Texto
    Stretching the Equilibrium Limit of Sn in Ge(1–x)Sn(x) Nanowires: Implications for Field Effect Transistors
Herramientas de búsqueda: RSS